HTML datasheet архив (поиск документации на электронные компоненты) Поиск даташита (1.687.043 компонентов)
Где искать

Datasheet: 4AK27 (Hitachi Semiconductor)

Silicon N Channel Mos Fet High Speed Power Switching

 

Скачать: PDF   ZIP
Hitachi Semiconductor
4AK27
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-728 (Z)
1st. Edition
January 1999
Features
Low on-resistance
R
DS(on)
0.15
,
V
GS
= 10V, I
D
= 3.0A
4V gate drive devices.
High density mounting
Outline
SP-10
1, 10. Source
2, 4, 6, 8. Gate
3, 5, 7, 9. Drain
1
2
3
4 5
6
7 8
9
10
G
3
S
G
5
G
7
G
9
S
2
1
D
D
D
D
4
6
8
10
4AK27
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
60
V
Gate to source voltage
V
GSS
20
V
Drain current
I
D
5
A
Drain peak current
I
D(pulse)
Note1
20
A
Body-drain diode reverse drain current
I
DR
5
A
Avalanche current
I
AP
5
A
Avalanche energy1
E
AR
2.1
mJ
Channel dissipation
Pch(Tc=25C)
Note2
28
W
Channel dissipation
Pch
Note2
4
W
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Note:
1. PW
10
s, duty cycle
1 %
2. 4 devices poeration
3. Value at Tch=25C, Rg
50
4AK27
3
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V
(BR)DSS
60
--
--
V
I
D
= 10mA, V
GS
= 0
Gate to source breakdown voltage
V
(BR)GSS
20
--
--
V
I
G
=
100
A, V
DS
= 0
Zero gate voltege drain current
I
DSS
--
--
100
A
V
DS
= 50 V, V
GS
= 0
Gate to source leak current
I
GSS
--
--
10
A
V
GS
=
16V, V
DS
= 0
Gate to source cutoff voltage
V
GS(off)
1.0
--
2.25
V
I
D
= 1mA, V
DS
= 10V
Static drain to source on state resistance
R
DS(on)
--
0.12
0.15
I
D
= 3A, V
GS
= 10V
Note4
Static drain to source on state resistance
R
DS(on)
--
0.15
0.2
I
D
= 3A, V
GS
= 4V
Note4
Forward transfer admittance
|y
fs
|
3.0
5.5
--
S
I
D
= 3A, V
DS
= 10V
Note4
Input capacitance
Ciss
--
390
--
pF
V
DS
= 10V
Output capacitance
Coss
--
190
--
pF
V
GS
= 0
Reverse transfer capacitance
Crss
--
45
--
pF
f = 1MHz
Turn-on delay time
t
d(on)
--
10
--
ns
V
GS
= 10V, I
D
= 3A
Rise time
t
r
--
42
--
ns
R
L
= 10
Turn-off delay time
t
d(off)
--
90
--
ns
Fall time
t
f
--
55
--
ns
Bodydrain diode forward voltage
V
DF
--
1.0
--
V
I
F
= 5A, V
GS
= 0
Bodydrain diode reverse recovery time
t
rr
--
60
--
ns
I
F
= 5A, V
GS
= 0
diF/ dt =50A/
s
Note:
4. Pulse test
4AK27
4
Main Characteristics
6
0
100
50
150
Maximum Channel Dissipation Curve
Channel Dissipation Pch (W)
Ambient Temperature Tc (C)
4
2
Condition : Channel Dissipation of
each die is identical
4 Device Operation
3 Device Operation
2 Device Operation
1 Device Operation
30
0
100
50
150
Maximum Channel Dissipation Curve
Channel Dissipation Pch (W)
Case Temperature Tc (C)
20
10
Condition : Channel Dissipation of
each die is identical
4 Device Operation
3 Device Operation
2 Device
Operation
1 Device
Operation
10
8
6
4
2
0
2
4
6
8
10
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Pulse Test
3 V
Typical Output Characteristics
V = 2 V
GS
2.5 V
10 V
5 V
4 V
3.5 V
10
8
6
4
2
0
1
2
3
4
5
Gate to Source Voltage V (V)
GS
Drain Current I (A)
D
V = 10 V
Pulse Test
DS
Typical Transfer Characteristics
Tc = 25 C
25 C
75 C
4AK27
5
1.0
0.8
0.6
0.4
0.2
0
2
4
6
8
10
Gate to Source Voltage V (V)
GS
Pulse Test
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
I = 1 A
D
5 A
2 A
V (V)
DS(on)
Drain to Source Sasuration Voltage
Drain Current I (A)
D
Drain to Source On State Resistance
R ( )
DS(on)
0.1
Static Drain to Source State Resistance
vs. Drain Current
1
0.2
0.5
0.1
0.05
0.2
0.5
1
2
5
10 20
50
4 V
V = 10 V
GS
Pulse Test
0.5
0.4
0.3
0.2
0.1
40
0
40
80
120
160
Case Temperature Tc (C)
0
R ( )
DS(on)
Static Drain to Source on State Resistance
Pulse Test
10 V
V = 4 V
GS
Static Drain to Source on State Resistance
vs. Temperature
1 A
2 A
1 A
2 A
I = 5 A
D
5 A
0.1
Forward Transfer Admittance |yfs| (S)
Drain Current I (A)
D
Forward Transfer Admittance vs.
Drain Current
20
10
5
2
1
0.5
0.2
0.5
1
2
5
10
Tc = 25 C
25 C
75 C
DS
V = 10 V
Pulse Test
4AK27
6
5
10
500
200
100
50
20
Reverse Drain Current I (A)
DR
Reverse Recovery Time trr (ns)
Body to Drain Diode Reverse
Recovery Time
0.1
0.2
0.5
1
2
5
10
di/dt = 50 A/
s, Ta = 25
C
V = 0, Pulse Test
GS
10
0
Capacitance C (pF)
Drain to Source Voltage V (V)
DS
Typical Capacitance vs.
Drain to Source Voltage
1000
200
500
100
20
50
10
20
30
40
50
Ciss
Coss
Crss
V = 0
f = 1 MHz
GS
100
80
60
40
20
0
Gate Charge Qg (nc)
Drain to Source Voltage V (V)
DS
20
16
12
8
4
0
Gate to Source Voltage V (V)
GS
Dynamic Input Characteristics
4
8
12
16
20
V
GS
DS
V
V = 50 V
25 V
10 V
DD
V = 10 V
25 V
50 V
DD
I = 5 A
D
Drain Current I (A)
D
Switching Time t (ns)
0.1
Switching Characteristics
500
200
100
20
10
5
50
0.2
0.5
1
2
5
10
V = 10 V, V = 30 V
PW = 5 s, duty < 1 %
GS
DD
t f
r
t
d(on)
t
d(off)
t
4AK27
7
10
8
6
4
2
0
0.4
0.8
1.2
1.6
2.0
Drain to Source Voltage V (V)
DS
Pulse Test
Reverse Drain Current I (A)
DR
V = 0, 5 V
GS
10 V
5 V
Reverse Drain Current vs.
Source to Drain Voltage
2.5
2
1.5
1
0.5
Channel Temperature Tch (C)
Repetive Avalanche Energy E (mJ)
AR
Maximun Avalanche Energy vs.
Channel Temperature Derating
25
50
75
100
125
150
0
I = 5 A
V = 25 V
duty < 0.1 %
Rg > 50
AP
DD
D. U. T
Rg
I
Monitor
AP
V
Monitor
DS
V
DD
50
Vin
15 V
0
I
D
V
DS
I
AP
V
(BR)DSS
L
V
DD
E =
L I
2
1
V
V
V
AR
AP
DSS
DSS
DD
2
Avalanche Test Circuit and Waveform
4AK27
8
Package Dimensions
Unit: mm
26.5 0.3
1.82 2.54
1.4
0.55
1.5 0.2
0.55 0.1
4.0 0.2
10.0 0.3
10.5 0.5
2.5
1
2
3
4
5
6
7
8
9
10
+0.1
0.06
Hitachi Code
JEDEC
EIAJ
SP-10
--
--
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party's rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Fax: 535-1533
URL
NorthAmerica
: http:semiconductor.hitachi.com/
Europe
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan)
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong)
: http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Hitachi Europe GmbH
Electronic components Group
Dornacher Strae 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
For further information write to:
© 2018 • ChipFind
Контакты
Главная страница