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Datasheet: B1100LB (Diodes Incorporated)

1.0a High Voltage Schottky Barrier Rectifier

 

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Diodes Incorporated
DS30077 Rev. A-2
1 of 2
B1100LB
B1100LB
1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
Features
Maximum Ratings and Electrical Characteristics
@ T
A
= 25
C unless otherwise specified
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
Ideally Suited for Automatic Assembly
Low Power Loss, High Efficiency
Surge Overload Rating to 50A Peak
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Application
High Temperature Soldering:
260
C/10 Second at Terminal
Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
Case: SMB, Molded Plastic
Terminals: Solder Plated Terminal -
Solderable per MIL-STD-202, Method 208
Polarity: Cathode Band or Cathode Notch
Marking: B110LB and Date Code
Weight: 0.093 grams (approx.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
A
B
C
D
G
H
E
J
Characteristic
Symbol
B1100LB
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
100
V
RMS Reverse Voltage
V
R(RMS)
70
V
Average Rectified Output Current
@ T
T
= 120
C
@ T
T
= 100
C
I
O
1.0
2.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method)
I
FSM
50
A
Forward Voltage
@ I
F
= 1.0A, T
A
= 25
C
V
FM
0.75
V
Peak Reverse Current
@ T
A
= 25
C
at Rated DC Blocking Voltage
@ T
A
= 100
C
I
RM
0.5
5.0
mA
Typical Junction Capacitance (Note 2)
C
j
100
pF
Typical Thermal Resistance Junction to Terminal (Note 1)
R
qJT
22
K/W
Operating and Storage Temperature Range
T
j,
T
STG
-65 to +150
C
Notes:
1. Valid provided that terminals are kept at ambient temperature.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
SMB
Dim
Min
Max
A
3.30
3.94
B
4.06
4.57
C
1.96
2.21
D
0.15
0.31
E
5.00
5.59
G
0.10
0.20
H
0.76
1.52
J
2.00
2.62
All Dimensions in mm
DS30077 Rev. A-2
2 of 2
B1100LB
0.01
0.1
1.0
10
0
0.2
0.4
0.6
0.8
1.0
I
,
INST
ANT
ANEOUS
FWD
CURRENT
(A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
F
T - 25 C
j
I Pulse Width = 300 s
F
10
20
30
40
50
0
1
10
100
I
,
PEAK
FWD
SURGE
CURRENT
(A)
FSM
NUMBER OF CYCLES AT 60Hz
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
Single Half Sine-Wave
(JEDEC Method)
T = 150 C
j
0
40
80
120
160
200
240
1
0.1
10
100
C
,
(pF)
j
JUNCTI
O
N
CAPACITANCE
V ,
(V)
R
REVERSE VOLTAGE
Fig. 4 Typical Junction Capacitance
f = 1.0MHz
T = 25 C
j
280
0
1
2
4
3
25
50
75
100
125
150
I
A
VERAGE
FWD
CURRENT
(A)
(A
V),
T , TERMINAL TEMPERATURE ( C)
Fig. 1 Forward Current Derating Curve
T
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