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Datasheet: 9014B (No company)

Silicon NPN Epitaxial Transistor

 

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No company
May.2004 Version :0.0 Page 1 of 1
9014B Silicon NPN Epitaxial Transistor
Description :The 9014B is designed for use in pre-amplifier of low level and low noise
Features: Excellent h
FE
Linearity
Complementary to 9015B
Chip Appearance
Chip Size
350um350um
Chip Thickness
21020um
Base
110um110um
Bonding Pad Size
Emitter
100um100um
Front Metal
Al
Backside Metal
Au(As)
Scribe line width
40um
Wafer Size
6 inch
Electrical Characteristics( Ta=25)
Characteristic
Symbol Test
Condition Min
Max
Unit
Collector Cutoff Current
I
CBO
V
CB
=40V, I
E
=0
0.1
uA
Emitter Cutoff Current
I
EBO
V
EB
=5V, I
C
=0
0.1
uA
Collector-Base Breakdown Voltage
BV
CBO
I
C
=0.1mA,
50
V
Collector-Emitter Breakdown Voltage
BV
CEO
I
C
=1mA,
45
V
Emitter-Base Breakdown Voltage
BV
EBO
I
E
=0.1mA,
5.0
V
DC Current Gain
h
FE
V
CE
=5V, I
C
=1mA 150
600
Collector Saturation Voltage
V
CE
(sat)
I
C
=100mA,I
B
=5mA 0.30
V
9014B
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