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Datasheet: AV13001 (Avic Technology)

Npn Epitaxial Silicon Transistor

 

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Avic Technology
@vic
AV13001
NPN EPITAXIAL SILICON TRANSISTOR
QW-R201-055
,A
FEATURES
* Collector-Base Voltage: V(BR)
CBO
=600V
* Collector Current: I
C
=0.2A
TO-92
1
1: BASE 2: COLLECTOR 3: EMITTER

ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL
RATING
UNIT
Collector-base voltage
V
CBO
600 V
Collector-emitter voltage
V
CEO
400 V
Emitter-base voltage
V
EBO
7 V
Collector current
Ic
200
mA
Collector power dissipation
Pc
750
mW
Junction Temperature
T
j
150
C
Storage Temperature
T
STG
-55 ~ +150
C

ELECTRICAL CHARACTERISTICS
(Tc=25
C)
PARAMETER
SYMBOL
TEST
CONDITIONS
MIN
TYP MAX UNIT
Collector-Base Breakdown Voltage
V(BR)
CBO
I
C
=100
A, I
E
=0
600
V
Collector-Emitter Breakdown
Voltage
V(BR)
CEO
Ic=1mA, I
B
=0 400
V
Emitter-Base Breakdown Voltage
V(BR)
EBO
I
E
=100
A, I
C
=0
7 V
Collector Cut-off Current
I
CBO
V
CB
=600V, I
E
=0
100
A
Collector Cut-off Current
I
CEO
V
CE
=400V, I
B
=0
200
A
Emitter Cut-off Current
I
EBO
V
EB
=7V, I
C
=0
100
A
h
FE(1)
V
CE
=20V, Ic=20mA
10
70
DC current gain
h
FE(2)
V
CE
=10V, Ic=0.25mA
5
Collector-emitter saturation voltage
V
CE
(sat) Ic=50mA,
I
B
=10mA
0.5
V
Base-emitter Saturation Voltage
V
BE
(sat) Ic=50mA,
I
B
=10mA
1.2
V
Base-emitter Voltage
V
BE
I
E
=100mA
1.1
V
Transition Frequency
f
T
V
CE
=20V, Ic=20mA, f=1MHz
8
MHz
Fall Time
t
F
0.3
s
Storage Time
t
S
Ic=50mA, I
B1
=-I
B2
=5mA,
Vcc=45V
1.5
s
QW-R201-055
,A
CLASSIFICATION OF hFE
RANK A B C D E F G H I J K L
RANGE 10-15
15-20 20-25 25-30
30-35
35-40
40-45
45-50
50-55
55-60 60-65 65-70

TYPICAL CHARACTERISTICS
Figure 1. Staic Characteristic
0
0
2
4
6
8
V
CE
(V) Collector-Emitter Voltage
I
c
(mA)
C
o
l
l
ect
o
r C
u
r
r
e
n
t
20
40
60
80
Figure 2. DC Current Gain
1
10
100
1000
1
10
100
100
10
12
14
16
18
20
IB =120uA
IB =100uA
IB =80uA
IB =60uA
IB =40uA
IB =20uA
I
c
(mA)Collector Current
h
FE
DC Cur
r
ent
G
a
i
n
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
0.01
0.1
1
10
1
10
100
I
c
(mA)Collector Current
V
BE
(sa
t
),
V
CE
(
s
a
t)
,
S
at
ur
at
i
on V
o
lt
ag
e
V
CE
=10V
I
C
=10I
B
Figure 4. Collector Output Capacitance
0.1
1
10
20
1
10
100
V
CB
(V),Collector-Base Voltage
Co
b (
p
F)
, Cap
a
c
i
t
a
n
c
e
I
E
=0
f=1MHz
V
CE
(sat)
V
BE
(sat)
@vic
AV13001
NPN EPITAXIAL SILICON TRANSISTOR
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