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Datasheet: HMC136 (Hittite Microwave Corporation)

Gaas Mmic Bi-phase Modulator, 4 - 8 Ghz

 

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Hittite Microwave Corporation
MICROWAVE CORPORATION
6 - 6
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
MODULA
T
ORS - CHIP
6
HMC136
GaAs MMIC BI-PHASE
MODULATOR, 4 - 8 GHz

v01.0300
General Description
Features
Functional Diagram
Chip Integrates Directly into MIC Designs
30 dB of Carrier Suppression
Direct Modulation in the 4 - 8 GHz Band
Functions also as a Phase Detector
Electrical Specifi cations,
T
A
= +25 C, 5 mA Bias Current
Typical Applications
The HMC136 is suitable for:
Wireless Local Loop
LMDS & VSAT
Pt. to Pt. Radios
Test Equipment
The HMC136 Bi-Phase Modulator is designed to
phase-modulate an RF signal into reference and 180
degree states. Device input is at the RF port and output
is at the LO port. The polarity of the bias current at the
control port (IF port) defi nes the phase states. Excellent
amplitude and phase balance provided by closely
matched monolithic balun and diode circuits delivers
30 dB of carrier suppression in a tiny monolithic chip.
The device also functions as a demodulator or
phase comparator. As a demodulator, data emerges
at the control port when a modulated signal at the
RF port is compared to a reference signal at the
LO port. As a phase comparator, the phase angle
between two signals applied to the RF and LO ports
is represented by an analog voltage at the control port.
Except for carrier suppression, the data presented
here was measured under static conditions in which
a DC bias current (nominally 5 mA) is applied to the
control port.
Parameter
Min.
Typ.
Max.
Units
Frequency Band
4 - 8
GHz
Insertion Loss
8
10
dB
Return Loss, RF and LO Ports
2.5
3.0
dB
Amplitude Balance
0.1
0.5
dB
Phase Balance
4.0
6.0
deg
Carrier Supression (When driven with a 1 MHz square wave, 1.4 Vp-p)
25
30
dBc
Input Power for 1 dB Compression
4
8
dBm
Third Order Intercept, Input
10
15
dBm
Second Order Intercept, Input
25
35
dBm
Bias Current (Bias current forward biases internal Schottky diodes providing approximately 0.6 V
at the control port).
2
5
10
mA
MICROWAVE CORPORATION
6 - 7
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
6
MODULA
T
ORS - CHIP
-20
-15
-10
-5
0
INSERTION LOSS (dB)
3
4
5
6
7
8
9
FREQUENCY (GHz)
-2
-1
0
1
2
AMPLITUDE BALANCE (dB)
3
4
5
6
7
8
9
FREQUENCY (GHz)
-10
-8
-6
-4
-2
0
2
4
6
8
10
PHASE BALANCE (Deg)
3
4
5
6
7
8
9
FREQUENCY (GHz)
0
10
20
30
40
50
CARRIER

SUPPRESSION

(dB
c
)
4
5
6
7
8
CARRIER FREQUENCY (GHz)
-20
-15
-10
-5
0
RETURN LOSS (dB)
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz
HMC136
Return Loss
GaAs MMIC BI-PHASE
MODULATOR, 4 - 8 GHz

v01.0300
Insertion Loss
Amplitude Balance
Phase Balance
Carrier Suppression *
* (For 1.4 Vp-p Square Wave Modulation at 1 MHz)
MICROWAVE CORPORATION
6 - 8
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
MODULA
T
ORS - CHIP
6
Compression vs Frequency *
Compression vs Bias at 6 GHz
HMC136
GaAs MMIC BI-PHASE
MODULATOR, 4 - 8 GHz

v01.0300
Third Order Intercept vs Frequency *
Third Order Intercept vs Bias at 6 GHz
* (For 5 mA Bias Current)
0
2
4
6
8
10
12
INPUT P1dB (dBm)
4
5
6
7
8
CARRIER FREQUENCY (GHz)
0
2
4
6
8
10
12
14
INPUT P1dB (dBm)
0
1
2
3
4
5
6
7
8
9
10
BIAS CURRENT (mA)
INPUT IP3 (dBm)
CARRIER FREQUENCY (GHz)
0
5
10
15
20
25
INPUT IP3 (dBm)
0
1
2
3
4
5
6
7
8
9
10
BIAS CURRENT (mA)
MICROWAVE CORPORATION
6 - 9
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
6
MODULA
T
ORS - CHIP
HMC136
GaAs MMIC BI-PHASE
MODULATOR, 4 - 8 GHz

v01.0300
Outline Drawing
Suggested TTL Driver for a Bi-Phase Modulator
Notes
1.
V
A
Alternates Between
+ 2.4 V
dc
I
A
= 2.4 - 0.6 = 5 mA
360
Ohm
2. HCT04 and HC04 are QMOS HEX
Inverters.
*R
1
=300 to 620 2% Select R
1
To
Supply 3 to 6 mA to the IF Port.
2.2K
TTL
VCC
GND
GND
VCC
HCT04
HC04
.01 uF
.01 uF
-2.5 Vdc
+2.5 Vdc
+5 Vdc
*R 1
MODULATOR
I, Q PORTS
HITTITE
MODULATOR
VA
IA
V Z = 2V
0.6V
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. TYPICAL BOND PAD IS .004" SQUARE.
3. BOND PAD SPACING IS .006" CENTER
TO
CENTER.
4. BACKSIDE METALIZATION: GOLD.
5. BACKSIDE METAL IS GROUND.
6. BOND PAD METALIZATION: GOLD.
7. CONNECTION NOT REQUIRED FOR
UNLABELED BOND PADS.
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