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Datasheet: F0100406B (Eudyna Devices Inc.)

3.3v 1.25gbit/s Nrz Receiver Transimpedance Amplifier

 

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Eudyna Devices Inc.

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F0100406B 3.3V 1.25Gbit/s Transimpedance Amplifier
03.05.27
Features
F0100406B
3.3V 1.25Gbit/s NRZ Receiver
Transimpedance Amplifier
-
5k
high transimpedance
-
30dB high gain
-
Low noise (typ.3.5p
/
z@100MHz)
-
Typical 900MHz O/E Bandwidth
-
Over 30dB wide dynamic range
-
3.3V single Voltage supply operation
-
Differential output
-
AGC with proper time constant
Applications
-
Preamplifier of an optical receiver circuit for GbE (1.25Gbit/s)
Functional Description
The F0100406B is stable GaAs integrated transimpedance amplifier. Typical Applications are for 1.25Gbit/s
optical receiver circuit, for example, GbE, instrumentation, and measurement applications. The integrated
feedback loop design provides broad bandwidth and stable operation. The F0100406B typically specifies a high
transimpedance of 5.0
(RL=50
) at a typical 900MHz O/E bandwidth (-3dB-cutoff frequency) with a dynamic
range of over 30dB. It also provides a large optical input overload of more than +2dBm. Furthermore, it can
operate with a low supply voltage of single +3.3V. It features a typical dissipation current of 45mA.
Only chip-shipment is available for all product lineups of GaAs transimpedance amplifiers, because the
packaged preamplifier cannot operate with the maximum performance owing to parasitic element of the package
.

F0100406B 3.3V 1.25Gbit/s Transimpedance Amplifier
Absolute Maximum Ratings
All published data at Ta=25
C unless otherwise indicated. This device isn't guaranteed opto-electric
characteristics in these ranges. At least, this device isn't broken in these ranges.
VSS=0V
Parameter Symbol
Value
Units
Attentions
Supply Voltage
VDD
-0.3 to +5.0V
V
Input Current
Iinpeak
4
mA
-
Ambient Operating Temperature
Ta
-40 to +90
C -
Storage Temperature
Tstg
-50 to 125
C -
Recommended Operating Conditions
VSS=0V,unless specified
Value
Parameter Symbol
MIN.
TYP.
MAX.
Unit Attentions
Supply
Voltage
VDD 3.10 3.30 3.60
V
Operating Temperature
Tc*
0
25
85
C
Input Capacitance
Cpd
-
0.6
-
pF
* Tc:Back side temperature of wafer

F0100406B 3.3V 1.25Gbit/s Transimpedance Amplifier
Electrical Characteristics
Tc*=0 to 85
C, VDD=3.1 to 3.6V, VSS=0V,unless specified
Value
Parameters Symbol
Test
Conditions
MIN. TYP. MAX
Units
Supply Current
IDD
DC
-
45
-
mA
Input Voltage
Vi
*1
-
0.95
-
V
Output Voltage (positive)
Vop
*1
-
2.1
-
V
Output Voltage (negative)
Von
*1
-
2.1
-
V
Gain (positive)
S21p
Single-ended, f=1MHz *1
-
30.0
-
dB
Gain (negative)
S21n
Single-ended, f=1MHz *1
-
30.0
-
dB
-3dB High Frequency
Cut-off (positive)
Fcp S21p-3dB
- 1200 -
MHz
-3dB High Frequency
Cut-off (positive)
Fcn S21p-3dB
- 1100 -
MHz
Input Impedance
Ri
f =1MHz, *1
-
190
-
Output Impedance (positive)
Rout
f =1MHz, *1
-
55
-
Output Impedance (negative)
Rout
f =1MHz, *1
-
55
-
Transimpedance (positive)
Ztp
RL=50
,Single-ended, *2
-
5
-
k
Transimpedance (negative)
Ztn
RL=50
,Single-ended ,*2
-
5
-
k
AGC time constant
Tagc
Cout=470pF
-
24
-
sec
* Tc:Back side temperature of wafer
*1 Test circuit is shown [Test Circuits / 1] AC Characteristics].
*2 Zt(p,n)=10^(S21(p,n)/20)
(Ri+50)/2
Optical and Electrical Characteristics
This table values are specified on condition of F0832483T. F0832483T is 2.5Gbps NRZ PIN-PD preamplifier
module using F0100504B. Test circuits of F0832483T are shown in [Test Circuits].
=1.3m, VDD=VPD=+3.1~+3.6V, VSS=GND, Tcm*3=-20~+85C, unless specified
Value
Parameters Symbol
Test
Conditions
MIN. TYP. MAX
Unit
Transimpedance Ztm
RL=50
,Single-ended,
f =100MHz, *4
- 5 - k
O/E High Cut-off Frequency
Fcoeh
Ztm-3dB, *4
-
900
-
MHz
O/E Low Cut-off Frequency
Fcoel
Cout=470pF
-
17
-
kHz
Equivalent Input Noise
Inoise f
=100MHz -
3.5
-
pA/
Hz
Sensitivity Pin-min
-
-29
-
dBm
Overload Pin-max
2.48832Gbps, PRBS2^23-1,
BER=1E-10, *5
+1 - - dBm
Output Impedance
Routm
No input, f=1MHz, *4
-
55
-
*3 Tcm : case temperature
*4 Show [Test Circuits / 3] Optical & Electrical Characteristics].
*5 Show [Test Circuits / 4] Sensitivity Characteristics].

F0100406B 3.3V 1.25Gbit/s Transimpedance Amplifier
Block Diagram
VDD
CAP
OUTB
OUT
Rf
AGC
IN
COUT
VSS
Symbol Description
VDD Supply
Voltage
VSS
Suplly Voltage Generaly Vss is connected to GND.
IN Input
OUT
Non-inverted data output, must be AC coupled.
OUTB
Inverted data output, must be AC coupled.
CAP
Connected to outer capasitance

F0100406B 3.3V 1.25Gbit/s Transimpedance Amplifier
Die Pad Assignment
3
9
8
6
5
7
4
2
1
A
O
660um
720um
No.
Symbol Center Coordinates (um)
No.
Symbol
Center Coordinates (um)
1 VDD
(65,65)
7 CAP
(65,565)
2 OUTB
(625,65)
8 VSS
(65,415)
3 VSS
(625,315)
9 IN
(65,265)
4 OUT
(625,565)
5 VSS
(420,565)
O
(0,0)
6 VDD
(270,565)
A
(790,790)
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