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Datasheet: HMC154S8 (Hittite Microwave Corporation)

Gaas Mmic Smt Low Distortion T/r Switch, Dc - 2.5 Ghz

 

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Hittite Microwave Corporation
MICROWAVE CORPORATION
14 - 2
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
SWITCHES - SMT
14
HMC154S8
GaAs MMIC SMT LOW DISTORTION
T/R SWITCH, DC - 2.5 GHz
v01.0701
General Description
Features
Functional Diagram
High Third Order Intercept: +60 dBm
Single Positive Supply: +3 to +10V
High RF Power Capability
TTL/CMOS Control
Electrical Specifi cations,
T
A
= +25 C, Vdd = +5 Vdc, 50 Ohm System
Typical Applications
The HMC154S8 is ideal for:
MMDS & WirelessLAN
Basestation Infrastructure
Portable Wireless
The HMC154S8 is a low-cost SPDT switch in an
8-lead SOIC package for use in transmit-receive
applications which require very low distortion at
high signal power levels. The device can control
signals from DC to 2.5 GHz and is especially
suited for 900 MHz and 1.8 - 2.2 GHz applica-
tions. The design provides exceptional inter-
modulation performance; providing a +60dBm
third order intercept at 8 Volt bias. RF1 and RF2
are refl ective shorts when "Off". On-chip circuitry
allows single positive supply operation at very low
DC current with control inputs compatible with
CMOS and most TTL logic families.
Parameter
Frequency
Min.
Typ.
Max.
Units
Insertion Loss
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
0.5
0.7
1.0
0.7
0.9
1.3
dB
dB
dB
Isolation
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
22
19
15
25
22
18
dB
dB
dB
Return Loss
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
20
14
10
30
18
13
dB
dB
dB
Input Power for 1 dB Compression
0/8V Control
0.5 - 1.0 GHz
0.5 - 2.0 GHz
35
34
39
38
dBm
dBm
Input Third Order Intercept
0/8V Control
0.5 - 1.0 GHz
0.5 - 2.0 GHz
55
54
60
60
dBm
dBm
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
DC - 2.5 GHz
10
24
ns
ns
MICROWAVE CORPORATION
14 - 3
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
14
SWITCHES - SMT
-5
-4
-3
-2
-1
0
INSERTION LOSS (dB)
0
1
2
3
4
FREQUENCY (GHz)
-40
-30
-20
-10
0
ISOLATION (dB)
0
1
2
3
4
FREQUENCY (GHz)
-40
-30
-20
-10
0
RETURN LOSS (dB)
0
1
2
3
4
FREQUENCY (GHz)
HMC154S8
Return Loss
Insertion Loss
Isolation
v01.0701
GaAs MMIC SMT LOW DISTORTION
T/R SWITCH, DC - 2.5 GHz
25
30
35
40
45
COMPRESSION (dBm)
2
4
6
8
10
12
BIAS (Volts)
1dB at 900MHz
0.1dB at 1900MHz
0.1dB at 900MHz
1db at 1900MHz
35
40
45
50
55
60
65
IP3 (dBm)
2
4
6
8
10
12
BIAS (Volts)
900MHz
1900MHz
Input Power for 0.1 and 1.0 dB
Compression vs. Bias Voltage
Input Third Order
Intercept vs. Bias Voltage
MICROWAVE CORPORATION
14 - 4
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
SWITCHES - SMT
14
HMC154S8
Compression vs. Bias Voltage
Caution: Do not operate in
1dB compression at power levels
above +35dBm and do not "hot
switch" power levels greater than
+23dBm (Vdd = +5V).
v01.0701
Distortion vs. Bias Voltage
GaAs MMIC SMT LOW DISTORTION
T/R SWITCH, DC - 2.5 GHz
Truth Table
*Control Input Voltage Tolerances are 0.2 Vdc.
Carrier at 900 MHz
Carrier at 1900 MHz
Bias
Vdd
Input Power
for 0.1 dB
Compression
Input Power
for 1.0 dB
Compression
Input Power for
0.1 dB
Compression
Input Power
for 1.0 dB
Compression
(Volts)
(dBm)
(dBm)
(dBm)
(dBm)
3
27
31
26
30
4
30
34
29
33
5
32
36
31
35
8
36
39
35
38
10
37
40
36
39
1 Watt Carrier at 900 MHz
1 Watt Carrier at 1900 MHz
Bias
Vdd
Third
Order
Intercept
Second
Order
Intercept
Second
Harmonic
Third
Order
Intercept
Second
Order
Intercept
Second
Harmonic
(Volts)
(dBm)
(dBm)
(dBc)
(dBm)
(dBm)
(dBc)
3
43
71
45
42
78
55
4
48
85
55
46
88
65
5
53
90
56
51
87
58
8
60
90
58
60
90
59
10
60
90
59
60
90
60
Bias
Control Input*
Bias
Current
Control
Current
Control
Current
Signal Path State
Vdd
(Vdc)
A
(Vdc)
B
(Vdc)
Idd
(uA)
Ia
(uA)
Ib
(uA)
RF to
RF1
RF to
RF2
3
0
0
30
-15
-15
OFF
OFF
3
0
Vdd
25
-25
0
ON
OFF
3
Vdd
0
25
0
-25
OFF
ON
5
0
0
110
-55
-55
OFF
OFF
5
0
Vdd
115
-100
-15
ON
OFF
5
Vdd
0
115
-15
-100
OFF
ON
10
0
0
380
-190
-190
OFF
OFF
10
0
Vdd
495
-275
-220
ON
OFF
10
Vdd
0
495
-220
-275
OFF
ON
5
-Vdd
Vdd
600
-600
225
ON
OFF
5
Vdd
-Vdd
600
225
-600
OFF
ON
MICROWAVE CORPORATION
14 - 5
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
14
SWITCHES - SMT
HMC154S8
v01.0701
Absolute Maximum Ratings
Outline Drawing
GaAs MMIC SMT LOW DISTORTION
T/R SWITCH, DC - 2.5 GHz
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Bias Voltage Range (Vdd)
-0.2 to +12 Vdc
Control Voltage Range (A & B)
-0.2 to Vdd Vdc
Storage Temperature
-65 to +150 C
Operating Temperature
-40 to +85 C
MICROWAVE CORPORATION
14 - 6
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
SWITCHES - SMT
14
HMC154S8
Notes:
1. Set logic gate and switch Vdd = +3V to +5V and use HCT series logic to provide a TTL driver interface.
2. Control inputs A/B can be driven directly with CMOS logic (HC) with Vdd of 3 to 8 Volts applied to the CMOS
logic gates and to pin 4 of the RF switch.
3. DC Blocking capacitors are required for each RF port as shown. Capacitor value determines
lowest frequency of operation.
4. Highest RF signal power capability is achieved with V set to +10V. The switch will operate properly (but at lower
RF power capability) at bias voltages down to +3V.
v01.0701
Typical Application Circuit
GaAs MMIC SMT LOW DISTORTION
T/R SWITCH, DC - 2.5 GHz
MICROWAVE CORPORATION
14 - 7
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
14
SWITCHES - SMT
HMC154S8
v01.0701
Evaluation Circuit Board
GaAs MMIC SMT LOW DISTORTION
T/R SWITCH, DC - 2.5 GHz
The circuit board used in the fi nal application should
be generated with proper RF circuit design tech-
niques. Signal lines at the RF port should have 50
ohm impedance and the package ground leads and
package bottom should be connected directly to the
ground plane similar to that shown above. The evalu-
ation circuit board shown above is available from Hit-
tite Microwave Corporation upon request.
List of Material
Item
Description
J1 - J3
PC Mount SMA RF Connector
J4 - J7
DC Pin
C1 - C3
330 pF Capacitor, 0402 Pkg.
U1
HMC154S8 SPDT Switch
PCB*
101786 Evaluation PCB
* Circuit Board Material: Rogers 4350
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