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 Hittite Microwave Corporation datasheets

Компоненты: 486, страницы: 5 (0.29 сек.)  
Hittite Microwave Corporation
Hittite Microwave Corporation
www.hittite.com
  1. HMC535LP4 - 24 - 25 GHz, Div-by-16, +11dBm Po, -98 dBc/Hz Phase Noise@100kHz
  2. HMC535LP4E - PLO, 14.7 - 15.4 GHz, +9dBm Po, -110 dBc/Hz Phase Noise@100kHzThe HMC535LP4 & HMC535LP4E are GaAs InGaPHeterojunction Bipolar Transistor (HBT) MMIC PLOs.The PLO’s phase noise performance is excellent overtemperature, shock, and process due to the oscillator’smonolithic structure. Power output is +9 dBm typicalfromA +5V supply voltage. All functions (VCO, Op-Amp, PFD, Prescaler) are fully integrated whileproviding allowances for off-chip customer specifi cloop components. The phase-locked oscillator ispacka
  3. HMC536LP2 - GaAs MMIC POSITIVE CONTROL T/R SWITCH, DC - 6.0 GHz
  4. HMC536LP2E - GaAs MMIC POSITIVE CONTROL T/R SWITCH, DC - 6.0 GHz
  5. HMC536MS8G - Gaas Mmic Positive Control T/r Switch, Dc - 6.0 Ghz
  6. HMC538LP4 - SMT, 6 - 16 GHz, 8dB Ins. Loss, 800-450 Degree Phase RangeThe HMC538LP4 & HMC538LP4E are Analog PhaseShifters which are controlled via an analog control voltagefrom 0 to +5V. THe HMC538LP4 & HMC538LP4EprovideA continuously variable phase shift of 0 to 800degrees at 6 GHz, and 0 to 450 degrees at 16 GHz,with consistent insertion loss versus phase shift. Thephase shift is monotonic with respect to control voltage.The control port hasA modulation bandwidthof 50 MHz. The low insertion loss and compact sizeena
  7. HMC539LP3 - DC - 4 GHz, 5 Bit, 0.25 to 7.75dB Attenuation Range, +50dBm Input IP35-bit GaAs IC digital attenuators in low cost leadlesssurface mount packages. This single positivecontrol line per bit digital attenuator utilizes an offchip AC ground capacitor for near DC operation,making it suitable forA wide variety of RF and IFapplications. Covering DC to 4.0 GHz, the insertionloss is less than 0.7 dB typical. The attenuator bitvalues are 0.25 (LSB), 0.5, 1, 2, and 4 dB forA totalattenuation of 7.75 dB. Attenuation
  8. HMC540LP3 - DC - 5.5 GHz, 4 Bit, 1 to 15dB Attenuation Range, +48dBm Input IP3The HMC540LP3 & HMC540LP3E are broadband4-bit GaAs IC digital attenuators in low cost leadlesssurface mount packages. This single positive controlline per bit digital attenuator utilizes off chip AC groundcapacitors for near DC operation, making it suitable fora wide variety of RF and IF applications. Covering DCto 5.5 GHz, the insertion loss is less than 1.0 dB typical.The attenuator bit values are 1 (LSB), 2, 4 and 8 dB fora total attenuati
  9. HMC541LP3 - DC - 5 GHz, 1 Bit, 10dB Attenuation, +50dBm Input IP3The HMC541LP3 & HMC541LP3E are broadband1-bit GaAs IC digital attenuators in low cost leadlesssurface mount packages. This single positivecontrol line digital attenuator utilizes off chipAC ground capacitors for near DC operation,making it suitable forA wide variety of RF and IFapplications. Covering DC to 5.0 GHz, the insertionloss is less than 1.0 dB typical. Attenuation accuracy isexcellent at ± 0.2 dB typical step error. The attenuatoralso features a
  10. HMC541LP3E - DC - 5 GHz, 1 Bit, 10dB Attenuation, +50dBm Input IP3The HMC541LP3 & HMC541LP3E are broadband1-bit GaAs IC digital attenuators in low cost leadlesssurface mount packages. This single positivecontrol line digital attenuator utilizes off chipAC ground capacitors for near DC operation,making it suitable forA wide variety of RF and IFapplications. Covering DC to 5.0 GHz, the insertionloss is less than 1.0 dB typical. Attenuation accuracy isexcellent at ± 0.2 dB typical step error. The attenuatoralso features a
  11. HMC542LP4 - 0.5 Db Lsb Gaas Mmic 6-bit Digital Serial Control Attenuator, Dc - 3.0 Ghz
  12. HMC542LP4E - 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL SERIAL CONTROL ATTENUATOR, DC - 3.0 GHz
  13. HMC544 - The HMC544 & HMC544E are low cost SPDT switchesin 6-lead SOT26 packages for use in trans...
  14. HMC545 - DC - 3 GHz, 0.4dB Insertion Loss, 31dB Isolation, +34dBm Input P1dBswitches in 6-lead SOT26 plastic packages for usein general switching applications which require verylow insertion loss and very small size. With 0.25dB typical loss, these devices can control signalsfrom DC to 3.0 GHz and are especially suited forIF and RF applications including Cellular/3G, ISM,automotive and portables. The design providesexceptional insertion loss performance, ideal for fi lterand receiver switching. RF1 and RF2 are refl
  15. HMC546LP2 - The HMC546LP2 & HMC546LP2E are failsafeSPDT switches in leadless DFN surface mountplastic packages for use in transmit-receive, andLNA protection applications which require very lowdistortion and high power handling of up to 10 watts. Thedevice can control signals from 200 - 2700 MHz* andis especially suited for WiMAX and WiBro repeaters,PMR and automotive telematic applications. Thedesign provides exceptional P0.1 dB of +40 dBm and+65 dBm IIP3 on the Transmit (Tx) port. The failsafetopology allows the swit
  16. HMC546MS8G - Gaas Mmic 10w T/r Switch 0.2 - 2.2 Ghz
  17. HMC546MS8GE - GaAs MMIC 10W T/R SWITCH 0.2 - 2.2 GHz
  18. HMC547LP3 - Gaas Mmic Spdt Non-reflective Switch, Dc - 20.0 Ghz
  19. HMC548LP3 - The HMC548LP3 & HMC548LP3E are comprised oftwo internally matched SiGe HBT MMIC low noiseamplifi er stages housed in 3x3 mm leadless SMTpackages. The unique topology of the HMC548LP3& HMC548LP3E provides interstage access allowingthe designer to placeA bandpass fi lter between thetwo amplifi er stages. This fi ltering approach enablesthe receiver to reject nearby blocking signals such asthose emitted from cellular and 3G hand-helds, withoutincurring the noise fi gure degradation associated witha high rejec
  20. HMC549MS8G - DUAL OUTPUT LOW NOISE AMPLIFIER, 0.04 - 0.96 GHzThe HMC549MS8G & HMC549MS8GE are GaAsPHEMT MMIC Low Noise Amplifi ers that are idealpre-amplifi ers for CATV Set Top Box, Home Gateway,and Digital Television receivers operating between40 and 960 MHz. This high dynamic range LNA hasbeen optimized to provide 3.5 dB noise fi gure and+27 dBm output IP3 fromA single supply of +5.0V @120 mA. The outputs of this LNA are extremely wellbalanced, and can be used to driveA differential inputtuner with very high input
  21. HMC549MS8GE - DUAL OUTPUT LOW NOISE AMPLIFIER, 0.04 - 0.96 GHzThe HMC549MS8G & HMC549MS8GE are GaAsPHEMT MMIC Low Noise Amplifi ers that are idealpre-amplifi ers for CATV Set Top Box, Home Gateway,and Digital Television receivers operating between40 and 960 MHz. This high dynamic range LNA hasbeen optimized to provide 3.5 dB noise fi gure and+27 dBm output IP3 fromA single supply of +5.0V @120 mA. The outputs of this LNA are extremely wellbalanced, and can be used to driveA differential inputtuner with very high input
  22. HMC550 - Gaas Mmic Spst Failsafe Switch, Dc - 6 Ghz
  23. HMC550E - GAAS MMIC SPST FAILSAFE SWITCH, DC - 6 GHz
  24. HMC551LP4 - GaAs MMIC MIXER w/ INTEGRATEDLO AMPLIFIER, 0.8 - 1.2 GHzGeneral DescriptionFeaturesFunctional DiagramThe HMC551LP4 & HMC551LP4E are high linearity,double balanced Converter ICs that operate from0.8 to 1.2 GHz and deliverA +27 dBm input third orderintercept point. The LO amplifi er output and highdynamic range mixer input are positioned so that anexternal LO fi lter can be placed in Series betweenthem. The converter provides 27 dB of LO to RF isolationand is ideal for upconverter and downconverterapplicatio
  25. HMC551LP4E - GaAs MMIC MIXER w/ INTEGRATEDLO AMPLIFIER, 0.8 - 1.2 GHzGeneral DescriptionFeaturesFunctional DiagramThe HMC551LP4 & HMC551LP4E are high linearity,double balanced Converter ICs that operate from0.8 to 1.2 GHz and deliverA +27 dBm input third orderintercept point. The LO amplifi er output and highdynamic range mixer input are positioned so that anexternal LO fi lter can be placed in Series betweenthem. The converter provides 27 dB of LO to RF isolationand is ideal for upconverter and downconverterapplicatio
  26. HMC552LP4 - GaAs MMIC MIXER w/ INTEGRATEDLO AMPLIFIER, 1.6 - 3.0 GHzTypical ApplicationsThe HMC552LP4 / HMC552LP4E is ideal forWireless Infrastructure Applications:• PCS / 3G Infrastructure• Base Stations & Repeaters• WiMAX & WiBro• ISM & Fixed WirelessGeneral DescriptionFeaturesFunctional DiagramThe HMC552LP4 & HMC552LP4E are high linearity,double-balanced converter ICs that operate from1.6 to 3.0 GHz and deliverA +25 dBm input thirdorder intercept point. The LO amplifi er output andhigh dynamic range mixer input are
  27. HMC552LP5 - GaAs MMIC MIXER w/ INTEGRATEDLO AMPLIFIER, 1.6 - 3.0 GHzTypical ApplicationsThe HMC552LP4 / HMC552LP4E is ideal forWireless Infrastructure Applications:• PCS / 3G Infrastructure• Base Stations & Repeaters• WiMAX & WiBro• ISM & Fixed WirelessGeneral DescriptionFeaturesFunctional DiagramThe HMC552LP4 & HMC552LP4E are high linearity,double-balanced converter ICs that operate from1.6 to 3.0 GHz and deliverA +25 dBm input thirdorder intercept point. The LO amplifi er output andhigh dynamic range mixer input are
  28. HMC553 - The HMC553 isA passive double balanced mixerthat can be used as an upconverter or downc...
  29. HMC553LC3B - The HMC553LC3B isA general purpose doublebalanced mixer inA leadless RoHS compliant SMTpackage that can be used as an upconverter ordownconverter between 7 and 14 GHz. This mixeris fabricated inA GaAs MESFET process, andrequires no external components or matching circuitry.The HMC553LC3B provides excellent LO toRF and LO to IF isolation due to optimized balunstructures and operates with LO drive levels as low as+9 dBm. The RoHS compliant HMC553LC3B eliminatesthe need for wire bonding, and is compatiblewi
  30. HMC554 - The HMC554 isA passive double balanced mixerthat can be used as an upconverter or downc...
  31. HMC554LC3B - The HMC554LC3B isA general purpose doublebalanced mixer inA leadless RoHS compliant SMTpackage that can be used as an upconverter ordownconverter between 11 and 20 GHz. This mixer isfabricated inA GaAs MESFET process, and requiresno external components or matching circuitry. TheHMC554LC3B provides excellent LO to RF and LOto IF isolation due to optimized balun structures. TheRoHS compliant HMC554LC3B eliminates the needfor wire bonding, and is compatible with high volumesurface mount manufacturing techni
  32. HMC555 - The HMC555 isA compact I/Q MMIC mixer whichcan be used as either an Image Reject Mixer or aSingle Sideband Upconverter. The chip utilizes twodouble balanced mixer cells andA 90 degree hybridfabricated inA GaAs MESFET process. All data shownbelow is taken with the chip mounted inA 50 Ohmtest fi xture and includes the effects of 1 mil diameterx 12 mil length bond wires on each port.A lowfrequency quadrature hybrid was used to producea 100 MHz USB IF output. This compact mixer is amuch more compact altern
  33. HMC556 - The HMC556 isA compact I/Q MMIC mixer whichcan be used as either an Image Reject Mixer or aSingle Sideband Upconverter. The chip utilizes twodouble balanced mixer cells andA 90 degree hybridfabricated inA GaAs MESFET process. All datashown below is taken with the chip mounted in a50 Ohm test fi xture and includes the effects of 1 mildiameter x 12 mil length bond wires on each port.A low frequency quadrature hybrid was used to producea 100 MHz USB IF output. This compact mixerisA much smaller alternative
  34. HMC559 - DC - 20 GHz, Power Amp, +30 dBm Psat, 14dB Gain, +36dBm OIP3The HMC559 isA GaAs MMIC PHEMT DistributedPower Amplifi er die which operates between DC and20 GHz. The amplifi er provides 14 dB of gain,+36 dBm output IP3 and +28 dBm of output powerat 1 dB gain compression while requiring 400 mAfromA +10V supply. Gain fl atness is slightly positivefrom 4 to 20 GHz making the HMC559 ideal forEW, ECM and radar driver amplifi er applications.The HMC559 amplifi er I/O’s are internally matched to50 Ohms facilitatin
  35. HMC560 - The HMC560 chip isA miniature passive double balancedmixer which is fabricated inA GaA...
  36. HMC560LM3 - The HMC560LM3 isA 24 - 40 GHz passive, doublebalancedMMIC mixer inA SMT leadless chip carrierpackage. The mixer is fabricated inA GaAs MESFETprocess, and can be used asA downconverter orupconverter. The wide operating bandwidth allows thisdevice to be used across multiple radio bands with acommon platform. Excellent isolations are provided byon-chip baluns. The HMC560LM3 requires no externalcomponents and no DC bias. All data is with thenon-hermetic, epoxy sealed LM3 package mountedinA 50 Ohm test fi x
  37. HMC562 - 2 - 35 GHz, Driver Amp, +21.5 dBm Psat, 12dB Gain, 4 dB NF, +25dBm OIP3The HMC562 isA GaAs MMIC PHEMT DistributedDriver Amplifi er die which operates between 2 and35 GHz. The amplifi er provides 12.5 dB of gain,+25 dBm output IP3 and +18 dBm of output powerat 1 dB gain compression while requiring 80 mAfromA +8V supply. The HMC562 is ideal for EW,ECM and radar driver amplifi er applications. TheHMC562 amplifi er I/O’s are DC blocked and internallymatched to 50 Ohms facilitating integration into Multi-Chip-
  38. HMC564 - GaAs PHEMT MMIC LOW NOISEAMPLIFIER, 7 - 13.5 GHzTypical ApplicationsThe HMC564 is ideal for use asA LNA or driver amplifierfor:• Point-to-Point Radios• Point-to-Multi-Point Radios• Test Equipment and Sensors• Military & SpaceFeaturesFunctional DiagramThe HMC564 isA high dynamic range GaAs PHEMTMMIC Low Noise Amplifi er (LNA) chip which operatesfrom 7 to 13.5 GHz. The HMC564 features extremelyfl at performance characteristics including 17 dB ofsmall signal gain, 1.8 dB of noise fi gure and outputIP3 of 24
  39. HMC565 - General DescriptionFeaturesFunctional DiagramThe HMC565 isA high dynamic range GaAs PHEMTMMIC Low Noise Amplifi er (LNA) chip which operatesfrom 6 to 20 GHz. The HMC565 features 22 dB of smallsignal gain, 2.3 dB of noise fi gure and hasA consistentIP3 of 20 dBm across the operating band. This selfbiasedLNA is ideal for hybrid and MCM assembliesdue to its compact size, widband performance, single+3V supply operation, and DC blocked RF I/O’s.All data is measured with the chip inA 50 Ohm testfi xture connec
  40. HMC566 - Typical ApplicationsThe HMC566 is ideal for use asA LNA or driver amplifierfor:• Point-to-Point Radios• Point-to-Multi-Point Radios & VSAT• Test Equipment and Sensors• Military & SpaceFeaturesFunctional DiagramThe HMC566 isA high dynamic range GaAs PHEMTMMIC Low Noise Amplifi er (LNA) chip which operatesfrom 29 to 36 GHz. The HMC566 provides 20 dB ofsmall signal gain, 2.8 dB of noise fi gure and outputIP3 of 23 dBm across the operating band. This selfbiasedLNA is ideal for hybrid and MCM assembliesdue to
  41. HMC574MS8 - DC - 3 GHz, 0.3dB Insertion Loss, 30dB Isolation, +39dBm Input P1dBThe HMC574MS8 & HMC574MS8E are low-costSPDT switches in 8-lead MSOP packages for use intransmit/receive applications which require very lowdistortion at high incident power levels. The devicecan control signals from DC to 3.0 GHz and is especiallysuited for Cellular/3G infrastructure, WiMAXand WiBro applications with only 0.3 dB typicalinsertion loss. The design provides 5 watt powerhandling performance and +65 dBm third orderinterceptat +8
  42. HMC575LP4 - The HMC575LP4 & HMC575LP4E are x2 activebroadband frequency multipliers utilizing GaAsPHEMT technology inA leadless RoHS compliantSMT package. When driven byA 3 dBm signal, themultiplier provides +17 dBm typical output power from6 to 9 GHz. The Fo and 3Fo isolations are 15 dBc withrespect to output signal level. This frequency multiplierfeatures DC blocked I/O’s, and is ideal for use in LOmultiplier chains for Pt to Pt & VSAT Radios yieldingreduced parts count vs. traditional approaches. The lowadditive S
  43. HMC576 - The HMC576 die isA x2 active broadband frequ-encymultiplier utilizing GaAs PHEMT technology. Whendriven byA +3 dBm signal, the multiplier provides +17dBm typical output power from 18 to 29 GHz. The Fo and3Fo isolations are >20 dBc and >30 dBc respectivelyat 24 GHz. The HMC576 is ideal for use in LO multiplierchains for Pt to Pt & VSAT Radios yielding reducedparts count vs. traditional approaches. The low additiveSSB Phase Noise of -132 dBc/Hz at 100 kHz offsethelps maintain good system noise performance.
  44. HMC576LC3B - The HMC576LC3B isA x2 active broadband frequencymultiplier utilizing GaAs PHEMT technology in aleadless RoHS compliant SMT package. When drivenbyA +3 dBm signal, the multiplier provides +15 dBmtypical output power from 18 to 29 GHz. The Fo and3Fo isolations are >20 dBc at 24 GHz. TheHMC576LC3B is ideal for use in LO multiplier chainsfor Pt to Pt & VSAT Radios yielding reduced partscount vs. traditional approaches. The low additiveSSB Phase Noise of -132 dBc/Hz at 100 kHz offsethelps maintain good system n
  45. HMC577LC4B - The HMC577LC4B isA x2 active broadband frequencymultiplier utilizing GaAs PHEMT technology in aleadless RoHS compliant SMT package. When drivenbyA +5 dBm signal, the multiplier provides +20 dBmtypical output power from 27 to 31 GHz. The Fo and3Fo isolations are >55 dBc at 29 GHz. TheHMC577LC4B is ideal for use in LO multiplier chainsfor Pt to Pt & VSAT Radios yielding reduced partscount vs. traditional approaches. The low additiveSSB Phase Noise of -128 dBc/Hz at 100 kHz offsethelps maintain good system n
  46. HMC578 - The HMC578 die isA x2 active broadband frequencymultiplier utilizing GaAs PHEMT technology. Whendriven byA +3 dBm signal, the multiplier provides +17dBm typical output power from 24 to 33 GHz. The Fo and3Fo isolations are >25 dBc and >36 dBc respectivelyat 28 GHz. The HMC578 is ideal for use in LO multiplierchains for Pt to Pt & VSAT Radios yielding reducedparts count vs. traditional approaches. The low additiveSSB Phase Noise of -132 dBc/Hz at 100 kHz offsethelps maintain good system noise performance.
  47. HMC578LC3B - The HMC578LC3B isA x2 active broadband frequencymultiplier utilizing GaAs PHEMT technology in aleadless RoHS compliant SMT package. When drivenbyA +3 dBm signal, the multiplier provides +15 dBmtypical output power from 24 to 33 GHz. The Fo and3Fo isolations are >20 dBc and >30 dBc respectivelyat 28 GHz. The HMC578LC3B is ideal for use in LOmultiplier chains for Pt to Pt & VSAT Radios yieldingreduced parts count vs. traditional approaches. Thelow additive SSB Phase Noise of -129 dBc/Hz at100 kHz offset hel
  48. HMC579 - The HMC579 die isA x2 active broadband frequencymultiplier utilizing GaAs PHEMT technology. Whendriven byA +3 dBm signal, the multiplier provides +13dBm typical output power from 32 to 46 GHz. The Foisolation is >25 dBc at 38 GHz. The HMC579 is idealfor use in LO multiplier chains for Pt to Pt & VSATRadios yielding reduced parts count vs. traditionalapproaches. The low additive SSB Phase Noise of-127 dBc/Hz at 100 kHz offset helps maintain goodsystem noise performance.
  49. HMC584LP5 - MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 12.5 - 13.9 GHz
  50. HMC584LP5E - MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 12.5 - 13.9 GHz
  51. HMC586LC4B - 4 - 8 GHz, +5dBm Pout, -100dBc/Hz SSB Phase Noise@100kHz General DescriptionFeaturesFunctional DiagramThe HMC586LC4B isA wideband GaAs InGaPVoltage Controlled Oscillator which incorporates theresonator, negative resistance device, and varactordiode. Output power and phase noise performanceare excellent over temperature due to the oscillator’smonolithic construction. The Vtune port acceptsan analog tuning voltage from 0 to +18V. TheHMC586LC4B VCO operates fromA single +5V supply,consumes only 55 mA of curr
  52. HMC587LC4B - WIDEBAND MMIC VCO w/ BUFFER AMPLIFIER, 5 - 10 GHzControlled Oscillator which incorporates the resonator,negative resistance device, and varactor diode. Outputpower and phase noise performance are excellentover temperature due to the oscillator’s monolithicconstruction. The Vtune port accepts an analog tuningvoltage from 0 to +18 volts. The HMC587LC4B VCOoperates fromA single +5V supply, consumes only55 mA of current, and is housed inA RoHS compliantSMT package. This wideband VCO uniquely combinesthe attri
  53. HMC588LC4B - WIDEBAND MMIC VCO w/ BUFFER AMPLIFIER, 8.0 - 12.5 GHzThe HMC588LC4B isA wideband GaAs InGaP HBTMMIC Voltage Controlled Oscillator which incorporatesthe resonator, negative resistance device,and varactor diode. Output power and phase noiseperformance are excellent over temperature due tothe oscillator’s monolithic construction. The Vtune portaccepts an analog tuning voltage from 0 to +13V, andaccommodatesA very fast 65 MHz tuning bandwidth.The HMC588LC4B VCO operates fromA single +5Vsupply, consumes only
  54. HMC595 - Gaas Mmic 3 Watt T/r Switch, Dc - 3 Ghz
  55. HMC595E - GaAs MMIC 3 WATT T/R SWITCH, DC - 3 GHz
  56. HMC603MS10 - 0.5 dB LSB GaAs MMIC 5-BIT DIGITAL POSITIVE CONTROL ATTENUATOR, 0.7 - 3.8 GHzThe HMC603MS10 & HMC603MS10E are generalpurpose broadband 5-bit positive control GaAs ICdigital attenuators in 10 lead MSOP surface mountplastic packages. Covering 0.7 to 3.8 GHz, the insertionloss is less than 2.0 dB typical. The attenuatorbit values are 0.5 (LSB), 1, 2, 4 and 8 dB forA totalattenuation of 15.5 dB. Attenuation accuracy isexcellent at ± 0.15 dB typical with an IIP3 of +50 dBm.Five bit control voltage inputs, toggl
  57. HMC603QS16 - 0.5 dB LSB GaAs MMIC 5-BIT DIGITAL POSITIVE CONTROL ATTENUATOR, 0.7 - 3.8 GHzThe HMC603QS16 & HMC603QS16E are generalpurpose broadband 5-bit positive control GaAs ICdigital attenuators in 16 lead QSOP surface mountplastic packages. Covering 0.7 to 3.8 GHz, the insertionloss is less than 1.9 dB typical. The attenuatorbit values are 0.5 (LSB), 1, 2, 4 and 8 dB forA totalattenuation of 15.5 dB. Attenuation accuracy is excellentat ± 0.15 dB typical with an IIP3 of +50 dBm.Five bit control voltage inputs, toggl
  58. HMC-C001 - 2 - 20 GHz, 15dB Gain, +14dBm P1dB, 2.2dB NFThe HMC-C001 isA GaAs MMIC PHEMT LowNoise Distributed Amplifi er inA miniature,hermetic module with replaceable SMA connectorswhich operates between 2 and 20 GHz.The self-biased amplifi er provides 15 dB of gain,2 to 3 dB noise fi gure and +14 dBm of outputpower at 1 dB gain compression while requiringa single +12V supply. Gain fl atness is excellentfrom 2 - 18 GHz making the HMC-C001 idealfor EW, ECM RADAR and test equipmentapplications. The wideband amplifi er
  59. HMC-C002 - 2 - 20 GHz, 14dB Gain, +18dBm P1dB, 2dB NFThe HMC-C002 isA GaAs MMIC PHEMTLow Noise Distributed Amplifi er inA miniature,hermetic module with replaceable SMA connectorswhich operates between 2 and 20 GHz. Theself-biased amplifi er provides 13 dB of gain, 2 to3 dB noise fi gure and up to +18 dBm of outputpower at 1 dB gain compression while requiringa single +12V supply. Gain fl atness is excellentfrom 2 - 18 GHz making the HMC-C002 idealfor EW, ECM RADAR and test equipmentapplications. The wideband amplif
  60. HMC-C003 - 2 - 20 GHz, 15dB Gain, +26dBm P1dB, 4dB NFThe HMC-C003 isA GaAs MMIC PHEMTDistributed Power Amplifi er inA miniature,hermetic module with replaceable SMA connectorswhich operates between 2 and 20 GHz. Theself-biased amplifi er provides 15 dB of gain, +30dBm output IP3 and up to +26 dBm of outputpower at 1 dB gain compression while requiringa single +12V supply. Gain fl atness is excellentfrom 2 - 18 GHz making the HMC-C003 idealfor EW, ECM RADAR and test equipmentapplications. The wideband amplifi er I/Os
  61. HMC-C004 - 10 MHz - 20 GHz, 16dB Gain, +23dBm P1dB, 3dB NFThe HMC-C004 isA GaAs MMIC PHEMTDistributed Driver Amplifi er inA miniature,hermetic module with replaceable SMA connectorswhich operates between 10 MHz and 20GHz. The self-biased amplifi er provides 15 dBof gain, 3 to 4 dB noise fi gure and +24 dBm ofsaturated output power while requiringA single+12V supply. Gain fl atness is excellent at ± 0.5dB as well as ± 2 deg deviation from linear phasefrom 0.01 to 10 GHz making the HMC-C004ideal for OC192 fi ber opti
  62. HMC-C005 - 0.5 -18 GHz, Divide-by-2, -150 dBc/Hz SSB Phase Noise@100kHz offset The HMC-C005 isA low noise Divide-by-2 StaticDivider utilizing InGaP GaAs HBT technologypackaged inA miniature, hermetic module withreplacable SMA connectors. This device operatesfrom 0.5 to 18 GHz input frequency from asingle +5.0V DC supply. The low additive SSBphase noise of -150 dBc/Hz at 100 kHz offsethelps the user maintain excellent system noiseperformance.
  63. HMC-C006 - 0.5 -18 GHz, Divide-by-4, -150 dBc/Hz SSB Phase Noise@100kHz offsetThe HMC-C006 isA low noise Divide-by-4 StaticDivider utilizing InGaP GaAs HBT technologypackaged inA miniature, hermetic module withreplacable SMA connectors. This device operatesfrom 0.5 to 18 GHz input frequency from asingle +5.0V DC supply. The low additive SSBphase noise of -150 dBc/Hz at 100 kHz offsethelps the user maintain excellent system noiseperformance.Ultra Low SSB Phase Noise: -150 dBc/HzVery Wide BandwidthOutput Power: -4 dBm
  64. HMC-C007 - 0.5 -18 GHz, Divide-by-8, -150 dBc/Hz SSB Phase Noise@100kHz offsetThe HMC-C007 isA low noise Divide-by-8 StaticDivider utilizing InGaP GaAs HBT technologypackaged inA miniature, hermetic module withreplacable SMA connectors. This device operatesfrom 0.5 to 18 GHz input frequency from asingle +5.0V DC supply. The low additive SSBphase noise of -150 dBc/Hz at 100 kHz offsethelps the user maintain excellent system noiseperformance.Ultra Low SSB Phase Noise: -150 dBc/HzVery Wide BandwidthOutput Power: -4 dBm
  65. HMC-C008 - 15 Watt Power Amplifier Module for Wireless Infrastructure & ATE 1.8 - 2.2 GHz, 42dB Gain, +34.5dBm W-CDMA Output Power
  66. HMC-C009 - GaAs MMIC I/Q MIXER MODULE 4.0 - 8.5 GHzThe HMC-C009 isA passive I /Q MMIC mixer housedinA miniature hermetic module which can be usedas either an Image Reject Mixer orA Single SidebandUpconverter. The module utilizes two standardHittite double balanced mixer cells andA 90 degreehybrid fabricated onA GaAs MESFET process. ThisMMIC based module isA more reliable and consistentalternative to hybrid style I/Q Mixers and SingleSideband Converter assemblies. The module featuresremovable SMA connectors which
  67. HMC-C010 - Module, 6 - 16 GHz, 8dB Ins. Loss, 800-450 Degree Phase RangeThe HMC-C010 is an Analog Phase Shifter whichis controlled via an analog control voltage from 0 to+5V. The HMC-C010 providesA continuously variablephase shift of 0 to 800 degrees at 6 GHz, and 0to 450 degrees at 16 GHz, with consistent insertionloss versus phase shift. The phase shift is monotonicwith respect to control voltage. The control port has amodulation bandwidth of 50 MHz. The low insertionloss and extremely robust packaging enable this
  68. HMC-C011 - DC - 20 GHz, +23dBm P1dB, CMOS Control & 1.3 nSec Fast Switching The HMC-C011 isA general purpose broadband highisolation non-refl ective GaAs MESFET SPDT switchhoused inA miniature hermetic module with fi eldreplaceable SMA connectors. Covering DC to 20GHz, the switch offers high isolation and low insertionloss. The switch features >45 dB isolation up to 5 GHzand >35 dB isolation up to 20 GHz. CMOS interfaceallowsA single positive +5V bias voltage at very lowDC currents.
  69. HMC-C012 - 10 WATT POWER AMPLIFIER MODULE, 400 - 1000 MHzThe HMC-C012 isA 10 Watt Power Amplifi er...
  70. HMC-C013 - 10 WATT POWER AMPLIFIER MODULE, 800 - 2000 MHzThe HMC-C013 isA 10 Watt Power Amplifi er...
  71. HMC-C014 - GaAs MMIC FUNDAMENTAL MIXER MODULE, 16 - 32 GHzThe HMC-C014 isA general purpose passive doublebalancedmixer housed inA miniature hermeticmodule that can be used as an upconverter ordownconverter between 16 and 32 GHz. This mixerrequires no external components or matchingcircuitry. The HMC-C014 provides excellent LO toRF and LO to IF suppression due to optimized balunstructures. The mixer operates with LO drive levelsfrom +9 dBm to +15 dBm and requires no DC Bias.The HMC-C014 may also be used asA Bi-Phase
  72. HMC-C015 - GaAs MMIC DOUBLE BALANCED MIXER MODULE, 24 - 38 GHzThe HMC-C015 isA general purpose double-balancedmixer housed inA miniature hermetic module whichcan be used as an upconverter or downconverterbetween 24 and 38 GHz. This mixer requires noexternal components or matching circuitry. TheHMC-C015 provides excellent, LO to RF, and LO toIF suppression due to optimized balun structures. Themixer operates with LO drive levels from +11 to +15dBm and requires no DC bias. The HMC-C015 mayalso be used asA Bi-Phase Mo
  73. HMC-C016 - Wideband LNA module, 7 - 17 GHz
  74. HMC-C017 - Wideband LNA module, 17 - 27 GHz
  75. HMC-C020 - WIDEBAND POWER AMPLIFIER MODULE, 17 - 24 GHz
  76. HMC-C021 - WIDEBAND POWER AMPLIFIER MODULE, 21 - 31 GHz
  77. HMC-C022 - Wideband LNA module, 2 - 20 GHz
  78. HMC-C023 - Wideband Driver Amplifier Module, 2 - 20 GHz
  79. HMC-C024 - Wideband Driver Amplifier Module, 10 MHz - 20 GHz
  80. HMC-C026 - Wideband High Gain Power Amplifier Module, 2 - 20 GHz
  81. HMC-C027 - Typical ApplicationsThe HMC-C027 Wideband LNA is ideal for:• Telecom Infrastructure• Microwave Radio & VSAT• Military & Space• Test Instrumentation• Fiber Optics]FeaturesFunctional DiagramThe HMC-C027 isA GaAs MMIC PHEMT Low NoiseAmplifi er inA miniature, hermetic module whichoperates between 29 and 36 GHz. This high dynamicrange amplifi er module provides 20 dB of gain, 2.9dB noise fi gure and up to +22 dBm of output IP3 froma single +3V supply. The wideband amplifi er I/Os areinternally matched to 50 Oh
  82. MAX5953A - IEEE 802.3af PD Interface and PWM Controllers with Integrated Power MOSFETsThe MAX5953A/MAX5953B/MAX5953C/MAX5953D integrateA complete power IC solution for Powered Devices (PD) inA Power-Over-Ethernet (PoE) system, in compliance with the IEEE 802.3af standard. The MAX5953A/MAX5953B/MAX5953C/MAX5953D provide the PD withA detection signature,A classification signature, and an integrated isolation switch with programmable inrush current control. These devices also integrateA voltage-mode PWM controller w
  83. MAX5953AUTM+ - IEEE 802.3af PD Interface and PWM Controllers with Integrated Power MOSFETsThe MAX5953A/MAX5953B/MAX5953C/MAX5953D integrateA complete power IC solution for Powered Devices (PD) inA Power-Over-Ethernet (PoE) system, in compliance with the IEEE 802.3af standard. The MAX5953A/MAX5953B/MAX5953C/MAX5953D provide the PD withA detection signature,A classification signature, and an integrated isolation switch with programmable inrush current control. These devices also integrateA voltage-mode PWM controller w
  84. MAX5953AUTM+T - IEEE 802.3af PD Interface and PWM Controllers with Integrated Power MOSFETsThe MAX5953A/MAX5953B/MAX5953C/MAX5953D integrateA complete power IC solution for Powered Devices (PD) inA Power-Over-Ethernet (PoE) system, in compliance with the IEEE 802.3af standard. The MAX5953A/MAX5953B/MAX5953C/MAX5953D provide the PD withA detection signature,A classification signature, and an integrated isolation switch with programmable inrush current control. These devices also integrateA voltage-mode PWM controller w
  85. MAX5953BUTM+ - IEEE 802.3af PD Interface and PWM Controllers with Integrated Power MOSFETsThe MAX5953A/MAX5953B/MAX5953C/MAX5953D integrateA complete power IC solution for Powered Devices (PD) inA Power-Over-Ethernet (PoE) system, in compliance with the IEEE 802.3af standard. The MAX5953A/MAX5953B/MAX5953C/MAX5953D provide the PD withA detection signature,A classification signature, and an integrated isolation switch with programmable inrush current control. These devices also integrateA voltage-mode PWM controller w
  86. MAX5953BUTM+T - IEEE 802.3af PD Interface and PWM Controllers with Integrated Power MOSFETsThe MAX5953A/MAX5953B/MAX5953C/MAX5953D integrateA complete power IC solution for Powered Devices (PD) inA Power-Over-Ethernet (PoE) system, in compliance with the IEEE 802.3af standard. The MAX5953A/MAX5953B/MAX5953C/MAX5953D provide the PD withA detection signature,A classification signature, and an integrated isolation switch with programmable inrush current control. These devices also integrateA voltage-mode PWM controller w

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