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Datasheet: F0100612B (Eudyna Devices Inc.)

10gb/s Receiver Transimpedance Amplifier

 

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Eudyna Devices Inc.
Features
Low voltage of +3.3V single power supply
1.5k
high transimpedance
Typical 9GHz broad bandwidth
27dB high gain
Over 20dB wide dynamic range
Differential output
Applications
Preamplifier of an optical receiver circuit for OC-192/STM-64(10Gb/
s)
Functional Description
The F0100612B is a stable GaAs integrated transimpedance amplifier capable of 27dB
gain at a typical 9GHz 3dB-cutoff-frequency, making it ideally suited for a 10Gb/s optical
receiver circuit, for example, OC-192/STM-64, instrumentation, and measurement applica-
tions. The integrated feedback loop design provides broad bandwidth and stable operation.
The F0100612B typically specifies a high transimpedance of 1.5k

(RL=50
) with a wide
dynamic range of over 20dB. Furthermore, it can operate with a supply voltage of single
+3.3V.
Only chip-shipment is available for all product lineups of GaAs transimpedance amplifiers,
because the packaged preamplifier cannot operate with the maximum performance owing to
parasitic capacitance of the package.
F0100612B
10Gb/s Receiver
Transimpedance Amplifier
03.5.27
Preliminary

F0100612B 10Gb/s Transimpedance Amplifier
Absolute Maximum Ratings
T
a
=25
C, unless specified
Parameter Symbol Value Units
Supply Voltage
V
DD
-0.5 to +5.0V
V
Supply Current
I
DD
100
mA
Ambient Operating Temperature
T
a
-40 to +90
C
Storage Temperature
T
stg
-55 to +125
C
Recommended Operating Conditions
T
a
=25
C, V
DD
=+3.3V unless specified
Value
Parameter Symbol
MIN. TYP. MAX.
Unit
Supply Voltage
V
DD
3.10 3.30 3.50
V
Ambient Operating Temperature
T
a
0 25
70
C
Photodiode Capacitance
C
PD
0.20
0.225
0.25 pF
Input bond wire inductance
L
IN
0.2 0.4 0.6 nH
Electrical Characteristics
T
a
=25
C, V
DD
=+3.3V unless specified
Value
Parameters Symbol
Test
Conditions
MIN. TYP. MAX
Units
Supply Current
I
DD
DC -
55
-
mA
Gain S
21
PIN=-
50dBm f=1GHz,
RL=50
- 27 - dB
-3dB High Frequency Cut-off F
Ch
PIN=-
50dBm
RL=50
- 9.0 - GHz
Input Impedance
R
I
f
=1GHz -
75
-
Transimpedance Z
T
f
=1GHz -
1.5
-
k
Output Voltage
V
O
DC -
2.8
-
V
Input Voltage
V
I
DC -
1.0
-
V
-3dB Low Frequency Cut-off
F
Cl
Cout=1000pF
60
kHz

F0100612B 10Gb/s Transimpedance Amplifier
Block Diagram
Die Pad Description
V
DD
Supply
Voltage
GND Ground
IN Input
OUTP Output
(positive)
OUTN
Output (negative)
CAP
Connect outer
Capacitance
CAP
Cout
OUTP
OUTN
Buffer
Level Shift
GND
V
DD
IN

F0100612B 10Gb/s Transimpedance Amplifier
Die Pad Assignment
No.
Symbol Center Coordinates (um)
No.
Symbol
Center Coordinates (um)
1 GND
(70,177.5)
10 OUTP
(685,780)
2 V
DD
(275,70)
11
CAP (70,780)
3 V
DD
(490,70)
12
GND (70,602.5)
4 OUTN
(685,70)
13 IN
(70,425)
5 GND
(910,92.5)
6 OUTN
(910,265)
7 GND
(910,425)
8 OUTP
(910,585)
O
(0,0)
9 GND
(910,757.5)
A
(980,850)
920um
1050um
1
2
3
4
5
6
7
8
9
10
11
12
13
A
O

F0100612B 10Gb/s Transimpedance Amplifier
Test Circuits
1) AC Characteristics
2) Sensitivity Characteristics
Pin=-
50dBm
f=130MHz
20GHz
Network Analyzer
50
50
DUT
V
DD
OUTP
OUTN
Prober
IN
50
E/O
Converter
Pulse
Pattern
Generator
Optical
Attenuator
5V
5V
V
DD
V
PD
Post Amp.
0.022uF
0.022uF
0.022uF
Bit Error
Rate Tester
CLK
PD DUT
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