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Datasheet: AF4835PSL (Anachip Corporation)

P-Channel Enhancement Mode Power MOSFET

 

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Anachip Corporation
AF4835P
P-Channel Enhancement Mode Power MOSFET

This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.2 Nov 19, 2004
1/6
Features

- Simple Drive Requirement
- Low On-resistance
- Fast Switching

Product Summary
BV
DSS
(V)
R
DS(ON)
(m)
I
D
(A)
-30 20 -8


Pin Assignments
SOP-8
5
6
7
8
4
3
2
1
D
D
D
D
S
S
S
G
General Description

The advanced power MOSFET provides the designer
with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.

The SOP-8 package is universally preferred for all
commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC
converters.



Pin Descriptions

Pin Name
Description
S Source
G Gate
D Drain

Ordering information
A X 4835P X X X
PN
Package
Feature
F :MOSFET
S: SOP-8
Lead Free
Blank : Normal
L : Lead Free Package
Packing
Blank : Tube or Bulk
A : Tape & Reel
AF4835P
P-Channel Enhancement Mode Power MOSFET
Anachip Corp.
www.anachip.com.tw Rev. 1.2 Nov 19, 2004
2/6
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
V
DS
Drain-Source
Voltage
-30
V
V
GS
Gate-Source
Voltage
20
V
T
A
=25C -8
I
D
Continuous Drain Current
(Note 1)
T
A
=70C -6
A
I
DM
Pulsed
Drain
Current
(Note 2)
-50
A
Total Power Dissipation
2.5
W
P
D
Linear Derating Factor
T
A
=25C
0.02 W/C
T
STG
Storage Temperature Range
-55 to 150
C
T
J
Operating Junction Temperature Range
-55 to 150
C
Thermal Data
Symbol
Parameter
Maximum
Units
Rthj-amb Thermal
Resistance
Junction-ambient
(Note 1)
Max.
50 C/W
Electrical Characteristics
at T
J
=25C unless otherwise specified
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BV
DSS
Drain-Source
Breakdown
Voltage V
GS
=0V, I
D
=-250uA -30 - - V
BV
DSS
/
T
J
Breakdown Voltage Temperature
Coefficient
Reference to 25
o
C,
I
D
=-1mA
- -0.037 - V/
o
C
V
GS
=-10V, I
D
=-8A - - 20
R
DS(ON)
Static Drain-Source
On-Resistance
(Note 3)
V
GS
=-4.5V, I
D
=-5A - - 35
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=-250uA
-1 - -3
V
g
fs
Forward
Transconductance V
DS
=-15V, I
D
=-8A -
20
-
S
Drain-Source Leakage Current
(T
J
=25
o
C)
V
DS
=-30V, V
GS
=0V - - -1
I
DSS
Drain-Source Leakage Current
(T
J
=70
o
C)
V
DS
=-24V, V
GS
=0V - - -25
uA
I
GSS
Gate-Source
Leakage
V
GS
=20V -
-
100
nA
Q
g
Total
Gate
Charge
(Note 3)
-
36
-
Q
gs
Gate-Source
Charge
- 5.5 -
Q
gd
Gate-Drain
("Miller")
Charge
I
D
=-4.6A,
V
DS
=-15V,
V
GS
=-10V
- 3.5 -
nC
t
d(on)
Turn-On Delay Time
(Note 3)
-
12
-
t
r
Rise
Time
- 8 -
t
d(off)
Turn-Off Delay Time
-
75
-
t
f
Fall-Time
V
DS
=-15V,
I
D
=-1A,
R
G
=6, V
GS
=-10V
R
D
=15
- 40 -
ns
C
iss
Input
Capacitance
- 1530 -
C
oss
Output
Capacitance
- 900 -
C
rss
Reverse Transfer Capacitance
V
GS
=0V,
V
DS
=-15V,
f=1.0MHz
- 280 -
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
S
Continuous Source Current
(Body Diode)
V
D
=V
G
=0V, V
S
=-1.2V - -
-2.08
A
V
SD
Forward On Voltage
(Note 3)
T
J
=25
o
C, I
S
=-2.1A,
V
GS
=0V
- -0.75
-1.2 V
Note 1: Surface mounted on 1 in
2
copper pad of FR4 board; 125
o
C/W when mounted on Min. copper pad.
Note 2: Pulse width limited by Max. junction temperature.
Note 3: Pulse width 300us, duty cycle 2%.
AF4835P
P-Channel Enhancement Mode Power MOSFET
Anachip Corp.
www.anachip.com.tw Rev. 1.2 Nov 19, 2004
3/6
Typical Performance Characteristics
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction
Temperature
Fig 5. Maximum Drain Current v.s. Case
Temperature
Fig 6. Typical Power Dissipation
AF4835P
P-Channel Enhancement Mode Power MOSFET
Anachip Corp.
www.anachip.com.tw Rev. 1.2 Nov 19, 2004
4/6
Typical Performance Characteristics (Continued)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristic of Reverse
Diode
Fig 12. Gate Threshold Voltage v.s. Junction
Temperature
AF4835P
P-Channel Enhancement Mode Power MOSFET
Anachip Corp.
www.anachip.com.tw Rev. 1.2 Nov 19, 2004
5/6
Typical Performance Characteristics (Continued)
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
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