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Datasheet: HMC194MS8 (Hittite Microwave Corporation)

Gaas Mmic Spdt Switch Dc - 3 Ghz

 

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Hittite Microwave Corporation
MICROWAVE CORPORATION
14 - 42
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
SWITCHES - SMT
14
HMC194MS8
GaAs MMIC SPDT SWITCH
DC - 3 GHz
v04.0903
General Description
Features
Functional Diagram
Ultra Small Package: MSOP8
High Isolation: 50 dB
Positive Control: 0/+3V to 0/+7V
Electrical Specifi cations,
T
A
= +25 C, Vctl = 0/+5 Vdc, 50 Ohm System
Typical Applications
The HMC194MS8 is ideal for:
Cellular/PCS Base Stations
Portable Wireless
MMDS & WirelessLAN
The HMC194MS8 is a low-cost SPDT switch in
an 8-lead MSOP package for use in applica-
tions which require high isolation between two
RF paths. The device can control signals from
DC to 3 GHz and has been optimized to provide
extremely high isolation with minimal insertion
loss in medium and low power applications. On
chip circuitry allows positive voltage control oper-
ation at very low DC currents with control inputs
compatible with CMOS and most TTL logic fam-
ilies. RF1 and RF2 are refl ective opens when
"OFF".
Parameter
Frequency
Min.
Typ.
Max.
Units
Insertion Loss
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.0 GHz
0.7
0.7
0.8
0.9
0.9
0.9
1.1
1.4
dB
dB
dB
dB
Isolation
RF1 / RF2
RF1 / RF2
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.0 GHz
45 / 47
39 / 43
31
24
49 / 51
42 / 46
35
28
dB
dB
dB
dB
Return Loss
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.0 GHz
18
14
13
13
21
17
17
17
dB
dB
dB
dB
Input Power for 1 dB Compression
0/+5V Control
0.5 - 1.0 GHz
0.5 - 3.0 GHz
19
17
23
21
dBm
dBm
Input Third Order Intercept
(Two-tone Input Power = +7 dBm Each Tone)
0/+5V Control
0.5 - 1.0 GHz
0.5 - 3.0 GHz
39
37
43
41
dBm
dBm
Switching Characteristics
DC - 3.0 GHz
tRISE, tFALL (10/90% RF)
tON , tOFF (50% CTL to 10/90% RF)
10
24
ns
ns
MICROWAVE CORPORATION
14 - 43
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
14
SWITCHES - SMT
-3
-2.5
-2
-1.5
-1
-0.5
0
0
1
2
3
INSERTION LOSS (dB)
FREQUENCY (GHz)
GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz
HMC194MS8
Insertion Loss
v04.0903
Isolation
Return Loss
-70
-60
-50
-40
-30
-20
-10
0
0
1
2
3
ISOLATION (dB)
FREQUENCY (GHz)
RF1
RF2
-40
-30
-20
-10
0
0
1
2
3
RETURN LOSS (dB)
FREQUENCY (GHz)
S22
S11
GaAs MMIC SPDT SWITCH
DC - 3 GHz
10
15
20
25
30
4
5
6
7
8
INPUT POWER FOR 0.1 & 1dB COMPRESSION
Control Input (Vdc)
P1 dB at 900 MHz
P1 dB at 1900 MHz
P0.1 dB at 1900 MHz
P0.1 dB at 900 MHz
40
45
50
55
60
4
5
6
7
8
INPUT THIRD ORDER INTERCEPT (dBm)
Control Input (Vdc)
1900 MHz
900 MHz
Input 0.1 and 1.0 dB
Compression vs. Control Voltage
Input Third Order
Intercept Point vs. Control Voltage
MICROWAVE CORPORATION
14 - 44
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
SWITCHES - SMT
14
HMC194MS8
Compression vs. Control Voltage
Caution: Do not operate in 1dB compression at power levels
above +25 dBm and do not "hot switch" power levels greater
than +18 dBm (Control = 0/+5Vdc).
DC blocks are required at ports RFC, RF1 and RF2.
v04.0903
Distortion vs. Control Voltage
GaAs MMIC SPDT SWITCH
DC - 3 GHz
Truth Table
*Control Input Voltage Tolerances are 0.2 Vdc.
Control Input*
Control Current
Signal Path State
A
(Vdc)
B
(Vdc)
Ia
(uA)
Ib
(uA)
RF to
RF1
RF to
RF2
0
+3
-23
+23
ON
OFF
+3
0
+23
-23
OFF
ON
0
+5
-95
+95
ON
OFF
+5
0
+95
-95
OFF
ON
0
+7
-190
+190
ON
OFF
+7
0
+190
-190
OFF
ON
Control Input
Third Order Intercept (dBm)
+7 dBm Each Tone
(Vdc)
900 MHz
1900 MHz
+5
43
41
+7
50
48
Carrier at 900 MHz
Carrier at 1900 MHz
Bias
Vdd
Input Power
for 0.1 dB
Compression
Input Power
for 1.0 dB
Compression
Input Power
for 0.1 dB
Compression
Input Power
for 1.0 dB
Compression
(Vdc)
(dBm)
(dBm)
(dBm)
(dBm)
+4
19
22
18
20
+5
21
23
19
21
+6
21
24
20
22
+7
22
25
21
23
MICROWAVE CORPORATION
14 - 45
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
14
SWITCHES - SMT
HMC194MS8
v04.0903
Absolute Maximum Ratings
Outline Drawing
GaAs MMIC SPDT SWITCH
DC - 3 GHz
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Control Voltage Range (A & B)
-0.2 to +7.5 Vdc
Storage Temperature
-65 to +150 C
Operating Temperature
-40 to +85 C
MICROWAVE CORPORATION
14 - 46
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
SWITCHES - SMT
14
HMC194MS8
v04.0903
Typical Application Circuit
See "Design Techniques Enhance Isolation in Switch Assemblies"
for HMC194MS8 Applications, "Application Notes" Section.
GaAs MMIC SPDT SWITCH
DC - 3 GHz
Notes:
1. Set logic gate and switch Vdd = +3V to +5V and use HCT series logic to provide a TTL driver interface.
2. Control inputs A/B can be driven directly with CMOS logic (HC) with Vdd of 3 to 7 Volts applied to the CMOS
logic
gates.
3. DC Blocking capacitors are required for each RF port as shown. Capacitor value determines lowest frequency
of
operation.
4. Highest RF signal power capability is achieved with Control set to 0/+7V.
MICROWAVE CORPORATION
14 - 47
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
14
SWITCHES - SMT
HMC194MS8
v04.0903
Evaluation Circuit Board
GaAs MMIC SPDT SWITCH
DC - 3 GHz
The circuit board used in the fi
nal application
should be generated with proper RF circuit design
techniques. Signal lines at the RF port should
have 50 ohm impedance and the package ground
leads should be connected directly to the ground
plane similar to that shown above. The evalua-
tion circuit board shown above is available from
Hittite Microwave Corporation upon request.
List of Material
Item
Description
J1 - J3
PC Mount SMA RF Connector
J4 - J6
DC Pin
C1 - C3
100 pF capacitor, 0402 Pkg.
R1, R2
100
resistor, 0402 Pkg.
U1
HMC194MS8 SPDT Switch
PCB*
107821 Evaluation PCB
* Circuit Board Material: Rogers 4350
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