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Datasheet: 2N2369A (Boca Semiconductor Corporation)

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

 

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Boca Semiconductor Corporation
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
2N2369
2N2369A
TO-18
APPLICATIONS
2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With
Low Power & High Speed Switching Applications.
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
VALUE
UNIT
Collector -Emitter Voltage
VCEO
15
V
Collector -Emitter Voltage
VCES
40
V
Collector -Base Voltage
VCBO
40
V
Emitter -Base Voltage
VEBO
4.5
V
Collector Current Continuous
IC
200
mA
Collector Current Peak(10us pulse)
IC(peak)
500
mA
Power Dissipation@ Ta=25 degC
PD
360
mW
Derate Above 25 deg C
2.06
mW/deg C
@Tc=25 deg C
PD
1.2
W
@Tc=100 deg C
PD
0.68
W
Derate Above100 deg C
6.85
mW/deg C
Operating And Storage Junction
Tj, Tstg
-65 to +200
deg C
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL
TEST CONDITION
2N2369 2N2369A
UNIT
Collector -Emitter Voltage
VCEO*(sus)IC=10mA, IB=0
>15
>15
V
Collector -Emitter Voltage
VCES
IC=10uA, VBE=0
>40
>40
V
Collector -Base Voltage
VCBO
IC=10uA, IE=0
>40
>40
V
Emitter -Base Voltage
VEBO
IE=10uA, IC=0
>4.5
>4.5
V
Collector-Cut off Current
ICBO
VCB=20V, IE=0
<400
-
nA
VCB=20V, IE=0, Ta=150 deg C
<30
-
uA
ICES
VCE=20V, VBE=0
-
<400
nA
Base Current
IB
VCE=20V, VBE=0
-
<400
nA
Collector Emitter Saturation Voltage
VCE(Sat)* IC=10mA,IB=1mA
<0.25
<0.20
V
IC=30mA,IB=3mA
-
<0.25
V
IC=100mA,IB=10mA
-
<0.50
V
IC=10mA,IB=1mA,Ta= +125 deg C -
<0.30
V
Base Emitter Saturation Voltage
VBE(Sat) * IC=10mA,IB=1mA
0.7-0.85 0.7-0.85
V
IC=30mA,IB=3mA
-
<1.15
V
IC=100mA,IB=10mA
-
<1.60
V
IC=10mA,IB=1mA,Ta= +125 deg C -
>0.59
V
IC=10mA,IB=1mA, Ta= -55 deg C
-
<1.02
V
DC Current
hFE*
IC=10mA, VCE=1V
40-120 40-120
IC=10mA,VCE=1V, Ta= -55 deg C
>20
-
IC=10mA,VCE=0.35V, Ta= -55 deg C
-
>20
IS/ISO 9002
Lic# QSC/L- 000019.2
IS / IECQC 700000
IS / IECQC 750100
Continental Device India Limited
Data Sheet
Page 1 of 3
Boca Semiconductor Corp.
BSC
http://www.bocasemi.com page : 1
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
2N2369/2369A
DESCRIPTION
SYMBOL
TEST CONDITION
2N2369 2N2369A
UNIT
DC Current
hFE*
IC=10mA,VCE=0.35V
-
40-120
IC=30mA,VCE=0.4V
-
>30
IC=100mA,VCE=1V
-
>20
IC=100mA,VCE=2V
>20
-
Small Signal Characteristics
Transition Frequency
ft
VCE=10V,IC=10mA, f=100MHz
>500
>500
MHZ
Output Capacitance
Cobo
VCB=5V, IE=0, f=140kHz
<4.0
<4.0
pF
Turn on Time
ton
IC=10mA, IB1=3mA,
<12
<12
ns
IB= -1.5mA, VCC=3V
Turn off Time
toff
IC=10mA, IB1=3mA,
-
<15
ns
IB2= -1.5mA, VCC=3V
Storage Time
ts
IC=100mA, IB1=IB=10mA, VCC=10V <13
<13
ns
*Pulse Test : Pulse Width =300us, Duty Cycle=2%
TO-18 Metal Can Package
TO-18
1K/polybag
350 gm/1K pcs
3" x 7.5" x 7.5"
5.0K
17" x 15" x 13.5"
80.0K
34 kgs
PACKAGE
Net Weight/Qty
Details
STANDARD PACK
INNER CARTON BOX
Qty
OUTER CARTON BOX
Qty
Gr Wt
Size
Size
Packing Detail
G
1
2
3
H
J
L
F
A
D
B
E
C
K
DIM
M IN
M A X
A
l
l

d
i
m
i
ns
i
ons
i
n
m
m
.
A
5.24
5.84
B
4.52
4.97
C
4.31
5.33
D
0.40
0.53
E
--
0.76
F
--
1.27
G
--
2.97
H
0.91
1.17
J
0.71
1.21
K
12.70
--
L
45 DE G
PIN CONFIGURATION
1. EM ITTER
2. BASE
3. COLLECTOR
1
2
3
Continental Device India Limited
Data Sheet
Page 2 of 3
http://www.bocasemi.com page : 2
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