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Datasheet: 1N914/A52R (Continental Device India)

Diode Do-35

 

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Continental Device India

Document Outline

DATA SHEET
Product specification
Supersedes data of 1996 Sep 03
1999 May 26
DISCRETE SEMICONDUCTORS
1N914
High-speed diode
M3D176
1999 May 26
2
Philips Semiconductors
Product specification
High-speed diode
1N914
FEATURES
Hermetically sealed leaded glass
SOD27 (DO-35) package
High switching speed: max. 4 ns
Continuous reverse voltage:
max. 75 V
Repetitive peak reverse voltage:
max. 100 V
Repetitive peak forward current:
max. 225 mA.
APPLICATIONS
High-speed switching.
DESCRIPTION
The 1N914 is a high-speed switching diode fabricated in planar technology, and
encapsulated in a hermetically sealed leaded glass SOD27 (DO-35) package.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
The diode is type branded.
handbook, halfpage
MAM246
k
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
repetitive peak reverse voltage
-
100
V
V
R
continuous reverse voltage
-
75
V
I
F
continuous forward current
see Fig.2; note 1
-
75
mA
I
FRM
repetitive peak forward current
-
225
mA
I
FSM
non-repetitive peak forward current
square wave; T
j
= 25
C prior to
surge; see Fig.4
t = 1
s
-
4
A
t = 1 ms
-
1
A
t = 1 s
-
0.5
A
P
tot
total power dissipation
T
amb
= 25
C; note 1
-
250
mW
T
stg
storage temperature
-
65
+200
C
T
j
junction temperature
-
175
C
1999 May 26
3
Philips Semiconductors
Product specification
High-speed diode
1N914
ELECTRICAL CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed circuit-board without metallization pad.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
V
F
forward voltage
I
F
= 10 mA; see Fig.3
1
V
I
R
reverse current
see Fig.5
V
R
= 20 V
25
nA
V
R
= 75 V
5
A
V
R
= 20 V; T
j
= 150
C
50
A
C
d
diode capacitance
f = 1 MHz; V
R
= 0; see Fig.6
4
pF
t
rr
reverse recovery time
when switched from I
F
= 10 mA to
I
R
= 10 mA; R
L
= 100
; measured at
I
R
= 1 mA; see Fig.7
8
ns
when switched from I
F
= 10 mA to
I
R
= 60 mA; R
L
= 100
; measured at
I
R
= 1 mA; see Fig.7
4
ns
V
fr
forward recovery voltage
when switched from I
F
= 50 mA; t
r
= 20 ns;
see Fig.8
2.5
V
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
thermal resistance from junction to tie-point
lead length 10 mm
240
K/W
R
th j-a
thermal resistance from junction to ambient
lead length 10 mm; note 1
500
K/W
1999 May 26
4
Philips Semiconductors
Product specification
High-speed diode
1N914
GRAPHICAL DATA
Fig.2
Maximum permissible continuous forward
current as a function of ambient
temperature.
0
200
100
0
50
MGD289
100
IF
(mA)
T ( C)
amb
o
Device mounted on an FR4 printed-circuit board; lead length 10 mm.
Fig.3
Forward current as a function of forward
voltage.
(1) T
j
= 175
C; typical values.
(2) T
j
= 25
C; typical values.
(3) T
j
= 25
C; maximum values.
handbook, halfpage
0
1
2
600
0
200
400
MBG464
VF (V)
IF
(mA)
(1)
(2)
(3)
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Based on square wave currents.
T
j
= 25
C prior to surge.
handbook, full pagewidth
MBG704
10
tp (
s)
1
IFSM
(A)
10
2
10
-
1
10
4
10
2
10
3
10
1
1999 May 26
5
Philips Semiconductors
Product specification
High-speed diode
1N914
Fig.5
Reverse current as a function of junction
temperature.
handbook, halfpage
0
100
Tj (
o
C)
200
10
3
10
2
10
-
1
10
-
2
10
(1)
(2)
1
IR
(
A)
MGD006
(3)
(1) V
R
= 75 V; maximum values.
(2) V
R
= 75 V; typical values.
(3) V
R
= 20 V; typical values.
Fig.6
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
j
= 25
C.
handbook, halfpage
0
10
20
1.2
1.0
0.6
0.4
0.8
MGD004
VR (V)
Cd
(pF)
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