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Datasheet: AF4978NDA (Anachip Corporation)

N-Channel Enhancement Mode Power MOSFET

 

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Anachip Corporation
AF4978N
N-Channel Enhancement Mode Power MOSFET

This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.0 Sep 6, 2005
1/5
Features

- Low Gate Charge
- Single Drive Requirement
- Surface Mount Package
- Pb Free Plating Product
Product Summary
BV
DSS
(V)
R
DS(ON)
(m)
I
D
(A)
60 100 11


Pin Assignments
3
2
1
S
D
G
(Front View)
General Description

The advanced power MOSFET provides the designer
with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.

The TO-252 package is universally preferred for all
commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC
converters.

Pin Descriptions

Pin Name
Description
S Source
G Gate
D Drain
Ordering information
A X
4978N X X
PN
Package
Feature
F: MOSFET
D: TO-252
Packing
Blank : Tube or Bulk
A : Tape & Reel
Block Diagram
S
G
D
AF4978N
N-Channel Enhancement Mode Power MOSFET
Anachip Corp.
www.anachip.com.tw Rev. 1.0 Sep 6, 2005
2/5
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
V
DS
Drain-Source
Voltage
60
V
V
GS
Gate-Source
Voltage
25
V
T
C
=25C 11
I
D
Continuous Drain Current, V
GS
=10V
T
C
=100C 6.8
A
I
DM
Pulsed
Drain
Current
(Note 1)
45
A
Total Power Dissipation
21
W
P
D
Linear Derating Factor
T
C
=25C
0.17 W/C
T
STG
Storage Temperature Range
-55 to 150
C
T
J
Operating Junction Temperature Range
-55 to 150
C
Thermal Data
Symbol
Parameter
Maximum
Units
R
JC
Thermal
Resistance
Junction-Case
Max.
6
C/W
R
JA
Thermal
Resistance
Junction-
Ambient
Max.
110
C/W
Electrical Characteristics
at T
J
=25C unless otherwise specified
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BV
DSS
Drain-Source
Breakdown
Voltage V
GS
=0V, I
D
=250uA 60
- -
V
BV
DSS
/
T
J
Breakdown Voltage Temperature
Coefficient
Reference to 25
o
C,
I
D
=1mA
- 0.04 - V/
o
C
V
GS
=10V, I
D
=5A -
-
100
R
DS(ON)
Static Drain-Source
On-Resistance
(Note 2)
V
GS
=4.5V, I
D
=4A -
-
125
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA 1 - 3 V
g
fs
Forward
Transconductance V
DS
=10V, I
D
=5A -
7
-
S
Drain-Source Leakage Current
(T
J
=25
o
C)
V
DS
=60V, V
GS
=0V -
-
10
I
DSS
Drain-Source Leakage Current
(T
J
=150
o
C)
V
DS
=48V, V
GS
=0V -
-
25
uA
I
GSS
Gate-Source
Leakage
V
GS
=25V -
-
100
nA
Q
g
Total
Gate
Charge
(Note 2)
-
6
10
Q
gs
Gate-Source
Charge
- 2 -
Q
gd
Gate-Drain
("Miller")
Charge
I
D
=5A,
V
DS
=48V,
V
GS
=4.5V
- 3 -
nC
t
d(on)
Turn-On Delay Time
(Note 2)
-
6
-
t
r
Rise
Time
- 11 -
t
d(off)
Turn-Off Delay Time
-
14
-
t
f
Fall-Time
V
DS
=30V,
I
D
=5A,
R
G
=3.3, V
GS
=10V
R
D
=6
- 2 -
ns
C
iss
Input
Capacitance
- 485
780
C
oss
Output
Capacitance
- 55 -
C
rss
Reverse
Transfer
Capacitance
V
GS
=0V,
V
DS
=25V,
f=1.0MHz
- 40 -
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
SD
Forward On Voltage
(Note 2)
I
S
=5A, V
GS
=0V -
-
1.2
V
t
rr
Reverse
Recovery
Time
- 23 - ns
Q
rr
Reverse Recovery Charge
I
S
=5A, V
GS
=0V,
dl/dt=100A/s
- 28 - nC
Note 1: Pulse width limited by Max. junction temperature.
Note 2: Pulse width 300us, duty cycle 2%.
AF4978N
N-Channel Enhancement Mode Power MOSFET
Anachip Corp.
www.anachip.com.tw Rev. 1.0 Sep 6, 2005
3/5
Typical Performance Characteristics
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
AF4978N
N-Channel Enhancement Mode Power MOSFET
Anachip Corp.
www.anachip.com.tw Rev. 1.0 Sep 6, 2005
4/5
Typical Performance Characteristics (Continued)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
AF4978N
N-Channel Enhancement Mode Power MOSFET
Anachip Corp.
www.anachip.com.tw Rev. 1.0 Sep 6, 2005
5/5
Marking Information
TO-252
Logo
Part Number
YY : Year
WW: Nth week
X : Internal code ( Optional)
( Top View)
4978N
YYWWX
Package Information
Package Type: TO-252
D1
D
E2
E1
F
(0.1mm)
C
A2
F1
e
e
B1
A3
R: 0.127~0.381
1. All Dimensions Are in Millimeters.
2. Dimension Does Not Include Mold Protrusions.
E3

Dimensions In Millimeters
Symbol
Min.
Nom.
Max.
A2 1.80 2.30 2.80
A3 0.40 0.50 0.60
B1 0.40 0.70 1.00
D
6.00 6.50 7.00
D1 4.80 5.35 5.90
F
2.20 2.63 3.05
F1 0.50 0.85 1.20
E1 5.10 5.70 6.30
E2 0.50 1.10 1.70
E3 3.50 4.00 4.50
e
- 2.30 -
C
0.35 0.50 0.65
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