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Datasheet: B15V140 (No company)

Medium Power Silicon Microwave Transistor

 

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BIPOLARICS, INC.
Part Number B15V140
MEDIUM POWER SILICON MICROWAVE TRANSISTOR
SYMBOL
PARAMETERS & CONDITIONS
UNIT MIN. TYP. MAX.
V
CE
= 10V, I
C
=70 mA, Class A, unless stated
(1) Depends on package
C
CB
Collector Base Capacitance: V
CB
=10V
f = 1MHz
pF
.75
f
t
Gain Bandwidth Product
GHz
8.0
|S
21
|
2
Insertion Power Gain:
f = 1.0 GHz
dB
15.6
f = 2.0 GHz
dB
9.0
P
1d B
Power output at 1dB compression:
f = 1.0 GHz
dBm
27.0
NF
Noise Figure: V
CE
=8V, I
C
=20 mA
f = 1.0 GHz
dB
1.6
h
FE
Forward Current Transfer Ratio: V
CE
= 8V, I
C
=15 mA
30
100 300
I
CBO
Collector Cutoff Current : V
CB
=10V
A
0.4
I
C
= 75 mA
FEATURES:
High Gain Bandwidth Product
f
t
= 8 GHz typ @ I
C
= 70 mA
High Gain
|S
21
|
2
= 15.6 dB @ 1.0 GHz
9.0 dB @ 2.0 GHz
Dice, Plastic, Hermetic and Surface
Mount packages available
PERFORMANCE DATA:
Electrical Characteristics (T
A
= 25
o
C)
V
CBO
Collector-Base Voltage
30 V
SYMBOL PARAMETERS
RATING UNITS
Absolute Maximum Ratings:
DESCRIPTION AND APPLICATIONS:
Bipolarics' B15V140 is a high performance silicon bipolar
transistor intended for medium power linear and Class C
applications at VHF, UHF and microwave frequencies in 7.2
and 12V systems. Depending on package type, the B15V140
can operate at up to 0.5W. These applications include high
intermod receivers, CATV and instrumentation amplifiers as
well as pre-drivers, drivers and final stages in transmitter
applications such as cellular telephone. Package options in-
clude Dice, SOT-223 Surface Mount, Ceramic Micro-X,
0.145" Plastic SOT-103 and 0.230" power flange package.
PRODUCT DATA SHEET
MAX
(1)
V
CEO
Collector-Emitter Voltage
15
V
V
EBO
Emitter-Base Voltage
1.5
V
I
C
Collector Current (continuous) 120 mA
I
C
Collector Current (instantaneous) 180 mA
T
J
Junction Temperature
200
o
C
T
STG
Storage Temperature
-65 to 150
o
C
PAGE
2
BIPOLARICS, INC.
Part Number B15V140
MEDIUM POWER SILICON MICROWAVE TRANSISTOR
TYPICAL S PARAMETERS:
V
CE
= 3.3 V, I
C
= 75 mA
Z
O
= 50.0
T
A
=25
O
(Note: S-parameters were taken in a 35 package.)
FREQ.
S21
S12
S11
S22
GHz
dB
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
0.20
24.00
15.84
109
0.0233
54
0.5370
-162
0.1927
-103
0.50
18.20
8.12
90
0.0380
64
0.6683
178
0.1412
-141
1.00
12.00
3.98
78
0.0691
72
0.7161
176
0.1513
-141
1.50
8.80
2.75
68
0.1011
74
0.6760
159
0.1840
-141
2.00
6.20
2.04
58
0.1364
74
0.6606
152
0.2371
-145
2.50
4.30
1.64
48
0.1621
74
0.7413
145
0.2985
-153
3.00
2.70
1.36
44
0.1883
73
0.7585
142
0.3388
-146
3.50
1.70
1.21
34
0.2213
70
0.8035
133
0.3981
-151
4.00
0.00
1.00
29
0.2454
69
0.7498
131
0.5128
-153
V
CE
= 6 V, I
C
= 80 mA
Z
O
= 50.0
T
A
=25
O
(Note: S-parameters were taken in a 35 package.)
FREQ.
S21
S12
S11
S22
GHz
dB
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
0.20
24.75
17.27
110
0.0177
49
0.5688
-161
0.1995
-72
0.40
21.40
11.74
94
0.0301
62
0.7079
-179
0.1318
-98
0.60
17.40
7.41
85
0.0346
67
0.6839
173
0.1161
-102
0.80
15.30
5.82
81
0.0457
72
0.6683
174
0.1288
-106
1.00
13.40
4.67
77
0.0543
76
0.6839
174
0.1035
-100
1.20
11.90
3.93
72
0.0660
76
0.6606
162
0.1230
-104
1.50
9.80
3.09
66
0.0822
76
0.6531
153
0.1230
-114
2.00
7.30
2.31
57
0.1148
78
0.6760
149
0.1584
-116
2.50
5.40
1.86
48
0.1412
80
0.7328
133
0.2851
-134
3.50
2.7
1.36
34
0.1949
78
0.8317
120
0.3507
-140
4.00
0.9
1.10
26
0.2238
76
0.8222
120
0.4786
-142
FREQ.
S21
S12
S11
S22
GHz
dB
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
0.20
24.5
16.78
126
0.0239
42
0.5821 -146
0.3801
- 86
0.40
21.8 12.30
104
0.0263
48
0.7585 -168
0.2884
-122
0.60
18.3
8.222
92
0.0354
52
0.7244 -179
0.2600
-134
0.80
16.2
6.456
86
0.0426
56
0.7413
179
0.2600
-145
1.00
14.1
5.069
83
0.0467
64
0.7943
176
0.2371
-147
1.20
12.8
4.365
76
0.0543
65
0.7585
166
0.2630
-152
1.40
11.4
3.715
70
0.0602
67
0.7161
159
0.2630
-154
1.60
10.4
3.311
68
0.0691
68
0.7585
156
0.2691
-158
1.80
10.0
3.162
65
0.0724
70
0.7585
154
0.2884
-163
2.00
8.4
2.630
61
0.0794
71
0.7585
150
0.2851
-165
2.20
7.5
2.371
55
0.0841
71
0.7852
141
0.3235
-177
2.40
6.6
2.137
55
0.0870
74
0.7673
138
0.3054
-176
2.60
6.1
2.018
50
0.0954
73
0.8222
134
0.3630
180
2.80
5.2
1.819
47
0.1000
73
0.8222
132
0.3589
175
3.00
4.9
1.757
45
0.1109
76
0.8511
130
0.3935
180
3.20
3.9
1.566
40
0.1148
73
0.8317
126
0.4315
172
3.40
3.4
1.479
41
0.1216
75
0.8413
126
0.3845
171
3.60
3.1
1.428
33
0.1318
75
0.9120
118
0.4677
165
3.80
2.1
1.273
33
0.1303
74
0.8128
115
0.4216
159
4.00
2.0
1.258
35
0.1462
76
0.8709
119
0.4415
170
4.20
1.0
1.122
26
0.1479
72
0.8609
112
0.4518
156
V
CE
= 8 V, I
C
= 35 mA
Z
O
= 50.0
T
A
=25
O
(Note: S-parameters were taken in a 35 package.)
PAGE
3
BIPOLARICS, INC.
Part Number B15V140
MEDIUM POWER SILICON MICROWAVE TRANSISTOR
TYPICAL S PARAMETERS:
V
CE
= 8 V, I
C
= 75 mA
Z
O
= 50.0
T
A
=25
O
C (Note: S-parameters were taken in a 35 package.)
FREQ.
S21
S12
S11
S22
GHz
dB
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
0.20
25.0
17.78
124
0.0169
46
0.6456
-156
0.3090
-102
0.40
21.6
12.02
102
0.0229
54
0.8128
-136
0.2630
-136
0.60
18.4
8.317
92
0.0288
62
0.7843
176
0.2511
-145
0.80
16.2
6.456
87
0.0371
68
0.7952
174
0.2600
-155
1.00
14.2
5.128
83
0.0426
72
0.7943
172
0.2371
-155
1.20
12.8
4.365
78
0.0506
73
0.7943
162
0.2630
-159
1.40
11.4
3.715
72
0.0575
73
0.7478
156
0.2630
-169
1.60
10.1
3.198
70
0.0630
74
0.7943
154
0.2722
-164
1.80
9.1
2.851
66
0.0707
77
0.7762
151
0.2884
-168
2.00
8.2
2.570
63
0.0794
77
0.7673
148
0.2851
-168
2.20
6.9
2.213
58
0.0860
75
0.7852
139
0.3235
178
2.40
6.0
1.995
59
0.0891
78
0.7762
136
0.3090
180
2.60
5.5
1.883
54
0.1000
77
0.8222
132
0.3845
176
2.80
4.6
1.698
51
0.1047
77
0.8222
131
0.4265
172
3.00
4.3
1.640
49
0.1109
79
0.8413
129
0.4073
177
3.20
3.6
1.513
45
0.1174
76
0.8317
128
0.4073
169
3.40
3.0
1.412
46
0.1244
78
0.8413
125
0.3801
168
3.60
2.7
1.364
37
0.1348
75
0.9120
117
0.4677
162
3.80
1.5
1.188
17
0.1303
76
0.8128
114
0.4168
156
4.00
1.8
1.230
18
0.1462
79
0.8709
118
0.4365
167
4.20
0.6
1.071
30
0.1479
74
0.8609
111
0.4415
-154
V
CE
= 8 V, I
C
= 75 mA
Z
O
= 50.0
T
A
=25
O
C (Note: S-parameters were taken in a 23 package.)
FREQ.
S21
S12
S11
S22
GHz
dB
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
0.20
25.60
19.05
106
0.0151
-12
0.5128
-147
0.3090
-102
0.50
20.0
10.0
85
0.0208
20
0.4731
174
0.3162
-109
1.00
15.60
6.02
66
0.0446
58
0.5011
168
0.5623
-149
1.50
12.20
4.07
46
0.0676
68
0.4518
121
0.3198
4
2.00
9.0
2.82
20
0.0776
30
0.4027
87
0.6095
163
2.50
8.0
2.51
14
0.0562
-38
02238
21
0.5128
160
3.00
6.80
2.23
-54
0.1258
-36
0.6309
-1
0.6683
94
3.50
4.40
1.66
-79
0.0891
-30
0.6025
-23
0.7413
44
4.00
1.60
1.20
-90
0.0794
-64
0.3548
-65
0.7585
48
V
CE
= 8 V, I
C
= 80 mA
Z
O
= 50.0
T
A
=25
O
C (Note: S-parameters were taken in a -18 package.)
FREQ.
S21
S12
S11
S22
GHz
dB
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
0.20
26.80
21.87
100
0.0199
66
0.4216
-160
0.2691
-78
0.50
19.80
9.77
80
0.0431
70
0.5688
175
0.1972
-98
1.00
14.00
5.01
60
0.0841
71
0.5011
157
0.3162
-106
1.50
11.00
3.54
50
0.1258
72
0.4168
146
0.5308
-111
2.00
8.70
2.72
35
0.1778
65
0.3162
120
0.6760
-128
2.50
6.20
2.04
35
0.2344
62
0.2511
94
0.7673
-139
3.00
5.80
1.95
9
0.3019
56
0.2113
56
0.6165
-155
3.50
5.00
1.77
-2
0.3630
48
0.2018
0
0.6918
-158
4.00
4.60
1.69
-14
0.4731
35
0.2290
-60
0.5888
-160
PAGE
4
BIPOLARICS, INC.
Part Number B15V140
MEDIUM POWER SILICON MICROWAVE TRANSISTOR
85 Package: Micro-X 85 Mil Ceramic
70 Package: 70 Mil Stripline
5.0 MIN (ALL LEADS)
4 5
0.5+0.07
1 . 3
+0.4
- 0 . 3
0 . 1
+0.06
- 0 . 0 3
+0.4
- 0 . 2
2 . 5
1.0+0.1
23 Package: 0.230" BeO Flange
LEAD 1 2 3 4
10 Package Emitter Base
Emitter Collector
14, 85, 86, 35 Base Emitter Collector Emitter
& 04 Package
NOTES: (unless otherwise specified)
1. Dimensions are
in
2. Tolerances:
in .xxx =
.005
mm .xx =
.13
3. All dimensions nominal; subject to change
without notice
( mm )
Part Number B15V140
MEDIUM POWER SILICON MICROWAVE TRANSISTOR
PAGE
5
BIPOLARICS, INC.
0.30
0.51
1.39
1.57
2.25
2.75
0.45
0.60
0.95
2.65
3.04
0.00
0.10
0.45
0.60
0.10
0.79
1.1
1.90
43 Package: SOT-143
02 Package: SOT-23J
22 Package: SOT-223
02 Package: SOT-23
BIPOLARICS, INC.
Part Number B15V140
MIDIUM POWER SILICON MICROWAVE TRANSISTOR
PAGE
6
85 Package:0.085" Plastic Micro-X
04 Package: 0.145" Plastic Macro-X
0.02
.51
0.008+0.002
0.203+0.051
0.032+0.015
2.34+0.38
.020+.010
0.51+.25
0.106+0.015
2.67+0.38
0.026+0.001
0.66+0.13
0.085+0.005
2.16+0.13
0.060+0.01
1.52+0.25
1
2
3
4
.020
.51
5
.065
2.15
.008+.002
.20+.050
1
2
3
4
.215+.010
5.46+.25
.020
.51
.60+0.10
1.52+.26
86 Package: 0.08" Plastic Micro-X,
Surface Mount
87 Package: 0.085" Plastic Micro-X,
Short Lead
BIPOLARICS, INC.
Part Number B15V140
PAGE
7
MIDIUM POWER SILICON MICROWAVE TRANSISTOR
.160
(4.064)
.050
(1.27)
.020
(.508)
.070
(1.778)
.190
(4.826)
Emitter
Collector
Emitter
Base
Base
Emitter
Collector
Emitter
0.086
(2.184)
NOTES: (unless otherwise specified)
1. Dimensions are
in
2. Tolerances:
in .xxx =
.005
mm .xx =
.13
3. All dimensions nominal; subject to change
without notice
PRODUCT DATA SHEET
08 Ceramic SO8 Package
(mm)
BIPOLARICS, INC.
46766 Lakeview Blvd.
Fremont, CA 94538
Phone: (510) 226-6565 FAX: (510) 226-6765
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