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Datasheet: 4AC12 (Hitachi Semiconductor)

Silicon Npn Epitaxial

 

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Hitachi Semiconductor
4AC12
Silicon NPN Epitaxial
Application
Low frequency power amplifier
Outline
SP-10
1, 10 Emitter
2, 4, 6, 8 Base
3, 5, 7, 9 Collector
1
10
2
1
6
4
8
3
7
5
9
10
I
D
I
D
I
D
I
D
4AC12
2
Absolute Maximum Ratings (for each device, Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
27
V
Collector to emitter voltage
V
CEO
27
V
Emitter to base voltage
V
EBO
7
V
Collector current
I
C
2
A
Collector peak current
I
C(peak)
4
A
Diode current
I
D
2
A
Collector power dissipation
P
C
*
1
4
W
P
C
*
1
(T
C
= 25
C)
28
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Note:
1. 4 devices operation.
Electrical Characteristics (for each device, Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown
voltage
V
(BR)CBO
27
--
--
V
I
C
= 1 mA, I
E
= 0
Collector to emitter sustain
voltage
V
CEO(SUS)
28
--
36
V
I
C
= 1 A, L = 20 mH, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
7
--
--
V
I
E
= 5 mA, I
C
= 0
Collector cutoff current
I
CBO
--
--
10
A
V
CB
= 20 V, I
E
= 0
I
CEO
--
--
10
V
CE
= 20 V, R
BE
=
DC current transfer ratio
h
FE
7000
--
30000
V
CE
= 2 V, I
C
= 0.5 A
h
FE
2000
--
--
V
CE
= 2 V, I
C
= 2 A*
1
Collector to emitter saturation
voltage
V
CE(sat)
--
--
1.5
V
I
C
= 2 A, I
B
= 2 mA*
1
Base to emitter saturation
voltage
V
BE(sat)
--
--
2.0
V
I
C
= 2 A, I
B
= 2 mA*
1
C to E diode forward current
V
D
--
--
3.5
V
I
D
= 2 A
Note:
1. Pulse test.
4AC12
3
Maximum Collector Dissipation Curve
6
4
2
0
50
100
150
Ambient temperature Ta (
C)
Collector power dissipation P
C
(W)
4 device operation
3 device operation
2 device operation
1 device operation
Note: Collector power dissipation of each devices
is identical.
Maximum Collector Dissipation Curve
30
20
10
0
50
100
150
Case temperature T
C
(
C)
Collector power dissipation P
C
(W)
4 device operation
3 device operation
2 device operation
1 device operation
10
3.0
1.0
0.3
Collector current I
C
(A)
0.1
0.03
0.01
1.0
50
10
0.5
2
20
5
Collector to emitter voltage V
CE
(V)
Ta = 25
C
1 shot pulse
i
C(peak)
I
C(max)
DC Operation
(T
C
= 25
C)
PW = 10 ms
1 ms
Area of Safe Operation
T
C
= 25
C
I
B
= 0
30
A
40
50
60
90
70
2.0
1.6
1.2
0.8
0.4
0
1
4
3
2
5
Collector current I
C
(A)
Collector to emitter voltage V
CE
(V)
Typical Output Characteristics
80
4AC12
4
100,000
30,000
10,000
3,000
1,000
300
100
0.03
0.1
1.0
DC current transfer ratio h
FE
0.3
3.0
Collector current I
C
(A)
V
CE
= 2 V
DC Current Transfer Ratio
vs. Collector Current
25
C
Ta = 75
C
25
C
Collector to Emitter Saturatiion Voltage
vs. Collector Current
10
3
1.0
0.3
0.1
Collector to emitter saturation voltage V
CE(sat)
(V)
0.03
0.3
Collector current I
C
(A)
1.0
0.1
3.0
Ta = 25
C
I
C
= 1000 I
B
25
C
75
C
Base to Emitter Saturatiion Voltage
vs. Collector Current
10
3.0
1.0
0.3
0.1
Base to emitter saturation voltage V
BE(sat)
(V)
0.03
0.3
Collector current I
C
(A)
1.0
0.1
3.0
Ta = 25
C
I
C
= 1000 I
B
25
C
75
C
V
CE
= 2 V
Typical Transfer Characteristics
Collector current I
C
(A)
2.0
1.6
1.2
0.8
0.4
0
0.4
0.8
Base to emitter voltage V
BE
(V)
1.2
2.0
1.6
25
C
25
C
Ta = 75
C
4AC12
5
I
C
= 1 mA
Zener Voltage vs. Case Temperature
Zener voltage V
Z
(V)
60
50
40
30
20
10
0
25
75
125
Case temperature T
C
(
C)
50
100
Transient Thermal Resistance
10
1.0
0.02
0.1
0.01
0.1
1.0
10 (s)
0.01
0.1
1.0
10 (ms)
Time t
Thermal resistance
j-c
(
C/W)
T
C
= 25
C
10 ms to 10 s
10
s to 10 ms
26.5
0.3
1.82 2.54
1.4
1.2
0.55
1.5
0.2
0.55
0.1
4.0
0.2
10.0
0.3
10.5
0.5
2.5
1
2
3
4
5
6
7
8
9
10
1
10
Pin No.
Electrode
Note: B:
C:
E:
Base
Collector
Emitter
1
E
2
B
3
C
4
B
5
C
6
B
7
C
8
B
9
C
10
E
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
SP-10
--
--
2.9 g
Unit: mm
26.5
0.3
1.82 2.54
1.4
0.55
1.5
0.2
0.55
0.1
4.0
0.2
10.0
0.3
10.5
0.5
2.5
1
2
3
4
5
6
7
8
9
10
+0.1
0.06
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party's rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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Singapore 049318
Tel: 535-2100
Fax: 535-1533
URL
NorthAmerica
: http:semiconductor.hitachi.com/
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: http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
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3F, Hung Kuo Building. No.167,
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Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
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Fax: <44> (1628) 778322
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Fax: <49> (89) 9 29 30 00
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(America) Inc.
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For further information write to:
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