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Datasheet: HMC203 (Hittite Microwave Corporation)

Gaas Mmic Double-balanced Mixer, 14 - 23 Ghz

 

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Hittite Microwave Corporation
MICROWAVE CORPORATION
5 - 28
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
MIXERS - CHIP
5
HMC203
GaAs MMIC DOUBLE-BALANCED
MIXER, 14 - 23 GHz
v01.0801
General Description
Features
Functional Diagram
Conversion Loss: 10 dB
LO / RF Isolation: 38 dB
Passive: No DC Bias Required
Small Size: 0.87 mm x 1.48 mm
Electrical Specifi cations,
T
A
= +25 C, LO Drive = +15 dBm
Typical Applications
The HMC203 is ideal for:
18 GHz TVRO
23 GHz Telecom Radios
Military Systems
The HMC203 chip is a miniature double-balanced
mixer which can be used as an upconverter or
downconverter. Excellent isolations are provided
by on-chip baluns, which require no external com-
ponents and no DC bias. The mixer chip can
be integrated directly into MMIC hybrid applica-
tions. Unless otherwise stated, all data was mea-
sured with the mixer mounted in a MMIC test
fi xture. The MMIC was connected to thinfi lm 50
ohm transmission lines with 1 mil diameter wire-
bonds of <10 mils in length.
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range, RF & LO
14 - 23
15 - 21
GHz
Frequency Range, IF
DC - 2
DC -2
GHz
Conversion Loss
10
12
8.5
10
dB
Noise Figure (SSB)
10
12
8.5
10
dB
LO to RF Isolation
30
38
30
38
dB
LO to IF Isolation
35
45
35
45
dB
RF to IF Isolation
12
17
12
17
dB
IP3 (Input)
18
18
dBm
IP2 (Input)
40
40
dBm
1 dB Gain Compression (Input)
7
7
dBm
MICROWAVE CORPORATION
5 - 29
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
MIXERS - CHIP
5
-20
-15
-10
-5
0
13
15
17
19
21
23
25
CONVERSION LOSS (dB)
FREQUENCY (GHz)
+10 dBm
+8 dBm
+15 dBm
+12 dBm
-70
-60
-50
-40
-30
-20
-10
0
13
15
17
19
21
23
25
ISOLATION (dB)
FREQUENCY (GHz)
RF/IF
LO/RF
LO/IF
Conversion Loss vs LO Drive
Isolation, LO = +15 dBm
-20
-15
-10
-5
0
13
15
17
19
21
23
25
CONVERSION LOSS (dB)
FREQUENCY (GHz)
+10 dBm
+8 dBm
+15 dBm
+12 dBm
Conversion Loss @ +85 C vs. LO Drive
v01.0801
-20
-15
-10
-5
0
13
15
17
19
21
23
25
CONVERSION LOSS (dB)
FREQUENCY (GHz)
+10 dBm
+8 dBm
+15 dBm
+12 dBm
Conversion Loss @ -55 C vs LO Drive
IF Bandwidth LO = 18 GHz @ +15 dBm
RF Coplanar Probe Data LO = +12 dBm
-25
-20
-15
-10
-5
0
0
2
4
6
CONVERSION LOSS (dB)
IF FREQUENCY (GHz)
+8 dBm
+10 dBm
+12 dBm
+15 dBm
-60
-50
-40
-30
-20
-10
0
10
15
20
25
30
35
40
CONVERSION LOSS AND ISOLATION (dB)
FREQUENCY (GHz)
CONVERSION LOSS
LO/RF ISO
RF/IF ISO
LO/IF ISO
GaAs MMIC DOUBLE-BALANCED
MIXER, 14 - 23 GHz
HMC203
MICROWAVE CORPORATION
5 - 30
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
MIXERS - CHIP
5
Outline Drawing
Absolute Maximum Ratings
v01.0801
HMC203
GaAs MMIC DOUBLE-BALANCED
MIXER, 14 - 23 GHz
RF / IF Input
+13 dBm
LO Drive
+27 dBm
Storage Temperature
-65 to +150 C
Operating Temperature
-55 to +85 C
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. DIE THICKNESS IS .004".
3. BOND PADS ARE .004" SQUARE.
4. BOND PAD SPACING CENTER TO CENTER IS .006".
5. BACKSIDE METALLIZATION: GOLD.
6. BOND PAD METALLIZATION: GOLD.
7. BACKSIDE METAL IS GROUND.
8. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
MICROWAVE CORPORATION
5 - 31
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
MIXERS - CHIP
5
v01.0801
HMC203
GaAs MMIC DOUBLE-BALANCED
MIXER, 14 - 23 GHz
Handling Precautions
Follow these precautions to avoid permanent damage.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > 250V ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize
inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the
chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fi ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting
surface should be clean and fl at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 C and a tool temperature
of 265 C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 C. DO NOT expose the chip
to a temperature greater than 320 C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for
attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fi llet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule.
Wire Bonding
RF bonds made with 0.003" x 0.0005" ribbon are recommended. These bonds should be thermosonically bonded with a force of 40-
60 grams. DC bonds of 0.001" (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with
a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 C. A
minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than
12 mils (0.31 mm).
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