HTML datasheet архив (поиск документации на электронные компоненты) Поиск даташита (1.687.043 компонентов)
Где искать

Datasheet: B12V10500 (No company)

NPN LOW NOISE SILICON MICROWAVE TRANSISTOR

 

Скачать: PDF   ZIP
No company
FEATURES:
High Gain Bandwidth Product
f
t
= 10 GHz typ @ I
C
= 10 mA
Low Noise Figure
1.6 dB typ at 1 GHz
2.0 dB typ at 2 GHz
High Gain
|S
21
|
2
= 18.1 dB @ 1 GHz
12.8 dB @ 2 GHz
Dice, Plastic, Hermetic and Surface
Mount packages available
PERFORMANCE DATA:
Electrical Characteristics (T
A
= 25
o
C)
NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
PRODUCT DATA SHEET
BIPOLARICS, INC. Part Number B12V105
SYMBOL
PARAMETERS & CONDITIONS
UNIT MIN. TYP. MAX.
V
CE
=8V, I
C
= 10 mA unless stated
V
CBO
Collector-Base Voltage
20
V
V
CEO
Collector-Emitter Voltage
12
V
V
EBO
Emitter-Base Voltage
1.5
V
I
C CONT
Collector Current
40
mA
T
J
Junction Temperature
200
o
C
T
STG
Storage Temperature
-65 to 150
o
C
SYMBOL PARAMETERS
RATING UNITS
Absolute Maximum Ratings:
Insertion Power Gain:
f = 1.0 GHz, I
C
= 10 mA
17.5
I
C
= 25 mA
18.1
f = 2.0 GHz, I
C
= 10 mA
12.8
I
C
= 25 mA
12.6
NF
Noise Figure: V
CE
=8V, I
C
= 2mA
f = 1.0 GHz
dB
1.6
Z
S
= 50
C
CB
Collector Base Capacitance: V
CB
= 8V
f = 1MHz
pF
0.11
I
CBO
Collector Cutoff Current : V
CB
=8V
A 0.2
V
CE
= 8V, I
C
= 10 mA
f
t
|S
21
|
2
Gain Bandwidth Product
GHz
10
P
1d B
Power output at 1dB compression:
f = 1.0 GHz
dBm
12
G
1d B
Gain at 1dB compression:
f = 1.0 GHz
dBm
15
h
FE
Forward Current Transfer Ratio:
f = 1MHz
50
100
250
I
EBO
Emitter Cutoff Current : V
EB
=1V
A
1.0
DESCRIPTION AND APPLICATIONS:
Bipolarics' B12V105 is a high performance silicon bipolar
transistor intended for use in low noise application at VHF,
UHF and microwave frequencies. High performance low
noise performance can be realized at 2 mA or less making the
B12V105 an excellent choice for battery applications. From
10 mA to greater than 25 mA, f
t
is nominally 10 GHz.
Maximum recommended continuous current is 40 mA. A
broad range of packages are offered including SOT-23, SOT-
143, plastic and ceramic 0.085" Micro-X, 0.070" Stripline and
unencapsulated dice.
BIPOLARICS, INC.
Part Number B12V105
NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
PRODUCT DATA SHEET
0.20000
0.8709
-19
5.888
172
0.0316
80
0.9549
-10
15.4
0.40000
0.8511
-32
4.623
157
0.0478
76
0.9120
-17
13.3
0.60000
0.8128 -45
4.027
142
0.0660
61
0.8511
-25
12.1
0.80000
0.7762
-55
3.388
137
0.0776
59
0.8511
-32
10.6
1.00000
0.7244
-68
3.273
126
0.0876
53
0.7161
-34
10.3
1.20000
0.6760 -80
3.162
122
0.0933
51
0.6998
-37
10.0
1.40000
0.6309 -100
3.235
116
0.1035
48
0.6531
-47
10.2
1.60000
0.5888 -114
3.019
106
0.1071
47
0.6165
-49
9.6
1.80000
0.5754 -124
2.786
102
0.1096
46
0.6456
-51
8.9
2.00000
0.5623 -137
2.722
88
0.1148
46
0.6025
-54
8.7
2.20000
0.5370 -144
2.691
82
0.1174
45
0.5888
-57
8.6
2.40000
0.5248 -165
2.317
86
0.1188
46
0.5370
-63
7.3
2.60000
0.5370 -174
2.264
84
0.1216
48
0.5308
-64
7.1
2.80000
0.5128 178
2.187
78
0.1244
49
0.5188
-70
6.8
3.00000
0.5069 173
1.949
78
0.1258
50
0.4897
-72
5.8
3.20000
0.4954 166
1.883
73
0.1303
51
0.5011
-78
5.5
3.40000
0.5011 162
1.737
70
0.1333
53
0.4677
-81
4.8
3.60000
0.5128 153
1.717
69
0.1348
55
0.4773
-87
4.7
3.80000
0.5432 152
1.566
63
0.1333
57
0.4773
-96
3.9
4.00000
0.5308 152
1.479 64
0.1348
60
0.4677
-93
3.4
4.20000
0.5188 144
1.445 58
0.1380
61
0.5069 -102
3.2
PAGE
2
(NOTE: S-Parameters were taken in a ceramic Micro-X package; See package outline 35)
FREQ.
S11
S21
S12
S22
S21
GHz
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
dB
TYPICAL S PARAMETERS:
BIAS CONDITION: V
CE
= 5 V, I
C
= 2 mA
S-MATRIX: Z
S
= 50.0 + J 0.0 Z
L
= 50.0 + J 0.0
PAGE
3
0.20000
0.7762
-24
12.02
151
0.0223
74
0.9225
-14
21.6
0.40000
0.7885
-44
10.47
134
0.0398
72
0.8709
-25
20.4
0.60000
0.6382 -60
8.810
106
0.0512
60
0.7413
-31
18.9
0.80000
0.6165
-72
7.244
80
0.0568
59
0.7079
-36
17.2
1.00000
0.5248
-88
6.456
72
0.0616
57
0.6095
-38
16.2
1.20000
0.4677 -102
6.025
57
0.0691
57
0.5559
-40
15.6
1.40000
0.4168 -124
5.188
44
0.0776
57
0.5495
-48
14.3
1.60000
0.3672 -138
4.677
30
0.0822
57
0.5128
-46
13.4
1.80000
0.3548 -146
4.168
20
0.0860
58
0.5069
-50
12.4
2.00000
0.3467 -158
3.901
9
0.0954
59
0.4677
-52
12.0
2.20000
0.3548 -176
3.801
-4
0.1047
60
0.4570
-58
11.6
2.40000
0.3235 171
3.388
-17
0.1071
62
0.4216
-60
10.6
2.60000
0.3672 163
3.273
-27
0.1122
63
0.4315
-62
10.3
2.80000
0.3801 157
3.019
-39
0.1174
63
0.4265
-67
9.6
3.00000
0.3935 153
2.818
-49
0.1230
64
0.4168
-70
9.0
3.20000
0.4120 146
2.722
-60
0.1318
65
0.4073
-75
8.7
3.40000
0.4216 142
2.570
-70
0.1348
65
0.3890
-79
8.2
3.60000
0.4786 135
2.511
-82
0.1380
67
0.3890
-83
8.0
3.80000
0.4731 132
2.290
-92
0.1412
69
0.3981
-86
7.2
4.00000
0.4841 131
2.187 -101
0.1445
70
0.3870
-88
6.8
4.20000
0.5495 128
2.162 -112
0.1548
68
0.3801
-99
6.7
PRODUCT DATA SHEET
NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
BIPOLARICS, INC.
Part Number B12V105
FREQ.
S11
S21
S12
S22
S21
GHz
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
dB
(NOTE: S-Parameters were taken in a ceramic Micro-X package; See package outline 35, 36)
TYPICAL S PARAMETERS:
BIAS CONDITION: V
CE
= 5 V, I
C
= 5 mA
S-MATRIX: Z
S
= 50.0 + J 0.0 Z
L
= 50.0 + J 0.0
PRODUCT DATA SHEET
FREQ.
S11
S21
S12
S22
S21
GHz
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
dB
0.20000
0.6025
-46
15.84
160
0.0177
70
0.8912
-17
24.0
0.40000
0.5888
-78
14.12
144
0.0301
65
0.7762
-30
23.0
0.60000
0.4954 -109
11.09
124
0.0407
56
0.6309
-36
20.9
0.80000
0.4786 -122
9.332
118
0.0457
58
0.6095
-40
19.4
1.00000
0.4265 -136
7.498
109
0.0506
58
0.5128
-39
17.5
1.20000
0.4027 -151
6.456
102
0.0537
60
0.5248
-42
16.2
1.40000
0.4027 -168
6.025
99
0.0616
62
0.4677
-49
15.6
1.60000
0.3935 -180
5.308
94
0.0676
62
0.4315
-50
14.5
1.80000
0.3890 176
4.897
90
0.0707
64
0.4415
-52
13.8
2.00000
0.3890 170
4.518
85
0.0741
66
0.4027
-53
13.1
2.20000
0.4216 158
4.365
82
0.0803
65
0.4120
-58
12.8
2.40000
0.4168 149
3.890
79
0.0812
67
0.3758
-62
11.8
2.60000
0.4623 145
3.715
77
0.0912
69
0.3845
-64
11.4
2.80000
0.4786 140
3.388
74
0.0933
68
0.3672
-70
10.6
3.00000
0.4897 138
3.198
74
0.1000
71
0.3758
-71
10.1
3.20000
0.4841 133
3.019
71
0.1059
70
0.3880
-76
9.6
3.40000
0.4954 128
2.818
67
0.1011
72
0.3630
-75
9.0
3.60000
0.5495 123
2.660
66
0.1188
72
0.3935
-84
8.5
3.80000
0.5754 121
2.371
62
0.1188
72
0.3548
-90
7.5
4.00000
0.5821 120
2.137
62
0.1230
76
0.3890
-86
6.6
4.20000
0.5888 117
2.018
58
0.1318
74
0.3548
-94
6.1
PAGE
4
BIPOLARICS, INC.
Part Number B12V105
NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
TYPICAL S PARAMETERS:
BIAS CONDITION: V
CE
= 8 V, I
C
= 10 mA
S-MATRIX: Z
S
= 50.0 + J 0.0 Z
L
= 50.0 + J 0.0
(NOTE: S-Parameters were taken in a ceramic Micro-X package; See package outline 35, 36)
BIPOLARICS, INC. Part Number B12V105
NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
PRODUCT DATA SHEET
FREQ.
S11
S21
S12
S22
S21
GHz Mag Ang Mag Ang Mag Ang Mag Ang
dB
0.20000
0.4466
-55
17.78
154
0.0149
56
0.7585
-22
25.0
0.40000
0.4265
-98
14.62
136
0.0234
62
0.6456
-34
23.3
0.60000
0.3715
-127
12.44
116
0.0301
64
0.5069
-33
21.9
0.80000
0.3672
-140
9.855
105
0.0342
68
0.5011
-36
19.9
1.00000
0.3467
-145
8.035
102
0.0407
69
0.4466
-33
18.1
1.20000
0.3019
-158
7.244
96
0.0467
71
0.4786
-34
17.2
1.40000
0.3311
-165
6.025
93
0.0543
72
0.4027
-43
15.6
1.60000
0.3801 -172
5.308
88
0.0638
72
0.3715
-41
14.5
1.80000
0.4027 -176
4.677
86
0.0645
74
0.3630
-46
13.4
2.00000
0.4120 168
4.265
84
0.0699
76
0.3630
-47
12.6
2.20000
0.4365 157
4.027
80
0.0785
77
0.3548
-53
12.1
2.40000
0.4315 149
3.672
77
0.0915
77
0.3273
-57
11.3
2.60000
0.4731 146
3.467
76
0.0891
78
0.3235
-61
10.8
2.80000
0.4897 141
3.235
73
0.0933
78
0.3162
-67
10.2
3.00000
0.4786 141
3.019
73
0.1000
80
0.3198
-69
9.6
3.20000
0.4954 137
2.804
70
0.1071
80
0.3198
-74
9.2
3.40000
0.5308 134
2.732
68
0.1109
79
0.2951
-76
8.7
3.60000
0.5559 128
2.630
65
0.1202
80
0.3162
-82
8.4
3.80000
0.5432 128
2.398
64
0.1206
79
0.2851
-94
7.6
4.00000
0.5370 129
2.364
64
0.1258
81
0.3162
-91
7.1
4.20000
0.5623 125
2.137
61
0.1348
80
0.3162
-90
6.6
PAGE
5
TYPICAL S PARAMETERS:
BIAS CONDITION: V
CE
= 8 V, I
C
= 25 mA
S-MATRIX: Z
S
= 50.0 + J 0.0 Z
L
= 50.0 + J 0.0
(NOTE: S-Parameters were taken in a ceramic Micro-X package; See package outline 35, 36)
NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
PAGE
6
.020
.51
5
.065
2.15
.008+.002
.20+.050
1
2
3
4
.215+.010
5.46+.25
.020
.51
.60+0.10
1.52+.26
BIPOLARICS, INC. Part Number B12V105
86 Package: 0.085" Plastic Micro-X,
Surface Mount
87 Package: 0.085" Plastic Micro-X,
Short Lead
04 Package: 0.145" Plastic Macro-X
85 Package: 0.085" Plastic Micro-X
0.02
.51
0.008+0.002
0.203+0.051
0.032+0.015
2.34+0.38
.020+.010
0.51+.25
0.106+0.015
2.67+0.38
0.026+0.001
0.66+0.13
0.085+0.005
2.16+0.13
0.060+0.01
1.52+0.25
1
2
3
4
NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
PAGE
7
BIPOLARICS, INC.
02 Package: SOT-23
14 Package: SOT-143
0.30
0.51
1.39
1.57
2.25
2.75
0.45
0.60
0.95
2.65
3.04
0.00
0.10
0.45
0.60
0.10
0.79
1.1
1.90
02J Package: SOT-23J
Part Number B12V105
92 Package: TO-92
BIPOLARICS, INC.
Part Number B12V105
NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
ORDERING INFORMATION:
P/N Including Pkg Temp Range/App
B12V105 00 -55 to +125C
B12V105 02
-40 to +85C
B12V105 14
-40 to +85C
B12V105 35
-55 to +125C
B12V105 92
-40 to +85C
NOTES: (unless otherwise specified)
1. Dimensions are
in
2. Tolerances:
in .xxx =
.005
mm .xx =
.13
3. All dimensions nominal; subject to change
without notice
LEAD 1 2 3 4
14, 85, 86, 87, 35 Base Emitter
Collector Emitter
& 04 Packages
B I P O L A R I C S , I N C .
46766 Lakeview Blvd.
Fremont, CA 94538
Phone: (510) 226-6565 FAX: (510) 226-6765
85 Package: Micro-X 0.085" Ceramic
(mm)
PAGE
8
© 2017 • ChipFind
Контакты
Главная страница