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Datasheet: HMC174MS8 (Hittite Microwave Corporation)

Gaas Mmic T/r Switch Dc - 3 Ghz

 

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Hittite Microwave Corporation
MICROWAVE CORPORATION
14 - 20
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
SWITCHES - SMT
14
HMC174MS8
GaAs MMIC T/R SWITCH
DC - 3 GHz
v01.0101
General Description
Features
Functional Diagram
Ultra Small Package: MSOP8
High Third Order Intercept: +60 dBm
Single Positive Supply: +3 to +10V
High RF power Capabilty
Electrical Specifi cations,
T
A
= +25 C, Vdd = +5 Vdc, 50 Ohm System
Typical Applications
The HMC174MS8 is ideal for:
ISM Applications
PCMCIA Wireless Cards
Portable Wireless
The HMC174MS8 is a low-cost SPDT switch in
an 8-lead MSOP package for use in transmit-
receive applications which require very low dis-
tortion at high signal power levels. The device
can control signals from DC to 3.0 GHz and is
especially suited for 900 MHz, 1.8 - 2.2 GHz, and
2.4 GHz ISM applications with only 0.5 dB loss.
The design provides exceptional intermodulation
performance; providing a +60 dBm third order
intercept at 8 Volt bias. RF1 and RF2 are refl ec-
tive shorts when "OFF". On-chip circuitry allows
single positive supply operation at very low DC
current with control inputs compatible with CMOS
and most TTL logic families.
Parameter
Frequency
Min.
Typ.
Max.
Units
Insertion Loss
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.0 GHz
0.5
0.5
0.7
1.4
0.7
0.8
1.0
1.8
dB
dB
dB
dB
Isolation
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.0 GHz
22
20
17
13
25
24
21
17
dB
dB
dB
dB
Return Loss
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.0 GHz
20
16
13
9
28
21
17
11
dB
dB
dB
dB
Input Power for 1dB Compression
0/8V Control
0.5 - 1.0 GHz
0.5 - 3.0 GHz
35
34
39
38
dBm
dBm
Input Third Order Intercept
0/8V Control
0.5 - 1.0 GHz
0.5 - 3.0 GHz
55
55
60
60
dBm
dBm
Switching Characteristics
DC - 3.0 GHz
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
10
24
ns
ns
MICROWAVE CORPORATION
14 - 21
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
14
SWITCHES - SMT
-5
-4
-3
-2
-1
0
0
1
2
3
INSERTION LOSS (dB)
FREQUENCY (GHz)
GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz
HMC174MS8
Insertion Loss
v01.0101
Isolation
Return Loss
-40
-30
-20
-10
0
0
1
2
3
ISOLATION (dB)
FREQUENCY (GHz)
-40
-30
-20
-10
0
0
1
2
3
INPUT RETURN LOSS (dB)
FREQUENCY (GHz)
GaAs MMIC T/R SWITCH
DC - 3 GHz
25
30
35
40
45
COMPRESSION (dBm)
2
4
6
8
10
12
BIAS (Volts)
1dB at 900MHz
0.1dB at 1900MHz
0.1dB at 900MHz
1db at 1900MHz
Input 0.1 and 1.0 dB
Compression vs. Bias Voltage
Input Third Order
Intercept vs. Bias Voltage
35
40
45
50
55
60
65
IP3 (dBm)
2
4
6
8
10
12
BIAS (Volts)
900MHz
1900MHz
MICROWAVE CORPORATION
14 - 22
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
SWITCHES - SMT
14
HMC174MS8
v01.0101
Distortion vs. Bias Voltage
Compression vs. Bias Voltages
Caution: Do not operate in 1dB compression at power
levels above +35dBm and do not `hot switch' power levels
greater than +23dBm (V
dd
= +5Vdc).
GaAs MMIC T/R SWITCH
DC - 3 GHz
Truth Table
*Control Input Voltage Tolerances are 0.2 Vdc
Carrier at 900 MHz
Carrier at 1900 MHz
Bias
Vdd
Input Power
for 0.1 dB
Compression
Input Power
for 1.0 dB
Compression
Input Power
for 0.1 dB
Compression
Input Power
for 1.0 dB
Compression
(Volts)
(dBm)
(dBm)
(dBm)
(dBm)
3
27
31
26
30
4
30
34
29
33
5
32
36
31
35
8
36
39
35
38
10
37
40
36
39
1 Watt Carrier at 900 MHz
1 Watt Carrier at 1900 MHz
Bias
Vdd
Third
Order
Intercept
Second
Order
Intercept
Second
Harmonic
Third
Order
Intercept
Second
Order
Intercept
Second
Harmonic
(Volts)
(dBm)
(dBm)
(dBc)
(dBm)
(dBm)
(dBc)
3
43
71
45
42
78
55
4
48
85
55
46
88
65
5
53
90
56
51
87
58
8
60
90
58
60
90
59
10
60
90
59
60
90
60
Bias
Control Input*
Bias
Current
Control
Current
Control
Current
Signal Path State
Vdd
(Vdc)
A
(Vdc)
B
(Vdc)
Idd
(uA)
Ia
(uA)
Ib
(uA)
RF to
RF1
RF to
RF2
3
0
0
30
-15
-15
OFF
OFF
3
0
Vdd
25
-25
0
ON
OFF
3
Vdd
0
25
0
-25
OFF
ON
5
0
0
110
-55
-55
OFF
OFF
5
0
Vdd
115
-100
-15
ON
OFF
5
Vdd
0
115
-15
-100
OFF
ON
10
0
0
380
-190
-190
OFF
OFF
10
0
Vdd
495
-275
-220
ON
OFF
10
Vdd
0
495
-220
-275
OFF
ON
5
-Vdd
Vdd
600
-600
225
ON
OFF
5
Vdd
-Vdd
600
225
-600
OFF
ON
MICROWAVE CORPORATION
14 - 23
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
14
SWITCHES - SMT
HMC174MS8
v01.0101
Outline Drawing
Absolute Maximum Ratings
GaAs MMIC T/R SWITCH
DC - 3 GHz
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Bias Voltage Range (Vdd)
-0.2 to +12 Vdc
Control Voltage Range (A & B)
-0.2 to +Vdd Vdc
Storage Temperature
-65 to +150 C
Operating Temperature
-40 to +85 C
MICROWAVE CORPORATION
14 - 24
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
SWITCHES - SMT
14
HMC174MS8
Notes:
1. Set logic gate and switch Vdd = +3V to +5V and use HCT series logic to provide a TTL driver interface.
2. Control inputs A/B can be driven directly with CMOS logic (HC) with Vdd of 3 to 8 Volts applied to the CMOS
logic gates and to pin 4 of the RF switch.
3. DC Blocking capacitors are required for each RF port as shown. Capacitor value determines
lowest frequency of operation.
4. Highest RF signal power capability is achieved with V set to +10V. The switch will operate properly (but at lower
RF power capability) at bias voltages down to +3V.
v01.0101
Typical Application Circuit
GaAs MMIC T/R SWITCH
DC - 3 GHz
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