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Datasheet: 4AK26 (Hitachi Semiconductor)

Silicon N-channel Power Mos Fet Array

 

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Hitachi Semiconductor
4AK26
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
Low on-resistance
R
DS(on)
0.06 , V
GS
= 10 V, I
D
= 5 A
R
DS(on)
0.075 , V
GS
= 4 V, I
D
= 5 A
Capable of 4 V gate drive
Low drive current
High speed switching
High density mounting
Suitable for motor driver and solenoid driver and lamp driver
Outline
1 2
3 4
5 6
7 8
9
1011
12
SP-12
1
G
S 3
5
G
8
G
12
G
2
D
4
D
9
D
11
D
S 6
S 7
S 10
1, 5, 8, 12. Gate
2, 4, 9, 11. Drain
3, 6, 7, 10. Source
4AK26
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
60
V
Gate to source voltage
V
GSS
20
V
Drain current
I
D
10
A
Drain peak current
I
D(pulse)
*
1
32
A
Body to drain diode reverse drain current
I
DR
10
A
Channel dissipation
Pch (Tc = 25
C)*
2
28
W
Channel dissipation
Pch*
2
4
W
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Notes: 1. PW
10
s, duty cycle
1%
2. 4 Devices operation
4AK26
3
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
60
--
--
V
I
D
= 10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
20
--
--
V
I
G
=
100
A, V
DS
= 0
Gate to source leak current
I
GSS
--
--
10
A
V
GS
=
16 V, V
DS
= 0
Zero gate voltage drain current I
DSS
--
--
250
A
V
DS
= 50 V, V
GS
= 0
Gate to source cutoff voltage
V
GS(off)
1.0
--
2.0
V
I
D
= 1 mA, V
DS
= 10 V
Static drain to source on state
resistance
R
DS(on)
--
0.045
0.06
I
D
= 5 A
V
GS
= 10 V*
1
--
0.056
0.075
I
D
= 5 A
V
GS
= 4 V*
1
Forward transfer admittance
|y
fs
|
10
12
--
S
I
D
= 5 A
V
DS
= 10 V*
1
Input capacitance
Ciss
--
1400
--
pF
V
DS
= 10 V
Output capacitance
Coss
--
720
--
pF
V
GS
= 0
Reverse transfer capacitance
Crss
--
220
--
pF
f = 1 MHz
Turn-on delay time
t
d(on)
--
15
--
ns
I
D
= 10 A
Rise time
t
r
--
95
--
ns
V
GS
= 10 V
Turn-off delay time
t
d(off)
--
300
--
ns
R
L
= 3
Fall time
t
f
--
170
--
ns
Body to drain diode forward
voltage
V
DF
--
1.05
--
V
I
F
= 10 A, V
GS
= 0
Body to drain diode reverse
recovery time
t
rr
--
110
--
s
I
F
= 10 A, V
GS
= 0,
dIF/dt = 50 A/
s
Note:
1. Pulse Test
4AK26
4
6
5
4
3
2
1
0
Channel Dissipation Pch (W)
50
100
150
125
Ambient Temperature Ta (C)
75
25
4 Device Operation
3 Device Operation
2 Device Operation
1 Device Operation
each die is idetical
Condition : Channel dissipation of
Maximum Channel Dissipation Curve
30
20
10
0
Channel Dissipation Pch (W)
50
100
150
125
Case Temperature Tc (C)
75
25
each die is idetical
Condition : Channel dissipation of
4 Device Operation
3 Device Operation
2 Device Operation
1 Device Operation
Maximum Channel Dissipation Curve
Typical Output Characteristics
6
Drain to Source Voltage V
DS
(V)
8
4
2
10
Drain Current I
D
(A)
0
10
20
30
40
0
50
V
GS
= 2.5 V
Pulse Test
10 V
8 V
6 V
3.5 V
3.0 V
4.0 V
4.5 V
Typical Transfer Characteristics
3
Gate to Source Voltage V
GS
(V)
4
2
1
0
5
10
20
30
40
50
0
Drain Current I
D
(A)
T
C
= 25C
75C
V
DS
= 10 V
Pulse Test
25C
4AK26
5
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
6
Gate to Source Voltage V
GS
(V)
8
4
2
0
10
2
3
4
5
0
1
Drain to Source Saturation Voltage
V
DS (on)
(V)
Pulse Test
I
D
= 50 A
10 A
20 A
10
Drain Current I
D
(A)
20
5
2
100
0.02
0.05
0.1
0.2
0.5
1
0.01
0.005
50
Static Drain to Source on State
Resistance vs. Drain Current
Static Drain to Source on Static Resistance
R
DS
(on) (
)
V
GS
= 4 V
10 V
Pulse Test
80
Case Temperature T
C
(C)
120
40
0
0.02
0.04
0.06
0.08
0.10
40
0
160
Static Drain to Source on State
Resistance vs. Temperature
Static Drain to Source on State Resistance
R
DS (on)
(
)
I
D
= 20 A
20 A
Pulse Test
V
GS
= 4 V
V
GS
= 10 V
10 A
5 A
10 A
5 A
Forward Transfer Admittance
vs. Drain Current
100
50
20
10
5
2
1
0.5
1.0
2
5
10
50
Drain Current I
D
(A)
20
Forward Transfer Admittance
yfs
(S)
T
C
= 25C
V
DS
= 10 V
Pulse Test
25C
75C
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