HTML datasheet архив (поиск документации на электронные компоненты) Поиск даташита (1.687.043 компонентов)
Где искать

Datasheet: AF4910NS (Anachip Corporation)

Dual N-Channel 30-V (D-S) MOSFET

 

Скачать: PDF   ZIP
Anachip Corporation
AF4910N
Dual N-Channel 30-V (D-S) MOSFET

This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.1 Jul 20, 2004
1/5
Features

-Low r
DS(on)
Provides Higher Efficiency and Extends
Battery Life
-Miniature SO-8 Surface Mount Package Saves
Board Space
-High power and current handling capability
-Low side high current DC-DC Converter
applications

Product Summary
V
DS
(V)
r
DS(on)
(m)
I
D
(A)
13.5@V
GS
=10V
10
30
20@V
GS
=4.5V
8


Pin Assignments
SOP-8
5
6
7
8
4
3
2
1
D1
D1
D2
D2
S1
G1
S2
G2
General Description

These miniature surface mount MOSFETs utilize
High Cell Density process. Low r
DS(on)
assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are PWM DC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.





Pin Descriptions

Pin Name
Description
S1/2
Channel
1/2
Source
G1/2
Channel 1/2 Gate
D1/2
Channel 1/2 Drain

Ordering information
A X 4910N X X X
PN
Package
Feature
F :MOSFET
S: SOP-8
Lead Free
Blank : Normal
L : Lead Free Package
Packing
Blank : Tube or Bulk
A : Tape & Reel
AF4910N
Dual N-Channel 30-V (D-S) MOSFET
Anachip Corp.
www.anachip.com.tw Rev. 1.1 Jul 20, 2004
2/5
Absolute Maximum Ratings
(T
A
=25C unless otherwise noted)
Symbol
Parameter
Rating
Units
V
DS
Drain-Source
Voltage
30
V
V
GS
Gate-Source
Voltage
20
V
T
A
=25C 10
I
D
Continuous
Drain
Current
(Note 1)
T
A
=70C 8.2
A
I
DM
Pulsed Drain Current
(Note 2)
50
A
I
S
Continuous Source Current (Diode Conduction)
(Note 1)
2.3
A
T
A
=25C 2.1
P
D
Power
Dissipation
(Note 1)
T
A
=70C 1.3
W
T
J
, T
STG
Operating Junction and Storage Temperature Range
-55 to 150
C
Thermal Resistance Ratings
Symbol
Parameter
Maximum
Units
R
JC
Maximum
Junction-to-Case
(Note 1)
t
<
5 sec
40
C/W
R
JA
Maximum
Junction-to-Ambient
(Note 1)
t
<
5 sec
60
C/W
Note 1: surface Mounted on 1"x 1" FR4 Board.
Note 2:
Pulse width limited by maximum junction temperature
Specifications
(T
A
=25C unless otherwise noted)
Limits
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
(BR)DSS
Drain-Source breakdown Voltage
V
GS
=0V, I
D
=250uA 30
-
-
V
V
GS(th)
Gate-Threshold
Voltage
V
DS
= V
GS
, I
D
=250uA 1
1.95
3.0
V
I
GSS
Gate-Body
Leakage
V
DS
=0V, V
GS
=20V -
-
100
nA
V
DS
=24V, V
GS
=0V -
-
1
I
DSS
Zero Gate Voltage Drain Current
V
DS
=24V, V
GS
=0V,
T
J
=55C
- - 25
uA
I
D(on)
On-State
Drain
Current
(Note 3)
V
DS
=5V, V
GS
=10V 20
-
-
A
V
GS
=10V, I
D
=10A -
11
13.5
V
GS
=4.5V, I
D
=8A -
15
20
r
DS(on)
Drain-Source
On-Resistance
(Note 3)
V
GS
=10V, I
D
=15A,
T
J
=55C
- 12.5 15
m
g
fs
Forward
Tranconductance
(Note 3)
V
DS
=15V, I
D
=10A -
40
-
S
V
SD
Diode
Forward
Voltage
I
S
=2.3A, V
GS
=0V -
0.7
1.1
V
Dynamic
(Note 4)
Q
g
Total Gate Charge
-
20
34
Q
gs
Gate-Source
Charge
-
7.0
-
Q
gd
Gate-Drain
Charge
V
DS
=15V, V
GS
=5V,
I
D
=10A
- 7.0 -
nC
Switching
t
d(on)
Turn-On Delay Time
-
20
30
t
r
Rise
Time
- 9 20
t
d(off)
Turn-Off
Delay
Time
-
70 102
t
f
Fall-Time
V
DD
=25, R
L
=25,
I
D
=1A, V
GEN
=10V
- 20 81
t
rr
Source-Ddrain Reverse Recovery Time
I
F
=2.3A, Di/Dt=100A/us
-
41
80
nS
Note 3: Pulse test: PW < 300us duty cycle < 2%.
Note 4:
Guaranteed by design, not subject to production testing.
AF4910N
Dual N-Channel 30-V (D-S) MOSFET
Anachip Corp.
www.anachip.com.tw Rev. 1.1 Jul 20, 2004
3/5
Typical Performance Characteristics
AF4910N
Dual N-Channel 30-V (D-S) MOSFET
Anachip Corp.
www.anachip.com.tw Rev. 1.1 Jul 20, 2004
4/5
Typical Performance Characteristics
AF4910N
Dual N-Channel 30-V (D-S) MOSFET
Anachip Corp.
www.anachip.com.tw Rev. 1.1 Jul 20, 2004
5/5
Marking Information
SOP-8L
( Top View )
1
8
4 9 1 0 N
AA Y W X
Year code:
Part Number
Lot code:
Week code:
Factory code
"A~Z": 01~26;
"A~Z": 27~52
"4" =2004
~
"A~Z": 01~26;
"A~Z": 27~52
"X": Non-Lead Free; "X": Lead Free
Logo
Package Information
Package Type: SOP-8L
VIEW "A"
L
C
VIEW "A"
H
E
A
A2
A1
B
e
D
7 (4X)
0.015x45
7 (4X)
y
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
Nom.
Max.
Min.
Nom.
Max.
A 1.40 1.60 1.75 0.055 0.063 0.069
A1
0.10 - 0.25
0.040 - 0.100
A2 1.30 1.45 1.50 0.051 0.057 0.059
B 0.33 0.41 0.51 0.013 0.016 0.020
C 0.19 0.20 0.25 0.0075
0.008
0.010
D 4.80 5.05 5.30 0.189 0.199 0.209
E 3.70 3.90 4.10 0.146 0.154 0.161
e - 1.27 - - 0.050 -
H 5.79 5.99 6.20 0.228 0.236 0.244
L 0.38 0.71 1.27 0.015 0.028 0.050
y - - 0.10 - - 0.004
0
O
- 8
O
0
O
- 8
O
© 2018 • ChipFind
Контакты
Главная страница