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 Hittite Microwave Corporation datasheets

Компоненты: 486, страницы: 5 (0.32 сек.)  
Hittite Microwave Corporation
Hittite Microwave Corporation
www.hittite.com
  1. HMC453ST89 - InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.4 - 2.2 GHzThe HMC453ST89 isA high dynamic rangeGaAs InGaP HBT 1.6 Watt MMIC poweramplifi er operating from 400 - 2200 MHz.Packaged in an industry standard SOT89package, the amplifi er gain is typically 8.5 dBfrom 1.7 to 2.2 GHz. UtilizingA minimum numberof external components andA single +5V supply,the amplifi er output IP3 can be optimized to +49dBm from 1.8 - 2.2 GHz. The high output IP3 andPAE makes the HMC453ST89 an ideal poweramplifi er for Cellular/PCS/3G and
  2. HMC454ST89 - Ingap Hbt 1/2 Watt High Ip3 Amplifier, 0.4 - 2.5 Ghz
  3. HMC455LP3 - Ingap Hbt 1/2 Watt High Ip3 Amplifier, 1.7 - 2.5 Ghz
  4. HMC457QS16G - Ingap Hbt 1 Watt Power Amplifier, 1.7 - 2.2 Ghz
  5. HMC459 - Gaas Phemt Mmic Power Amplifier, Dc - 18.0 Ghz
  6. HMC460 - Gaas Phemt Mmic Low Noise Amplifier, Dc - 20.0 Ghz
  7. HMC461LP3 - Ingap Hbt 1 Watt High Ip3 Amplifier, 1.7 - 2.2 Ghz
  8. HMC462 - Gaas Phemt Mmic Low Noise Amplifier, 2.0 - 20.0 Ghz
  9. HMC462LP5 - Gaas Phemt Mmic Low Noise Amplifier, 2.0 - 20.0 Ghz
  10. HMC463 - Gaas Phemt Mmic Low Noise Amplifier, Dc - 20.0 Ghz
  11. HMC463LP5 - Gaas Phemt Mmic Low Noise Agc Amplifier, 2.0 - 20.0 Ghz
  12. HMC464 - Gaas Phemt Mmic Power Amplifier, 2.0 - 20.0 Ghz
  13. HMC464LP5 - Gaas Phemt Mmic Power Amplifier, 2.0 - 20.0 Ghz
  14. HMC465 - Gaas Phemt Mmic Modulator Driver Amplifier, Dc - 20.0 Ghz
  15. HMC465LP5 - Gaas Phemt Mmic Modulator Driver Amplifier, Dc - 20.0 Ghz
  16. HMC466LP4 - Mmic Vco W/ Buffer Amplifier, 6.1 - 6.72 Ghz
  17. HMC467LP3 - 2 Db Lsb Gaas Mmic 2-bit Digital Positive Control Attenuator, Dc - 6.0 Ghz
  18. HMC468LP3 - 1 Db Lsb Gaas Mmic 3-bit Digital Positive Control Attenuator, Dc - 6.0 Ghz
  19. HMC469MS8G - Sige Hbt Dual Channel Gain Block Mmic Amplifier, Dc - 5.0 Ghz
  20. HMC470LP3 - 1 Db Lsb Gaas Mmic 5-bit Digital Positive Control Attenuator, Dc - 3.0 Ghz
  21. HMC470LP3E - 1 dB LSB GaAs MMIC 5-BIT DIGITAL POSITIVE CONTROL ATTENUATOR, DC - 3.0 GHz
  22. HMC471MS8G - Sige Hbt Dual Channel Gain Block Mmic Amplifier, Dc - 5.0 Ghz
  23. HMC472LP4 - 0.5 Db Lsb Gaas Mmic 6-bit Digital Positive Control Attenuator, Dc - 3.0 Ghz
  24. HMC472LP4E - 6-Bit, 0.5 to 31.5dB Range, DC to 3 GHz, +/- 0.25 dB Bit AccuracyThe HMC472LP4 & HMC472LP4E are broadband 6-bit GaAs IC digital attenuators in low cost leadlesssurface mount packages. This single positive controlline per bit digital attenuator incorporates off chip ACground capacitors for near DC operation, making itsuitable forA wide variety of RF and IF applications.Covering DC to 3.0 GHz, the insertion loss is less than2.0 dB typical. The attenuator bit values are 0.5 (LSB),1, 2, 4, 8, and 16 dB forA t
  25. HMC473MS8 - Gaas Mmic Voltage-variable Attenuator, 0.45 - 2.2 Ghz
  26. HMC474MP86 - DC - 5.5 GHz, 15.5dB Gain, +22dBm OIP3, +8dBm P1dB
  27. HMC476MP86 - Sige Hbt Gain Block Mmic Amplifier, Dc - 6.0 Ghz
  28. HMC478MP86 - Sige Hbt Gain Block Mmic Amplifier, Dc - 4.0 Ghz
  29. HMC478ST89 - DC - 4 GHz, 22dB Gain, +32dBm OIP3, +18dBm P1dB Transistor (HBT) Gain Block MMIC SMT amplifi ercovering DC to 4 GHz. Packaged in an industrystandard SOT89, the amplifi er can be used as acascadable 50 Ohm RF/IF gain stage as well as aLO or PA driver with up to +20 dBm output power.The HMC478ST89 offers 22 dB of gain withA +30dBm output IP3 at 850 MHz while requiring only62mA fromA single positive supply. The Darlingtonfeedback pair used results in reduced sensitivity tonormal process variations and excell
  30. HMC479MP86 - Sige Hbt Gain Block Mmic Amplifier, Dc - 5.0 Ghz
  31. HMC479ST89 - Sige Hbt Gain Block Mmic Amplifier, Dc - 5.0 Ghz
  32. HMC480ST89 - Ingap Hbt Gain Block Mmic Amplifier, Dc - 5.0 Ghz
  33. HMC481MP86 - Sige Hbt Gain Block Mmic Amplifier, Dc - 5.0 Ghz
  34. HMC481ST89 - Sige Hbt Gain Block Mmic Amplifier, Dc - 5.0 Ghz
  35. HMC482ST89 - DC - 5 GHz, 19dB Gain, +36dBm OIP3, +24dBm P1dB The HMC482ST89 isA SiGe Heterojunction BipolarTransistor (HBT) Gain Block MMIC SMT amplifi ercovering DC to 5 GHz. Packaged in an industrystandard SOT89, the amplifi er can be used as acascadable 50 Ohm RF/IF gain stage as well as aLO or PA driver with up to +24 dBm output power.The HMC482ST89 offers 19 dB of gain withA +36dBm output IP3 at 1 GHz while requiring only 110mA fromA single positive supply. The Darlingtonfeedback pair results in reduced sensitiv
  36. HMC483MS8G - HIGH IP3 GaAs MMIC MIXER with INTEGRATED LO AMPLIFIER, 0.7 - 1.4 GHzThe HMC483MS8G & HMC483MS8GE are highdynamic range passive MMIC mixers with integratedLO amplifi ers in plastic surface mount 8 lead MiniSmall Outline Packages (MSOP) covering 0.7 to 1.4GHz. Excellent input IP3 performance of +33 dBm fordown conversion and +30 dBm for up conversion isprovided for 2.5G & 3G GSM/CDMA applications atan LO drive of 0 dBm. With an input 1 dB compressionof +24 dBm, the RF port will acceptA wide range ofinput sig
  37. HMC484MS8G - Gaas Mmic 10 Watt T/r Switch Dc - 3.0 Ghz
  38. HMC485MS8G - High Ip3 Gaas Mmic Mixer With Integrated Lo Amplifier, 1.7 - 2.2 Ghz
  39. HMC486 - 7 - 9 GHz, Power Amp, 26dB Gain, +40dBm OIP3, +33dBm P1dBThe HMC486 isA high dynamic range GaAs PHEMTMMIC 2 Watt Power Amplifi er which operates from 7to 9 GHz. This amplifi er die provides 26 dB of gain,+34 dBm of saturated power and 24% PAE fromA +7.0V supply voltage. Output IP3 is +40 dBm typical. TheRF I/Os are DC blocked and matched to 50 Ohms forease of integration into Multi-Chip-Modules (MCMs).All data is taken with the chip inA 50 ohm test fi xtureconnected via 0.025mm (1 mil) diameter wire bond
  40. HMC486LP5 - 7 - 9 GHz, 22dB Gain, +40dBm OIP3, +33dBm Psat The HMC486LP5 isA high dynamic range GaAsPHEMT MMIC 2 Watt Power Amplifi er housed ina leadless 5 x 5 mm surface mount package.Operating from 7 to 9 GHz, the amplifi er provides22 dB of gain, +33 dBm of saturated power and20% PAE fromA +7.0V supply voltage. OutputIP3 is +40 dBm typical. The RF I/Os are DCblocked and matched to 50 Ohms for ease ofuse. The HMC486LP5 eliminates the need forwire bonding, allowing use of surface mountmanufacturing techniques.
  41. HMC487LP5 - 9 - 12 GHz, 20dB Gain, +36dBm OIP3, +33dBm Psat The HMC487LP5 isA high dynamic range GaAsPHEMT MMIC 2 Watt Power Amplifi er housed ina leadless 5 x 5 mm surface mount package.Operating from 9 to 12 GHz, the amplifi erprovides 20 dB of gain, +33 dBm of saturatedpower and 20% PAE fromA +7.0V supplyvoltage. Output IP3 is +36 dBm typical. The RFI/Os are DC blocked and matched to 50 Ohmsfor ease of use. The HMC487LP5 eliminates theneed for wire bonding, allowing use of surfacemount manufacturing techniques.
  42. HMC488MS8G - Gaas Mmic Mixer W/ Integrated Lo Amplifier, 4.0 - 7.0 Ghz
  43. HMC490 - Gaas Phemt Mmic Low Noise High Ip3 Amplifier, 12 - 17 Ghz
  44. HMC490LP5 - Gaas Phemt Mmic Low Noise High Ip3 Amplifier, 12 - 16 Ghz
  45. HMC491LP3 - Gaas Mmic Low Noise Amplifier W/ Bypass Mode, 3.4 - 3.8 Ghz
  46. HMC492LP3 - Smt Gaas Hbt Mmic Divide-by-2, Dc - 18 Ghz
  47. HMC493LP3 - Smt Gaas Hbt Mmic Divide-by-4, Dc - 18 Ghz
  48. HMC494LP3 - Smt Gaas Hbt Mmic Divide-by-8, Dc - 18 Ghz
  49. HMC498 - Gaas Phemt Mmic Power Amplifier, 17 - 24 Ghz
  50. HMC498LC4 - 17 - 24 GHz, 22dB Gain, +26dBm Psat, +36dBm OIP3
  51. HMC499 - Gaas Phemt Mmic Medium Power Amplifier, 21 - 32 Ghz
  52. HMC499LC4 - 21 - 32 GHz, 15dB Gain, +33dBm OIP3, +24dBm Psat The HMC499LC4 isA high dynamic rangeGaAs PHEMT MMIC Medium Power Amplifi erhoused inA leadless “Pb free” RoHS CompliantSMT package. Operating from 21 to 32 GHz,the amplifi er provides 16 dB of gain, +24dBm of saturated power and 16% PAE froma +5.0V supply voltage. The RF I/Os are DCblocked and matched to 50 Ohms for ease ofuse. The HMC499LC4 eliminates the need forwire bonding, allowing use of surface mountmanufacturing techniques.
  53. HMC500LP3 - Gaas Hbt Vector Modulator 1.8 - 2.2 Ghz
  54. HMC500LP3E - GaAs HBT VECTOR MODULATOR 1.8 - 2.2 GHz
  55. HMC505LP4 - Mmic Vco Wl Buffer Amplifier, 6.8 - 7.4 Ghz
  56. HMC505LP4E - MMIC VCO wl BUFFER AMPLIFIER, 6.8 - 7.4 GHz
  57. HMC506LP4 - Mmic Vco W/ Buffer Amplifier, 7.8 - 8.7 Ghz
  58. HMC507LP5 - General DescriptionFeaturesFunctional DiagramThe HMC507LP5 & HMC507LP5E are GaAs InGaPHeterojunction Bipolar Transistor (HBT) MMICVCOs. The HMC507LP5 & HMC507LP5E integrateresonators, negative resistance devices, varactordiodes and featureA half frequency output. The VCO’sphase noise performance is excellent over temperature,shock, and process due to the oscillator’s monolithicstructure. Power output is +13.5 dBm typical fromA +5Vsupply. The voltage controlled oscillator is packagedinA leadless QFN 5x5 m
  59. HMC508LP5 - MMIC VCO w/ HALF FREQUENCY OUTPUT 7.3 - 8.2 GHzGeneral DescriptionFeaturesFunctional DiagramThe HMC508LP5 & HMC508LP5E are GaAs InGaPHeterojunction Bipolar Transistor (HBT) MMICVCOs. The HMC508LP5 & HMC508LP5E integrateresonators, negative resistance devices, varactordiodes and featureA half frequency output. The VCO’sphase noise performance is excellent over temperature,shock, and process due to the oscillator’smonolithic structure. Power output is +15.0 dBm typicalfromA +5V supply. The voltage controlle
  60. HMC508LP5E - MMIC VCO w/ HALF FREQUENCY OUTPUT 7.3 - 8.2 GHzGeneral DescriptionFeaturesFunctional DiagramThe HMC508LP5 & HMC508LP5E are GaAs InGaPHeterojunction Bipolar Transistor (HBT) MMICVCOs. The HMC508LP5 & HMC508LP5E integrateresonators, negative resistance devices, varactordiodes and featureA half frequency output. The VCO’sphase noise performance is excellent over temperature,shock, and process due to the oscillator’smonolithic structure. Power output is +15.0 dBm typicalfromA +5V supply. The voltage controlle
  61. HMC509LP5 - MMIC VCO w/ HALF FREQUENCY OUTPUT 7.8 - 8.8 GHzGeneral DescriptionFeaturesFunctional DiagramThe HMC509LP5 & HMC509LP5E are GaAs InGaPHeterojunction Bipolar Transistor (HBT) MMICVCOs. The HMC509LP5 & HMC509LP5E integrateresonators, negative resistance devices, varactordiodes and featureA half frequency output. The VCO’sphase noise performance is excellent over temperature,shock, and process due to the oscillator’s monolithicstructure. Power output is +13 dBm typical fromA +5Vsupply. The voltage controlled
  62. HMC509LP5E - MMIC VCO w/ HALF FREQUENCY OUTPUT 7.8 - 8.8 GHzGeneral DescriptionFeaturesFunctional DiagramThe HMC509LP5 & HMC509LP5E are GaAs InGaPHeterojunction Bipolar Transistor (HBT) MMICVCOs. The HMC509LP5 & HMC509LP5E integrateresonators, negative resistance devices, varactordiodes and featureA half frequency output. The VCO’sphase noise performance is excellent over temperature,shock, and process due to the oscillator’s monolithicstructure. Power output is +13 dBm typical fromA +5Vsupply. The voltage controlled
  63. HMC510LP5 - MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 8.45 - 9.55 GHz
  64. HMC510LP5E - MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 8.45 - 9.55 GHz
  65. HMC511LP5 - General DescriptionFeaturesFunctional DiagramThe HMC511LP5 & HMC511LP5E are GaAs InGaPHeterojunction Bipolar Transistor (HBT) MMIC VCOs.The HMC511LP5 & HMC511LP5E integrate resonators,negative resistance devices, varactor diodes andfeatureA half frequency output. The VCO’s phasenoise performance is excellent over temperature,shock, and process due to the oscillator’s monolithicstructure. Power output is +13 dBm typical fromA +5Vsupply. The voltage controlled oscillator is packagedinA leadless QFN 5x5 mm
  66. HMC511LP5E - General DescriptionFeaturesFunctional DiagramThe HMC511LP5 & HMC511LP5E are GaAs InGaPHeterojunction Bipolar Transistor (HBT) MMIC VCOs.The HMC511LP5 & HMC511LP5E integrate resonators,negative resistance devices, varactor diodes andfeatureA half frequency output. The VCO’s phasenoise performance is excellent over temperature,shock, and process due to the oscillator’s monolithicstructure. Power output is +13 dBm typical fromA +5Vsupply. The voltage controlled oscillator is packagedinA leadless QFN 5x5 mm
  67. HMC513LP5 - Mmic Vco W/ Half Frequency Output & Divide-by-4, 10.43 - 11.46 Ghz
  68. HMC513LP5E - MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 10.43 - 11.46 GHz
  69. HMC514LP5 - 11.3- 11.9 GHz, Div-by-4, +7dBm Po, -110 dBc/Hz Phase Noise@100kHz
  70. HMC515LP5 - MMIC VCO w/ HALF FREQUENCY OUTPUThe HMC515LP5 & HMC515LP5E are GaAs InGaPHeterojunction Bipolar Transistor (HBT) MMIC VCOs.The HMC515LP5 & HMC515LP5E integrate resonators,negative resistance devices, varactor diodesand feature half frequency and divide-by-4 outputs.The VCO’s phase noise performance is excellent overtemperature, shock, and process due to the oscillator’smonolithic structure. Power output is +10 dBm typicalfromA +5V supply voltage. The prescaler function canbe disabled to conserve current if
  71. HMC515LP5E - MMIC VCO w/ HALF FREQUENCY OUTPUThe HMC515LP5 & HMC515LP5E are GaAs InGaPHeterojunction Bipolar Transistor (HBT) MMIC VCOs.The HMC515LP5 & HMC515LP5E integrate resonators,negative resistance devices, varactor diodesand feature half frequency and divide-by-4 outputs.The VCO’s phase noise performance is excellent overtemperature, shock, and process due to the oscillator’smonolithic structure. Power output is +10 dBm typicalfromA +5V supply voltage. The prescaler function canbe disabled to conserve current if
  72. HMC516 - GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 7 - 17 GHzThe HMC516 chip isA high dynamic range GaAsPHEMT MMIC Low Noise Amplifi er (LNA) whichcovers the 7 to 17 GHz frequency range. TheHMC516 provides 20 dB of small signal gain,1.8 dB of noise fi gure and has an output IP3greater than +20 dBm. The chip can easily beintegrated into hybrid or MCM assemblies due toits small size. All data is tested with the chip in a50 Ohm test fi xture connected via 0.075mm (3mil) ribbon bonds of minimal length 0.31 mm (12mil). Two 0
  73. HMC516LC5 - Smt Phemt Low Noise Amplifier, 9 - 18 Ghz
  74. HMC517 - Low Noise (LNA)The HMC517 chip isA high dynamic range GaAsPHEMT MMIC Low Noise Amplifi er (LNA) whichcovers the 17 to 26 GHz frequency range. TheHMC517 provides 19 dB of small signal gain,2.2 dB of noise fi gure and has an output IP3greater than +24 dBm. The chip can easily beintegrated into hybrid or MCM assemblies due toits small size. All data is tested with the chip in a50 Ohm test fi xture connected via 0.075mm (3mil) ribbon bonds of minimal length 0.31 mm (12mil). Two 0.025 mm (1 mil) diameter bondwi
  75. HMC517LC4 - 17 - 26 GHz, 19dB Gain, +13dBm P1dB, 2.5dB NFGaAs PHEMT MMIC Low Noise Amplifi er (LNA)housed inA leadless “Pb free” RoHS compliantSMT package. The HMC517LC4 provides 19 dBof small signal gain, 2.5 dB of noise fi gure andhas an output IP3 of +23 dBm. The P1dB outputpower of +13 dBm enables the LNA to alsofunction asA LO driver for balanced, I/Q or imagereject mixers. The HMC517LC4 allows the use ofsurface mount manufacturing techniques.Noise Figure: 2.5 dBGain: 19 dBOIP3: +23 dBmSingle Supply: +3V @ 67 mA
  76. HMC518 - Low Noise (LNA) The HMC518 chip isA high dynamic range GaAsPHEMT MMIC Low Noise Amplifi er (LNA) whichcovers the 20 to 32 Ghz frequency range. TheHMC518 provides 15 dB of small signal gain,3.0 dB of noise fi gure and has an output IP3greater than 23 dBm. The chip can easily beintegrated into hybrid or MCM assemblies due toits small size. All data is tested with the chip in a50 Ohm test fi xture connected via 0.075mm (3mil) ribbon bonds of minimal length 0.31 mm (12mil). Two 0.025 mm (1 mil) diameter bondwi
  77. HMC519 - Low Noise (LNA) The HMC519 chip isA high dynamic range GaAsPHEMT MMIC Low Noise Amplifi er (LNA) whichcovers the 18 to 32 Ghz frequency range. TheHMC519 provides 15 dB of small signal gain,2.8 dB of noise fi gure and has an output IP3greater than 23 dBm. The chip can easily beintegrated into hybrid or MCM assemblies due toits small size. All data is tested with the chip in a50 Ohm test fi xture connected via 0.075 mm (3mil) ribbon bonds of minimal length 0.31 mm (12mil). Two 0.025 mm (1 mil) diameter bondw
  78. HMC520 - 6 - 10 GHz, 45dB LO/RF Iso, 40dB Image Rejection, +22dBm IIP3 The HMC520 isA compact I /Q MMIC mixer whichcan be used as either an Image Reject Mixer or aSingle Sideband Upconverter. The chip utilizes twostandard Hittite double balanced mixer cells and a90 degree hybrid fabricated inA GaAs MESFETprocess. All data shown below is taken with the chipmounted inA 50 Ohm test fi xture and includes theeffects of 1 mil diameter x 20 mil length bond wireson each port.A low frequency quadrature hybridwas used to
  79. HMC520LC4 - 6 - 10 GHz, 50dB LO/RF Iso, 40dB Image Rejection, +23dBm IIP3 The HMC520LC4 isA compact I /Q MMIC mixer ina leadless “Pb free” SMT package, which can beused as either an Image Reject Mixer orA SingleSideband Upconverter. The mixer utilizes twostandard Hittite double balanced mixer cells anda 90 degree hybrid fabricated inA GaAs MESFETprocess.A low frequency quadrature hybrid wasused to produceA 100 MHz USB IF output. Thisproduct isA much smaller alternative to hybridstyle Image Reject Mixers and Singl
  80. HMC521 - 8.5 - 13.5 GHz, 45dB LO/RF Iso, 40dB Image Rejection, +24dBm IIP3The HMC521 isA compact I /Q MMIC mixer whichcan be used as either an Image Reject Mixer or aSingle Sideband Upconverter. The chip utilizes twostandard Hittite double balanced mixer cells and a90 degree hybrid fabricated inA GaAs MESFETprocess. All data shown below is taken with the chipmounted inA 50 Ohm test fi xture and includes theeffects of 1 mil diameter x 20 mil length bond wireson each port.A low frequency quadrature hybridwas used
  81. HMC521LC4 - 8.5 - 13.5 GHz, 50dB LO/RF Iso, 38dB Image Rejection, +24dBm IIP3
  82. HMC522 - 11 - 16 GHz, 45dB LO/RF Iso, 35dB Image Rejection, +24dBm IIP3The HMC522 isA compact I /Q MMIC mixer whichcan be used as either an Image Reject Mixer or aSingle Sideband Upconverter. The chip utilizes twostandard Hittite double balanced mixer cells and a90 degree hybrid fabricated inA GaAs MESFETprocess. All data shown below is taken with the chipmounted inA 50 Ohm test fi xture and includes theeffects of 1 mil diameter x 20 mil length bond wireson each port.A low frequency quadrature hybridwas used to
  83. HMC522LC4 - 11 - 16 GHz, 45dB LO/RF Iso, 35dB Image Rejection, +24dBm IIP3The HMC522LC4 isA compact I /Q MMIC mixer ina leadless “Pb free” SMT package, which can beused as either an Image Reject Mixer orA SingleSideband Upconverter. The mixer utilizes twostandard Hittite double balanced mixer cells anda 90 degree hybrid fabricated inA GaAs MESFETprocess.A low frequency quadrature hybrid wasused to produceA 100 MHz USB IF output. Thisproduct isA much smaller alternative to hybridstyle Image Reject Mixers and Singl
  84. HMC523 - 15 - 23.6 GHz, 50dB LO/RF Iso, 27dB Image Rejection, +25dBm IIP3The HMC523 isA compact I /Q MMIC mixer whichcan be used as either an Image Reject Mixer or aSingle Sideband Upconverter. The chip utilizes twostandard Hittite double balanced mixer cells and a90 degree hybrid fabricated inA GaAs MESFETprocess. All data shown below is taken with the chipmounted inA 50 Ohm test fi xture and includes theeffects of 1 mil diameter x 20 mil length bond wireson each port.A low frequency quadrature hybridwas used t
  85. HMC523LC4 - 15 - 23.6 GHz, 47 dB LO/RF Iso, 25dB Image Rejection, +25dBm IIP3
  86. HMC524 - 22 - 32 GHz, 50dB LO/RF Iso, 23dB Image Rejection, +20dBm IIP3The HMC524 isA compact I /Q MMIC mixer whichcan be used as either an Image Reject Mixer or aSingle Sideband Upconverter. The chip utilizes twostandard Hittite double balanced mixer cells and a90 degree hybrid fabricated inA GaAs MESFETprocess. All data shown below is taken with the chipmounted inA 50 Ohm test fi xture and includes theeffects of 1 mil diameter x 20 mil length bond wireson each port.A low frequency quadrature hybridwas used to
  87. HMC525 - 4 - 8.5 GHz, 50dB LO/RF Iso, 40dB Image Rejection, +23dBm IIP3 The HMC525 isA compact I /Q MMIC mixer whichcan be used as either an Image Reject Mixer or aSingle Sideband Upconverter. The chip utilizes twostandard Hittite double balanced mixer cells and a90 degree hybrid fabricated inA GaAs MESFETprocess. All data shown below is taken with the chipmounted inA 50 Ohm test fi xture and includes theeffects of 1 mil diameter x 20 mil length bond wireson each port.A low frequency quadrature hybridwas used to
  88. HMC525LC4 - Gaas Mmic I/q Mixer 4 - 8.5 Ghz
  89. HMC526 - 6 - 10 GHz, 50dB LO/RF Iso, 40dB Image Rejection, +28dBm IIP3
  90. HMC526LC4 - 6 - 10 GHz, 50dB LO/RF Iso, 40dB Image Rejection, +28dBm IIP3
  91. HMC527 - 8.5 - 13.5 GHz, 50dB LO/RF Iso, 35dB Image Rejection, +28dBm IIP3
  92. HMC527LC4 - Gaas Mmic I/q Mixer 8.5 - 13.5 Ghz
  93. HMC528 - 11 - 16 GHz, 45dB LO/RF Iso, 35dB Image Rejection, +24dBm IIP3
  94. HMC528LC4 - 11 - 16 GHz, 45dB LO/RF Iso, 35dB Image Rejection, +26dBm IIP3
  95. HMC529LP5 - The HMC529LP5 & HMC529LP5E are GaAs InGaPHeterojunction Bipolar Transistor (HBT) MMIC VCOs.The HMC529LP5 & HMC529LP5E integrate resonators,negative resistance devices, varactor diodesand feature half frequency and divide-by-4 outputs.The VCO’s phase noise performance is excellent overtemperature, shock, and process due to the oscillator’smonolithic structure. Power output is +8 dBm typicalfromA +5V supply voltage. The prescaler function canbe disabled to conserve current if not required. Thevoltage control
  96. HMC531LP5 - MMIC VCO w/ HALF FREQUENCY OUTPUTThe HMC531LP5 & HMC531LP5E are GaAs InGaPHeterojunction Bipolar Transistor (HBT) MMIC VCOs.The HMC531LP5 & HMC531LP5E integrate resonators,negative resistance devices, varactor diodesand feature half frequency and divide-by-4 outputs.The VCO’s phase noise performance is excellent overtemperature, shock, and process due to the oscillator’smonolithic structure. Power output is +7 dBm typicalfromA +5V supply voltage. The prescaler function canbe disabled to conserve current if
  97. HMC533LP4 - VCO, 23.8 - 24.8 GHz, +12dBm Po, -95 dBc/Hz Phase Noise@100kHzThe HMC533LP4 & HMC533LP4E are GaAs InGaPHeterojunction Bipolar Transistor (HBT) MMICVCOs. The HMC533LP4 & HMC533LP4E integrateresonators, negative resistance devices, varactordiodes and featureA divide-by-16 output. The VCO’sphase noise performance is excellent over temperature,shock, and process due to the oscillator’s monolithicstructure. Power output is +12 dBm typical fromA +5Vsupply voltage. Prescaler function can be disabled toconserve c
  98. HMC533LP4E - VCO, 23.8 - 24.8 GHz, +12dBm Po, -95 dBc/Hz Phase Noise@100kHzThe HMC533LP4 & HMC533LP4E are GaAs InGaPHeterojunction Bipolar Transistor (HBT) MMICVCOs. The HMC533LP4 & HMC533LP4E integrateresonators, negative resistance devices, varactordiodes and featureA divide-by-16 output. The VCO’sphase noise performance is excellent over temperature,shock, and process due to the oscillator’s monolithicstructure. Power output is +12 dBm typical fromA +5Vsupply voltage. Prescaler function can be disabled toconserve c
  99. HMC534LP5 - MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 10.6 - 11.8 GHz
  100. HMC534LP5E - MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 10.6 - 11.8 GHz

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