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Datasheet: FLC097WF (Eudyna Devices Inc.)

C-band Power Gaas Fet

 

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Eudyna Devices Inc.
1
Edition 1.1
July 1999
FLC097WF
C-Band Power GaAs FET
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
+15
-5
4.16
-65 to +175
175
Tc = 25C
V
V
W
C
C
PT
Tstg
Tch
Condition
Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25C)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed +10 volts.
2. The forward and reverse gate currents should not exceed 4.8 and -0.5 mA respectively with
gate resistance of 400.
3. The operating channel temperature (Tch) should not exceed 145C.
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Power-added Efficiency
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Symbol
IDSS
-
300
450
-
150
-
-1.0
-2.0
-3.5
-5
-
-
7.5
8.5
-
-
35
-
27.5
28.8
-
VDS = 5V, IDS =15mA
VDS = 5V, IDS = 200mA
VDS = 5V, VGS = 0V
IGS = -15A
Channel to Case
VDS = 10V,
IDS = 0.6 IDSS (Typ.),
f = 6 GHz
mA
mS
V
dB
%
dBm
V
gm
Vp
VGSO
P1dB
G1dB
add
Thermal Resistance
-
25
36
C/W
Rth
Test Conditions
Unit
Limit
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C)
G.C.P.: Gain Compression Point
CASE STYLE: WF
DESCRIPTION
The FLC097WF is a power GaAs FET that is designed for general
purpose applications in the C-Band frequency range as it provides
superior power, gain, and efficiency.
Fujitsu's stringent Quality Assurance Program assures the highest
reliability and consistent performance.
FEATURES
High Output Power: P1dB = 28.8dBm (Typ.)
High Gain: G1dB = 8.5dB(Typ.)
High PAE: add = 35%(Typ.)
Proven Reliability
Hermetic Metal/Ceramic Package
2
FLC097WF
C-Band Power GaAs FET
POWER DERATING CURVE
DRAIN CURRENT
vs. DRAIN-SOURCE VOLTAGE
OUTPUT POWER
& IM3 vs. INPUT POWER
2
1
4
5
3
18
16
14
22
24
20
-30
-40
-50
-10
-20
0
50
100 150 200
2
0
4
6
8
10
Case Temperature (C)
Drain-Source Voltage (V)
6
8
10 12 14
Input Power (S.C.L.) (dBm)
S.C.L.: Single Carrier Level
Total Power Dissipation (W)
Output Power (S.C.L.) (dBm)
100
300
200
Drain Current (mA)
IM
3
(dBc)
VGS =0V
-0.5V
Pout
IM3
-1.5V
-2.0V
-1.0V
VDS=10V
f1 = 6.0 GHz
f2 = 6.01GHz
2-tone Test
OUTPUT POWER vs. INPUT POWER
VDS=10V
IDS 0.6 IDSS
10 12 14 16 18 20
Input Power (dBm)
26
28
24
22
20
18
16
30
40
50
20
10
Output Power (dBm)
add
6 GHz
4 GHz
4 GHz
6 GHz
Pout
add
(%)
add
(%)
P1dB & add vs. VDS
f=6GHz
IDS 0.6 IDSS
8
9
10
Drain-Source Voltage (V)
29
28
27
40
30
50
P
1dB
(dBm)
add
P1dB
3
FLC097WF
C-Band Power GaAs FET
S-PARAMETERS
VDS = 10V, IDS = 180mA
FREQUENCY
S11
S21
S12
S22
(MHZ)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
500
.950
-61.4
10.087 140.8
.022
55.5
.399
-31.1
2000
.857
-151.4
4.537 76.8
.038
7.0
.344 -83.9
3000
.841
-176.1
3.114 52.9
.039
-6.0
.392 -102.2
4000
.832
166.3
2.398 33.0
.039
-13.1
.445 -115.6
5000
.825
148.7
1.978 13.6
.040
-19.6
.480 -127.7
6000
.820
129.8
1.681 -6.3
.042
-26.4
.506 -142.2
7000
.817
112.1
1.418 -25.9
.043
-34.9
.534 -158.6
8000
.807
97.6
1.212 -43.2
.045
-36.2
.571 -172.0
9000
.804
83.6
1.080 -59.4
.050
-40.8
.603 176.6
10000
.799
67.2
1.011 -76.6
.059
-45.9
.620 165.2
11000
.794
47.0
.954 -96.5
.071
-55.4
.629 149.3
12000
.784
26.9
.864 -117.0
.082
-66.9
.649
130.8
+j250
+j100
+j50
+j25
+j10
0
-j10
-j25
-j50
-j100
-j250
S11
S22
180
+90
0
-90
S21
S12
SCALE FOR |S21|
SCALE FOR |S
12
|
3
3
5
5
8
8
9
9
4
4
10
10
11
11
12
12
6
6
7
7
250
100
10
25
50
2GHz
2GHz
3
4
2
1
.08
.06
.04
.02
5
5
8
9
9
4
3
3
10
10
11
11
12
12
6
7
7
2GHz
2GHz
Download S-Parameters, click here
4
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS, LTD.
Compound Semiconductor Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
1998 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0598M200
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs)
which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
CAUTION
Do not put these products into the mouth.
Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
FLC097WF
C-Band Power GaAs FET
1.60.01
(0.063)
0.6
(0.024)
6.10.1
(0.240)
1.0 Min.
(0.039)
1.0 Min.
(0.039)
2.5 Max.
(0.098)
0.8
0.1
(0.031)
2.5
0.15
(0.098)
Case Style "WF"
Metal-Ceramic Hermetic Package
Unit: mm(inches)
1. Gate
2. Source (Flange)
3. Drain
4. Source (Flange)
0.10.05
(0.004)
1
2
3
8.50.2
(0.335)
2.5
(0.098)
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