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Datasheet: B150 (Diodes Incorporated)

1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

 

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Diodes Incorporated
DS13002 Rev. H-2
1 of 3
B120/B-B160/B
B120/B - B160/B
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Features
Maximum Ratings and Electrical Characteristics
@ T
A
= 25C unless otherwise specified
Guard Ring Die Construction for
Transient Protection
Ideally Suited for Automatic Assembly
Low Power Loss, High Efficiency
Surge Overload Rating to 30A Peak
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Application
Plastic Material - UL Flammability
Classification 94V-0
Mechanical Data
Case: Molded Plastic
Terminals: Solder Plated Terminal -
Solderable per MIL-STD-202, Method 208
Polarity: Cathode Band or Cathode Notch
Approx. Weight: SMA 0.064 grams
SMB 0.093 grams
Marking: Type Number
No Suffix Designates SMA Package
"B" Suffix Designates SMB Package
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SMA
SMB
Dim
Min
Max
Min
Max
A
2.29
2.92
3.30
3.94
B
4.00
4.60
4.06
4.57
C
1.27
1.63
1.96
2.21
D
0.15
0.31
0.15
0.31
E
4.80
5.59
5.00
5.59
G
0.10
0.20
0.10
0.20
H
0.76
1.52
0.76
1.52
J
2.01
2.62
2.00
2.62
All Dimensions in mm
A
B
C
D
G
H
E
J
Characteristic
Symbol
B120/B
B130/B
B140/B
B150/B
B160/B
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
20
30
40
50
60
V
RMS Reverse Voltage
V
R(RMS)
14
21
28
35
42
V
Average Rectified Output Current
@ T
T
= 130C
I
O
1.0
A
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
I
FSM
30
A
Forward Voltage
@ I
F
= 1.0A
V
FM
0.50
0.70
V
Peak Reverse Current
@T
A
= 25C
at Rated DC Blocking Voltage
@ T
A
= 100C
I
RM
0.5
10
mA
Typical Junction Capacitance (Note 2)
C
j
110
pF
Typical Thermal Resistance Junction to Terminal (Note 1)
R
qJT
20
C/W
Operating and Storage Temperature Range
T
j,
T
STG
-65 to +150
C
Notes:
1. Thermal Resistance: Junction to terminal, unit mounted on PC board with 5.0 mm
2
(0.013 mm thick) copper pads as heat sink.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
DS13002 Rev. H-2
2 of 3
B120/B-B160/B
0.1
1.0
10
0.2
0.4
0.6
0.8
1.0
1.2
I
,
INST
ANT
A
NEOUS
FWD
C
URRENT
(A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics - B120/B thru B140/B
F
T = +25 C
A
T = +75 C
A
T = +125 C
A
T = -25 C
A
I Pulse Width = 300 s
F
m
0.01
0.1
1.0
10
0
0.2
0.4
0.6
0.8
1.0
I
,
INST
ANT
ANEOUS
FOR
W
ARD
CURRENT
(A)
F
V , INSTANTANEOUS FWD VOLTAGE (V)
Fig. 3 Typ. Forward Characteristics - B150/B thru B160/B
F
I Pulse Width = 300 ms
F
T = +125C
A
T = +25C
A
10
20
30
40
0
1
10
100
I
,
PEAK
FOR
W
ARD
SURGE
CURRENT
(A)
FSM
Fig. 4 Max Non-Repetitive Peak Fwd Surge Current
NUMBER OF CYCLES AT 60 Hz
Single Half Sine-Wave
(JEDEC Method)
T = 150C
j
10
100
1000
0.1
1
10
100
C
,
JUNCTION
CAP
ACIT
ANCE
(pF)
j
V , REVERSE VOLTAGE (V)
Fig. 5 Typical Junction Capacitance
R
T = 25C
f = 1 MHz
j
0
0.5
1.0
25
50
75
100
125
150
I
A
VERAGE
RECTIFIED
CURRENT
(A)
O,
T , TERMINAL TEMPERATURE (C)
Fig. 1 Forward Current Derating Curve
T
100
10
1
0.1
0.01
1000
10,000
0
20
40
60
I
,
INST
ANT
ANEOUS
REVERSE
CURRENT
(
A)
R
m
V , INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 6 Typical Reverse Characteristics, B120/B thru B140/B
R
10
30
50
T = +25 C
A
T = +125 C
A
T = -25 C
A
T = +75 C
A
DS13002 Rev. H-2
3 of 3
B120/B-B160/B
100
10
1
0.1
1000
10,000
0
20
40
60
70
I
,
INST
ANT
ANEOUS
REVERSE
CURRENT
(
A)
R
m
V , INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 7 Typical Reverse Characteristics, B150/B thru B160/B
R
10
30
50
T = +25 C
A
T = +125 C
A
T = +70 C
A
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