HTML datasheet архив (поиск документации на электронные компоненты) Поиск даташита (1.687.043 компонентов)
Где искать

Datasheet: B1100B (Diodes Incorporated)

1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

 

Скачать: PDF   ZIP
Diodes Incorporated
D
S30018 Rev. B-2 1 of 2 B170/B - B1100/B
B170/B - B1100/B
1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
Features
Maximum Ratings and Electrical Characteristics
@ T
A
= 25
C unless otherwise specified
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
Ideally Suited for Automatic Assembly
Low Power Loss, High Efficiency
Surge Overload Rating to 30A Peak
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Application
High Temperature Soldering:
260
C/10 Second at Terminal
Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
Case: SMA / SMB, Molded Plastic
Terminals: Solder Plated Terminal -
Solderable per MIL-STD-202, Method 208
Polarity: Cathode Band or Cathode Notch
SMA Weight: 0.064 grams (approx.)
SMB Weight: 0.093 grams (approx.)
Mounting Position: Any
Marking: Type Number
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
A
B
C
D
G
H
E
J
Characteristic
Symbol
B170/B
B180/B
B190/B
B1100/B
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
70
80
90
100
V
RMS Reverse Voltage
V
R(RMS)
49
56
63
70
V
Average Rectified Output Current
@ T
T
= 125
C
I
O
1.0
A
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
I
FSM
30
A
Forward Voltage @ I
F
= 1.0A
@ T
A
= 25
C
@ T
A
= 100
C
V
FM
0.79
0.69
V
Peak Reverse Current
@ T
A
= 25
C
at Rated DC Blocking Voltage
@ T
A
= 100
C
I
RM
0.5
5.0
mA
Typical Junction Capacitance (Note 2)
C
j
80
pF
Typical Thermal Resistance Junction to Terminal (Note 1)
R
qJT
25
K/W
Operating and Storage Temperature Range
T
j,
T
STG
-65 to +150
C
Notes:
1. Valid provided that terminals are kept at ambient temperature.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
No Suffix Designates SMA Package
"B" Suffix Designates SMB Package
SMA
SMB
Dim
Min
Max
Min
Max
A
2.29
2.92
3.30
3.94
B
4.00
4.60
4.06
4.57
C
1.27
1.63
1.96
2.21
D
0.15
0.31
0.15
0.31
E
4.80
5.59
5.00
5.59
G
0.10
0.20
0.10
0.20
H
0.76
1.52
0.76
1.52
J
2.01
2.62
2.00
2.62
All Dimensions in mm
D
S30018 Rev. B-2 2 of 2 B170/B - B1100/B
0.01
0.1
1.0
10
0
0.2
0.4
0.6
0.8
1.0
I
,
INST
ANT
ANEOUS
FOR
W
ARD
CURRENT
(A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
F
T - 25 C
j
I Pulse Width = 300 s
F
10
20
30
40
0
1
10
100
I
,
PEAK
FOR
W
ARD
SURGE
CURRENT
(A)
FSM
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
Single Half Sine-Wave
(JEDEC Method)
T = 150 C
j
10
100
1000
0.1
1
10
100
C
,
JUNCTION
CAP
ACIT
ANCE
(pF)
j
V , REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
R
T = 25C
f = 1.0MHz
j
0
0.5
1.0
25
50
75
100
125
150
I
A
VERAGE
F
O
R
W
ARD
CURRENT
(A)
(A
V),
T , TERMINAL TEMPERATURE ( C)
Fig. 1 Forward Current Derating Curve
T
© 2017 • ChipFind
Контакты
Главная страница