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Datasheet: B12-28 (Advanced Semiconductor)

Npn Silicon Rf Power Transistor

 

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Advanced Semiconductor

Document Outline

A D V A N C E D S E M I C O N D U C T O R, I N C.
REV.A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL
MAXIM
UNITS
BV
CBO
I
C
= 200 mA
60
V
BV
CEO
I
C
= 200 mA
35
V
BV
EBO
I
E
= 10 mA
4.0
V
I
CBO
V
CB
= 30 V
250



A
h
FE
V
CE
= 5.0 V I
C
= 500 mA
20
200
---
C
ob
V
CB
= 30 V
f = 1.0 MHz
30
pF
P
G



c
V
CC
= 28 V
P
OUT
= 12 W f = 175 MHz
10.8
50
13
60
dB
%
NPN SILICON RF POWER TRANSISTOR
B12-28
DESCRIPTION:
The
B12-28
is Designed for Class
C
Power
Amplifier Applications up to 250 MHz.
FEATURES:
P
G
= 13 dB Typical at 12 W/175 MHz
Load
VSWR
at Rated Conditions
OmnigoldTM Metallization System
MAXIMUM RATINGS
I
C
3.0 A
V
CB
60 V
P
DISS
27 W @ T
C
= 25
O
C
T
J
-55
O
C to +200
O
C
T
STG
-55
O
C to +150
O
C



JC
6.5
O
C/W
PACKAGE STYLE .380" 4L STUD
ORDER CODE: ASI10801
MINIMUM
inches / mm
.004 / 0.10
.370 / 9.40
.320 / 8.13
B
C
D
E
F
G
A
MAXIMUM
.385 / 9.78
.330 / 8.38
.130 / 3.30
.007 / 0.18
inches / mm
H
.090 / 2.29
.100 / 2.54
DIM
.220 / 5.59
.230 / 5.84
.490 / 12.45
.450 / 11.43
I
J
.155 / 3.94
.175 / 4.45
.750 / 19.05
.980 / 24.89
.100 / 2.54
E
F
D
C
B
.112x45
G
H
J
I
A
#8-32 UNC-2A
C
B
E
E
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