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Datasheet: AV2222 (Avic Technology)

Amplifier Transistors Pn Silicon

 

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Avic Technology
Copyright @vic Electronics Corp. 1 Website: http://www.avictek.com
Amplifier Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector Emitter Voltage
VCEO
40
Vdc
Collector Base Voltage
VCBO
75
Vdc
Emitter Base Voltage
VEBO
6.
5
Vdc
Collector Current -- Continuous
IC
600
mAdc
Total Device Dissipation @ TA = 25
C
Derate above 25
C
PD
625
5.0
mW
mW/
C
Total Device Dissipation @ TC = 25
C
Derate above 25
C
PD
1.5
12
Watts
mW/
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
55 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R
q
JA
200
C/W
Thermal Resistance, Junction to Case
R
q
JC
83.3
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
V(BR)CEO
40
--
Vdc
Collector Base Breakdown Voltage
(IC = 10
m
Adc, IE = 0)
V(BR)CBO
75
--
Vdc
Emitter Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0)
V(BR)EBO
6.0
--
Vdc
Collector Cutoff Current
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
ICEX
--
10
nAdc
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0, TA = 150
C)
ICBO
--
--
0.01
10
Adc
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
IEBO
--
10
nAdc
Collector Cutoff Current
(VCE = 10 V)
ICEO
--
10
nAdc
Base Cutoff Current
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
IBEX
--
20
nAdc
AV2222
@vic
2N2222
TO92
1
2
3
COLLECTOR
3
2
BASE
1
EMITTER
AV2222
Copyright @vic Electronics Corp. 2 Website: http://www.avictek.com
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc, TA = 55
C)
(IC = 150 mAdc, VCE = 10 Vdc)(1)
(IC = 150 mAdc, VCE = 1.0 Vdc)(1)
(IC = 500 mAdc, VCE = 10 Vdc)(1)
hFE
35
50
75
35
100
50
40
--
--
--
--
300
--
--
--
Collector Emitter Saturation Voltage(1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
--
--
0.3
1.0
Vdc
Base Emitter Saturation Voltage(1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VBE(sat)
0.6
--
1.2
2.0
Vdc
SMALL SIGNAL CHARACTERISTICS
Current Gain -- Bandwidth Product(2)
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
fT
300
--
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
--
8.0
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
--
25
pF
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hie
2.0
0.25
8.0
1.25
k
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hre
--
--
8.0
4.0
X 10 4
SmallSignal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
50
75
300
375
--
Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hoe
5.0
25
35
200
m
mhos
Collector Base Time Constant
(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz)
rb
Cc
--
150
ps
Noise Figure
(IC = 100
m
Adc, VCE = 10 Vdc, RS = 1.0 k
, f = 1.0 kHz)
NF
--
4.0
dB
SWITCHING CHARACTERISTICS
Delay Time
(VCC = 30 Vdc, VBE(off) = 2.0 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1)
td
--
10
ns
Rise Time
(VCC = 30 Vdc, VBE(off) = 2.0 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1)
tr
--
25
ns
Storage Time
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc) (Figure 2)
ts
--
225
ns
Fall Time
IB1 = IB2 = 15 mAdc) (Figure 2)
tf
--
60
ns
1. Pulse Test: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
2. fT is defined as the frequency at which |hfe| extrapolates to unity.
@vic
AV2222
Copyright @vic Electronics Corp. 3 Website: http://www.avictek.com
Figure 1. TurnOn Time
Figure 2. TurnOff Time
SWITCHING TIME EQUIVALENT TEST CIRCUITS
Scope rise time < 4 ns
*Total shunt capacitance of test jig,
connectors, and oscilloscope.
+16 V
2 V
< 2 ns
0
1.0 to 100
s,
DUTY CYCLE
2.0%
1 k
+ 30 V
200
CS* < 10 pF
+16 V
14 V
0
< 20 ns
1.0 to 100
s,
DUTY CYCLE
2.0%
1 k
+ 30 V
200
CS* < 10 pF
4 V
1N914
1000
10
20
30
50
70
100
200
300
500
700
1.0 k
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0
10
20
30
50
70
100
200
300
500 700
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
h
FE
, DC CURRENT
GAIN
V
CE
, COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
1.0
0.8
0.6
0.4
0.2
0
0.005
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
20
30
50
IB, BASE CURRENT (mA)
Figure 4. Collector Saturation Region
TJ = 125
C
TJ = 25
C
25
C
55
C
IC = 1.0 mA
10 mA
150 mA
500 mA
VCE = 1.0 V
VCE = 10 V
@vic
AV2222
Copyright @vic Electronics Corp. 4 Website: http://www.avictek.com
Figure 5. Turn On Time
IC, COLLECTOR CURRENT (mA)
70
100
200
50
t,
TIME (ns)
10
20
70
5.0
100
5.0 7.0
30
50
200
10
30
7.0
20
IC/IB = 10
TJ = 25
C
tr @ VCC = 30 V
td @ VEB(off) = 2.0 V
td @ VEB(off) = 0
3.0
2.0
300
500
500
t,
TIME (ns)
5.0
7.0
10
20
30
50
70
100
200
300
Figure 6. Turn Off Time
IC, COLLECTOR CURRENT (mA)
10
20
70
100
5.0 7.0
30
50
200
300
500
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25
C
t
s = ts 1/8 tf
tf
Figure 7. Frequency Effects
f, FREQUENCY (kHz)
4.0
6.0
8.0
10
2.0
0.1
Figure 8. Source Resistance Effects
RS, SOURCE RESISTANCE (OHMS)
NF
, NOISE FIGURE (dB)
1.0 2.0
5.0 10
20
50
0.2
0.5
0
100
NF
, NOISE FIGURE (dB)
0.01 0.02
0.05
RS = OPTIMUM
RS =
SOURCE
RS =
RESISTANCE
IC = 1.0 mA, RS = 150
500
A, RS = 200
100
A, RS = 2.0 k
50
A, RS = 4.0 k
f = 1.0 kHz
IC = 50
A
100
A
500
A
1.0 mA
4.0
6.0
8.0
10
2.0
0
50
100
200
500
1.0 k 2.0 k
5.0 k 10 k 20 k
50 k 100 k
Figure 9. Capacitances
REVERSE VOLTAGE (VOLTS)
3.0
5.0
7.0
10
2.0
0.1
CAP
ACIT
ANCE (pF)
1.0
2.0 3.0
5.0 7.0 10
20 30
50
0.2 0.3
0.5 0.7
Ccb
20
30
Ceb
Figure 10. CurrentGain Bandwidth Product
IC, COLLECTOR CURRENT (mA)
70
100
200
300
50
500
f T
, CURRENTGAIN BANDWIDTH PRODUCT
(MHz)
1.0
2.0
3.0
5.0 7.0
10
20
30
50
70 100
VCE = 20 V
TJ = 25
C
@vic
AV2222
Corpright @vic Electronics Corp. 5 Website: http://www.avictek.com
Figure 11. "On" Voltages
IC, COLLECTOR CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
V
, VOL
T
AGE (VOL
TS)
0
TJ = 25
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = 10 V
Figure 12. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
0.5
0
+0.5
COEFFICIENT
(mV/ C)
1.0
1.5
2.5
R
q
VC for VCE(sat)
R
q
VB for VBE
0.1
1.0 2.0
5.0
10 20
50
0.2
0.5
100 200
500 1.0 k
1.0 V
2.0
0.1
1.0 2.0
5.0
10
20
50
0.2
0.5
100 200
500
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