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Datasheet: GPTP2165 (Green Power Semiconductors)

 

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GPTP2165
PHASE CONTROLLED SCR
High reliability operation
DC power supply
AC drives
VOLTAGE UP TO
1600 V
AVERAGE CURRENT
1650 A
SURGE CURRENT
27 kA
BLOCKING CHARACTERISTICS
Characteristic
Conditions
V
RRM
Repetitive peak reverse voltage
1600 V
V
RSM
Non-repetitive peak reverse voltage
1700 V
V
DRM
Repetitive peak off-state voltage
1600 V
I
DRM
Repetitive peak off-state current, max.
V
DRM
, single phase, half wave, Tj = Tjmax
50 mA
I
RRM
Repetitive peak reverse current, max.
V
RRM
, single phase, half wave, Tj = Tjmax
50 mA
ON-STATE CHARACTERISTICS
I
T(AV)
Average on-state current
Sine wave,180 conduction, Th = 55 C
1650 A
I
T(RMS)
R.M.S. on-state current
Sine wave,180 conduction, Th = 55 C
2592 A
I
TSM
Surge on-state current
Non rep. half sine wave, 50 Hz, V
R
= 0 V, T
j
= T
jmax
27 kA
It
I t for fusing coordination
3920 kAs
V
T(TO)
Threshold voltage
T
j
= T
jmax
0.82 V
r
T
On-state slope resistance
T
j
= T
jmax
0.23 m
V
TM
Peak on-state voltage, max
On-state current I
T
= 2900 A , Tj = 25 C
1.45 V
I
H
Holding current, max
T
j
= 25 C
300 mA
I
L
Latching current, typ
T
j
= 25 C
700 mA
TRIGGERING CHARACTERISTICS
V
GT
Gate trigger voltage
T
j
= 25 C, V
D
= 5 V
3.5 V
I
GT
Gate trigger current
T
j
= 25 C, V
D
= 5 V
300 mA
V
GD
Non-trigger voltage
V
D
= 67% V
RRM
, T
j
= T
jmax
0.25 V
P
GM
Peak gate power dissipation
Pulse width 100 s
150 W
P
G(AV)
Average gate power dissipation
2 W
I
FGM
Peak gate current
10 A
V
FGM
Peak gate voltage (forward)
30 V
V
RGM
Peak gate voltage (reverse)
5 V
SWITCHING CHARACTERISTICS
di/dt
Critical rate of rise of on-state current
T
j
= T
jmax
200 A/s
dV/dt
Critical rate of rise of off-state voltage
T
j
= T
jmax
500 V/s
t
q
Turn-off time, typ
T
j
= T
jmax
, I
T
= 1000 A, di/dt = -20 A/s
s
VR = 50 V, VD = 67% VDRM, dV/dt = 20 V/s
THERMAL AND MECHANICAL CHARACTERISTICS
R
th(j-c)
Thermal resistance (junction to case)
Double side cooled
0.018 C/W
R
th(c-h)
Thermal resistance (case to heatsink)
Double side cooled
0.006 C/W
T
jmax
Max operating junction temperature
125 C
T
stg
Storage temperature
-40 / 125 C
F
Clamping force 10%
22 kN
Mass
500 g
Document GPTP2165T001
Value
Green Power Solutions srl
Via Greto di Cornigliano 6R - 16152 Genova , Italy
Phone: +39-010-659 1869
Fax: +39-010-659 1870
Web: www.gpsemi.it
E-mail: info@gpsemi.it
Green Power
Semiconductors
PHASE CONTROLLED SCR
GPTP2165
Document GPTP2165T001
Maximum surge current
d.s. cooled
0
5
10
15
20
25
30
1
10
100
Number of cycle current pulses [n]
I
TSM
[A]
On-state voltage drop
0
500
1000
1500
2000
2500
3000
3500
0
0.5
1
1.5
2
V
T
[V]
I
T
[A]
T
j
=T
jmax
Green Power
Semiconductors
Thermal impedance (j-c)
0
0.005
0.01
0.015
0.02
0.001
0.01
0.1
1
10
100
Time [s]
Z
TH(j-c)
[C / W]
Current rating - sine wave
50
60
70
80
90
100
110
120
130
0
400
800
1200
1600
I
T
[A]
Heatsink temperature [C]
180
90
120
60
30
Power loss - sine wave
0
500
1000
1500
2000
2500
3000
0
400
800
1200
1600
I
T
[A]
P
F
[W]
180
120
90
60
30
I
n the interest of product improvement Green Power Solutions reserves the right to change any specification given in this data sheet
without notice.
On-state voltage drop
0
500
1000
1500
2000
2500
3000
3500
0.5
1
1.5
2
V
T
[V]
I
T
[A]
T
j
=T
jmax
dimensions mm
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