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Datasheet: HMC135 (Hittite Microwave Corporation)

Gaas Mmic Bi-phase Modulator, 1.8 - 5.2 Ghz

 

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Hittite Microwave Corporation
MICROWAVE CORPORATION
6 - 2
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
MODULA
T
ORS - CHIP
6
HMC135
GaAs MMIC BI-PHASE
MODULATOR, 1.8 - 5.2 GHz

v02.0304
General Description
Features
Functional Diagram
Chip Integrates Directly into MIC Designs
30 dB of Carrier Suppression
Direct Modulation in the 1.8 - 5.2 GHz Band
Functions also as a Phase Detector
Electrical Specifi cations,
T
A
= +25 C, 5 mA Bias Current
Typical Applications
The HMC135 is suitable for:
Wireless Local Loop
LMDS & VSAT
Pt. to Pt. Radios
Test Equipment
The HMC135 Bi-Phase Modulator is designed to
phase-modulate an RF signal into reference and 180
degree states. Device input is at the RF port and output
is at the LO port. The polarity of the bias current at the
control port (IF port) defi nes the phase states. Excel-
lent amplitude and phase balance provided by closely
matched monolithic balun and diode circuits delivers
30 dB of carrier suppression in a tiny monolithic chip.
The device also functions as a demodulator or phase
comparator. As a demodulator, data emerges at the
control port when a modulated signal at the RF port
is compared to a reference signal at the LO port. As a
phase comparator, the phase angle between two sig-
nals applied to the RF and LO ports is represented by
an analog voltage at the control port. Except for carrier
suppression, the data presented here was measured
under static conditions in which a DC bias current
(nominally 5 mA) is applied to the control port.
Parameter
Min.
Typ.
Max.
Units
Frequency Band
1.8 - 5.2
GHz
Insertion Loss
9
11
dB
Return Loss, RF and LO Ports
2.5
3.0
dB
Amplitude Balance
0.2
0.5
dB
Phase Balance
2.5
5.0
Deg
Carrier Suppression (When driven with a 1 MHz square wave, 1.4 Vp-p)
25
30
dBc
Input Power for 1 dB Compression
0
8
dBm
Third Order Intercept, Input
5
10
dBm
Second Order Intercept, Input
15
30
dBm
Bias Current (Bias current forward biases internal Schottky diodes providing approximately 0.6 V
at the control port).
2
5
10
mA
MICROWAVE CORPORATION
6 - 3
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
6
MODULA
T
ORS - CHIP
FREQUENCY (GHz)
6
5
4
3
2
1
INSERTION LOSS (dB)
0
-5
-10
-15
-20
-2
-1
0
1
2
AMPLITUDE BALANCE (dB)
1
2
3
4
5
6
FREQUENCY (GHz)
-8
-10
-6
-4
-2
0
2
4
6
8
10
PHASE BALANCE (Deg)
1
2
3
4
5
6
FREQUENCY (GHz)
-20
-15
-10
-5
0
RETURN LOSS (dB)
0
1
2
3
4
5
6
7
8
FREQUENCY (GHz)
GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz
HMC135
Return Loss
GaAs MMIC BI-PHASE
MODULATOR, 1.8 - 5.2 GHz

v02.0304
Insertion Loss
Amplitude Balance
Phase Balance
Carrier Suppression *
* (For 1.4 Vp-p Square Wave Modulation at 1 MHz)
0
10
20
30
40
50
CARRIER SUPPRESSION (dBc)
2
3
4
5
6
CARRIER FREQUENCY (GHz)
MICROWAVE CORPORATION
6 - 4
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
MODULA
T
ORS - CHIP
6
Compression vs Frequency *
Compression vs Bias at 4 GHz
HMC135
GaAs MMIC BI-PHASE
MODULATOR, 1.8 - 5.2 GHz

v02.0304
Third Order Intercept vs Frequency *
Third Order Intercept vs Bias at 4 GHz
* (For 5 mA Bias Current)
0
2
4
6
8
10
12
INPUT P1dB (dBm)
2
3
4
5
6
CARRIER FREQUENCY (GHz)
0
2
4
6
8
10
12
14
INPUT P1dB (dBm)
BIAS CURRENT (mA)
0
1
2
3
4
5
6
7
8
9
10
0
5
10
15
20
25
INPUT IP3 (dBm)
CARRIER FREQUENCY (GHz)
2
3
4
5
6
0
5
10
15
20
25
INPUT IP3 (dBm)
0
1
2
3
4
5
6
7
8
9
10
BIAS CURRENT (mA)
MICROWAVE CORPORATION
6 - 5
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
6
MODULA
T
ORS - CHIP
HMC135
GaAs MMIC BI-PHASE
MODULATOR, 1.8 - 5.2 GHz

v02.0304
Outline Drawing
Suggested TTL Driver for a Bi-Phase Modulator
Notes
1.
V
A
Alternates Between
+ 2.4 V
dc
I
A
= 2.4 - 0.6 = 5 mA
360
Ohm
2. HCT04 and HC04 are QMOS HEX
Inverters.
*R
1
=300 to 620 2% Select R
1
To
Supply 3 to 6 mA to the IF Port.
2.2K
TTL
VCC
GND
GND
VCC
HCT04
HC04
.01 uF
.01 uF
-2.5 Vdc
+2.5 Vdc
+5 Vdc
*R 1
MODULATOR
I, Q PORTS
HITTITE
MODULATOR
VA
IA
V Z = 2V
0.6V
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. TYPICAL BOND PAD IS .004" SQUARE.
3. BOND PAD SPACING IS .006" CENTER
TO
CENTER.
4. BACKSIDE METALIZATION: GOLD.
5. BACKSIDE METAL IS GROUND.
6. BOND PAD METALIZATION: GOLD.
7. CONNECTION NOT REQUIRED FOR
UNLABELED BOND PADS.
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