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Datasheet: IM23400 (Cyntec Co., Ltd.)

Intelligent Power Module (SDIP) - 20A

 

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PAGE 1 OF 14
SDIP-IPM IM23400
Description
Cyntec IPM is integrated Drive, protection and system
control functions that is designed for high performance 3-phase
motor driver application like:
Home appliances applications.
Inverter drive parts for AC/DC motor driving.
The device is a super compact type , low-cost , speed controller.
Features
UL Certified NO.E204652
Lower switching loss and higher short-circuit withstanding capability by using NPT technology IGBT.
Integrated driver IC to reduce the PCB size and layout effort.
Under-voltage lockout protection both for high and low side IGBT.
Using DCB Substrate as the heat-sink to withstand the power semiconductor to get the lower thermal resistance.
Matched propagation delay for three arms to get balance switching performance.
Provided a fault signal (FO pin) and shut-off internal IGBT, when OC/SC and under-voltage situation are occurred.
Lead-Free packaging and RoHS compatible


TITLE:
ENGINEERING SPEC. OF IPM SDIP 600V 20A
DOCUMENT
NO.
MM23400007
PAGE
REV.
A1
UNLESS OTHERWISE SPECIFIED
TOLERQNCES ON
X =
X.X =
X.XX =
ANGLES
HOLE DIA.
SCALE
X
UNIT
X
APPROVED BY
DRAWN BY
DESIGNED BY
CHECKED BY
THIS DRAWINGS AND SPECIFICATIONS ARE THE PROPERTY OF CYNTEC CO., LTD.
AND SHALL NOT BE REPRODUCED OR USED AS THE BASIS FOR THE
MANUFACTURE OR SALE OF APPARATUS OR DEVICES WITHOUT PERMISSION
CYNTEC CO., LTD.
DETAIL B
DETAIL A
Detail A
Detail B
DETAIL C
Detail C
TERMINAL CODE
1 V
S1
2 V
B1
3 V
CC
4 HIN1
5 V
S2
6 V
B2
7 V
CC
8 HIN2
9 V
S3
10 V
B3
11 V
CC
12 HIN3
13 NO
14 LIN1
15 LIN2
16 LIN3
17 FO
18 CFO
19 CIN
20 GND
21 V
CC
22 P
23 U
24 V
25 W
26 N
21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1
26 25 24 23 22
DETAIL D
Detail D
PAGE 2 OF 14
Integrated Drive, Protection and System Control Functions
For high-side IGBTs
Gate drive circuit, High voltage isolated high-speed level shifting,
Control circuit under-voltage protection. (Note1)
For low-side IGBTs
Gate drive circuit, Short-Circuit protection, Control supply circuit under-voltage protection.
Fault signaling
Corresponding to a SC fault or a UV fault .
Input interface
5V CMOS/LSTTL compatible, Schmitt trigger input logic.
Note 1
Available bootstrap circuit example is given in Fig. 9.
Pin Descriptions
No. Symbol
Pin
Description
1 V
S1
High - side Bias Voltage Ground for U Phase IGBT Driving
2 V
B1
High - side Bias Voltage for U Phase IGBT Driving
3 V
CC
Supply Voltage Terminal for Driver IC
4
HIN1
Signal Input Terminal for High-side U Phase
5 V
S2
High - side Bias Voltage Ground for V Phase IGBT Driving
6 V
B2
High - side Bias Voltage for V Phase IGBT Driving
7 V
CC
Supply Voltage Terminal for Driver IC
8
HIN2
Signal Input Terminal for High-side V Phase
9 V
S3
High - side Bias Voltage Ground for W Phase IGBT Driving
10 V
B3
High - side Bias Voltage for W Phase IGBT Driving
11 V
CC
Supply Voltage Terminal for Driver IC
12
HIN3
Signal Input Terminal for High-side W Phase
13 NO
No connection (Note 2)
14
LIN1
Signal Input Terminal for Low-side U Phase
15
LIN2
Signal Input Terminal for Low-side V Phase
16
LIN3
Signal Input Terminal for Low-side W Phase
17 FO Fault
Output
Terminal
18
CFO
Capacitor for Fault Output Duration Time Selection
19 CIN Comparator
Input
20 GND Signal
Ground
21 V
CC
Supply Voltage Terminal for Driver IC
22
P
Positive DC-Link Input Terminal
23
U
Output Terminal for U Phase
24
V
Output Terminal for V Phase
25
W
Output Terminal for W Phase
26
N
Negative DC-Link Input Terminal






















TITLE:
ENGINEERING SPEC. OF IPM SDIP 600V 20A
DOCUMENT
NO.
MM23400007
PAGE
REV.
A1
UNLESS OTHERWISE SPECIFIED
TOLERQNCES ON
X =
X.X =
X.XX =
ANGLES
HOLE DIA.
SCALE
X
UNIT
X
APPROVED BY
DRAWN BY
DESIGNED BY
CHECKED BY
THIS DRAWINGS AND SPECIFICATIONS ARE THE PROPERTY OF CYNTEC CO., LTD.
AND SHALL NOT BE REPRODUCED OR USED AS THE BASIS FOR THE
MANUFACTURE OR SALE OF APPARATUS OR DEVICES WITHOUT PERMISSION
CYNTEC CO., LTD.
PAGE 3 OF 14

Fig. 1 The SDIP-IPM Internal Block Diagram
Note 2 : Don't connect Pin 13
to any other terminals or PCB pattern.










TITLE:
ENGINEERING SPEC. OF IPM SDIP 600V 20A
DOCUMENT
NO.
MM23400007
PAGE
REV.
A1
UNLESS OTHERWISE SPECIFIED
TOLERQNCES ON
X =
X.X =
X.XX =
ANGLES
HOLE DIA.
SCALE
X
UNIT
X
APPROVED BY
DRAWN BY
DESIGNED BY
CHECKED BY
THIS DRAWINGS AND SPECIFICATIONS ARE THE PROPERTY OF CYNTEC CO., LTD.
AND SHALL NOT BE REPRODUCED OR USED AS THE BASIS FOR THE
MANUFACTURE OR SALE OF APPARATUS OR DEVICES WITHOUT PERMISSION
CYNTEC CO., LTD.
PAGE 4 OF 14
MAXIMUM RATINGS
(T
j
= 25
)
INVERTER PART
Item Symbol
Min.
Max.
Unit
Between collector to emitter voltage
V
CES
(IGBT) -
600
V
Each IGBT collector current
I
C
( Tc =
25
) -
20
A
Each IGBT collector current (peak)
I
CP
( Tc =
25
, pulse
) -
40
A
Junction temperature
T
j
(Note 3) -20
+125
Note 3
The maximum junction temperature rating of the power chip integrated within the IPM is 150
C (@ Tc
100
C). However,
It would be recommended that the average junction temperature should be limited to
T
j
125
C (@ Tc
100
C) in order to
guarantee safe operation.
CONTROL PART
Item Symbol
Min.
Max.
Unit
Driver IC supply voltage
V
CC
-0.3 20 V
P - side floating supply voltage
V
B1S1,B2S2,B3S3
-0.3 20 V
Current sensing input voltage
V
CIN
-0.3 Vcc+0.3 V
Logic input voltage
HIN1,HIN2,HIN3,
LIN1,LIN2,LIN3
-0.3 5.5 V
Fault output voltage
V
FO
-0.3 Vcc+0.3 V
Fault output current
I
FO
- 10
mA
TOTAL SYSTEM
Item Symbol
Min.
Max.
Unit
Module case operating temperature
T
C
(Note 4)
-20 +100
Storage temperature
T
stg
-40 +125
Isolation voltage (60Hz Sinusoidal, AC 1
minute, pins to heat-sink plate)
V
iso
- 2500
Vrms
Note 4
Tc Measurement Point
TITLE:
ENGINEERING SPEC. OF IPM SDIP 600V 20A
DOCUMENT
NO.
MM23400007
PAGE
REV.
A1
UNLESS OTHERWISE SPECIFIED
TOLERQNCES ON
X =
X.X =
X.XX =
ANGLES
HOLE DIA.
SCALE
X
UNIT
X
APPROVED BY
DRAWN BY
DESIGNED BY
CHECKED BY
THIS DRAWINGS AND SPECIFICATIONS ARE THE PROPERTY OF CYNTEC CO., LTD.
AND SHALL NOT BE REPRODUCED OR USED AS THE BASIS FOR THE
MANUFACTURE OR SALE OF APPARATUS OR DEVICES WITHOUT PERMISSION
CYNTEC CO., LTD.
PAGE 5 OF 14
THERMAL RESISTANCE
Item Symbol Condition
Min.
Typ.
Max.
Unit
R
th(j-c)
Q
IGBT part (1/6)
-
-
1.38
Junction to case thermal
resistance
R
th(j-c)
F
FWD part (1/6)
-
-
2.07
/W
ELECTRICAL CHARACTERISTICS
(T
j
= 25
)
INVERTER PART
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Collector-emitter saturation
voltage
V
CE (sat)
V
CC
= V
B1S1,B2S2,B3S3
= 15V,
I
C
= 20A, V
CIN
= 0V
T
j
=25
- 2.30
3.00
V
FWD forward voltage drop
V
F
T
j
=25
, - I
C
= 20A, V
CIN
= 5V
-
2.05
2.65
V
T
on
- 0.80
1.30
T
r
- 0.06
0.12
T
off
- 1.08
1.60
Switching times
(Fig. 2)
T
f
V
D
= 300V,
V
CC
= V
B1S1,B2S2,B3S3
= 15V,
I
C
= 20A, T
j
=25
,
V
IN
= 5V <
> 0V,
V
CIN
= 0V, Inductive Load
- 0.06
0.30
s
Collector-emitter cut-off
current
I
CES
V
CE
=V
CES
- -
0.09
mA

Fig. 2 Switching time define













TITLE:
ENGINEERING SPEC. OF IPM SDIP 600V 20A
DOCUMENT
NO.
MM23400007
PAGE
REV.
A1
UNLESS OTHERWISE SPECIFIED
TOLERQNCES ON
X =
X.X =
X.XX =
ANGLES
HOLE DIA.
SCALE
X
UNIT
X
APPROVED BY
DRAWN BY
DESIGNED BY
CHECKED BY
THIS DRAWINGS AND SPECIFICATIONS ARE THE PROPERTY OF CYNTEC CO., LTD.
AND SHALL NOT BE REPRODUCED OR USED AS THE BASIS FOR THE
MANUFACTURE OR SALE OF APPARATUS OR DEVICES WITHOUT PERMISSION
CYNTEC CO., LTD.
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