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Datasheet: AF4811PSL (Anachip Corporation)

P-Channel 30-V (D-S) MOSFET

 

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Anachip Corporation
AF4811P
P-Channel 30-V (D-S) MOSFET

This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.0 Jul 16, 2004
1/3
Features

-Low r
DS(on)
Provides Higher Efficiency and Extends
Battery Life
-Miniature SO-8 Surface Mount Package Saves
Board Space
-High power and current handling capability
-Extended V
GS
range (25) for battery pack
applications

Product Summary
V
DS
(V)
r
DS(on)
(m)
I
D
(A)
30@V
GS
=-10V
9.5
-30
52@V
GS
=-4.5V
7.5


Pin Assignments
SOP-8
5
6
7
8
4
3
2
1
D
D
D
D
S
S
S
G
General Description

These miniature surface mount MOSFETs utilize
High Cell Density process. Low r
DS(on)
assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are PWM DC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.





Pin Descriptions

Pin Name
Description
S Source
G Gate
D Drain

Ordering information
A X 4811P X X X
PN
Package
Feature
F :MOSFET
S: SOP-8
Lead Free
Blank : Normal
L : Lead Free Package
Packing
Blank : Tube or Bulk
A : Tape & Reel
AF4811P
P-Channel 30-V (D-S) MOSFET
Anachip Corp.
www.anachip.com.tw Rev. 1.0 Jul 16, 2004
2/3
Absolute Maximum Ratings
(T
A
=25C unless otherwise noted)
Symbol
Parameter
Rating
Units
V
DS
Drain-Source
Voltage
-30
V
V
GS
Gate-Source
Voltage
25
V
T
A
=25C 9.5
I
D
Continuous
Drain
Current
(Note 1)
T
A
=70C 8.3
A
I
DM
Pulsed Drain Current
(Note 2)
50
A
I
S
Continuous Source Current (Diode Conduction)
(Note 1)
-2.1
A
T
A
=25C 3.1
P
D
Power
Dissipation
(Note 1)
T
A
=70C 2.6
W
T
J
, T
STG
Operating Junction and Storage Temperature Range
-55 to 150
C
Thermal Resistance Ratings
Symbol
Parameter
Maximum
Units
R
JC
Maximum
Junction-to-Case
(Note 1)
t
<
5 sec
25
C/W
R
JA
Maximum
Junction-to-Ambient
(Note 1)
t
<
10 sec
50
C/W
Note 1: surface Mounted on 1"x 1" FR4 Board.
Note 2:
Pulse width limited by maximum junction temperature
Specifications
(T
A
=25C unless otherwise noted)
Limits
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
(BR)DSS
Drain-Source breakdown Voltage
V
GS
=0V, I
D
=-250uA -30
- - V
V
GS(th)
Gate-Threshold
Voltage
V
DS
= V
GS
, I
D
=-250uA -1
-1.6
-3 V
I
GSS
Gate-Body
Leakage
V
DS
=0V, V
GS
=25V -
-
100
nA
V
DS
=-24V, V
GS
=0V -
-
-1
I
DSS
Zero Gate Voltage Drain Current
V
DS
=-24V, V
GS
=0V,
T
J
=55C
- - -5
uA
I
D(on)
On-State
Drain
Current
(Note 3)
V
DS
=-5V, V
GS
=-10V -50 - - A
V
GS
=-10V, I
D
=-9.5A -
24
30
V
GS
=-4.5V, I
D
=-7.5A -
44
52
r
DS(on)
Drain-Source
On-Resistance
(Note 3)
V
GS
=-10V, I
D
=-9.5A,
T
J
=55C
- 29 36
m
g
fs
Forward
Tranconductance
(Note 3)
V
GS
=-15V, I
D
=-9.5A -
31
-
S
V
SD
Diode Forward Voltage
I
S
=-2.1A, V
GS
=0V -
-0.7
-1.2
V
Dynamic
(Note 4)
Q
g
Total Gate Charge
-
15
26
Q
gs
Gate-Source
Charge
- 5.8 -
Q
gd
Gate-Drain
Charge
V
DS
=-15V, V
GS
=-10V,
I
D
=-9.5A
- 12 -
nC
Switching
t
d(on)
Turn-On Delay Time
-
15
26
t
r
Rise
Time
- 12 21
t
d(off)
Turn-Off Delay Time
-
62
108
t
f
Fall-Time
V
DD
=-15, R
L
=15,
ID=-1A, VGEN=-10V,
RG=6
- 46 71
nS
Note 3: Pulse test: PW < 300us duty cycle < 2%.
Note 4:
Guaranteed by design, not subject to production testing.
AF4811P
P-Channel 30-V (D-S) MOSFET
Anachip Corp.
www.anachip.com.tw Rev. 1.0 Jul 16, 2004
3/3
Marking Information
SOP-8L
( Top View )
1
8
4 8 1 1 P
AA Y W X
Year code:
Part Number
Lot code:
Week code:
Factory code
"A~Z": 01~26;
"A~Z": 27~52
"4" =2004
~
"A~Z": 01~26;
"A~Z": 27~52
"X": Non-Lead Free; "X": Lead Free
Logo
Package Information
Package Type: SOP-8L
VIEW "A"
L
C
VIEW "A"
H
E
A
A2
A1
B
e
D
7 (4X)
0.015x45
7 (4X)
y
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
Nom.
Max.
Min.
Nom.
Max.
A 1.40 1.60 1.75 0.055 0.063 0.069
A1
0.10 - 0.25
0.040 - 0.100
A2 1.30 1.45 1.50 0.051 0.057 0.059
B 0.33 0.41 0.51 0.013 0.016 0.020
C 0.19 0.20 0.25 0.0075
0.008
0.010
D 4.80 5.05 5.30 0.189 0.199 0.209
E 3.70 3.90 4.10 0.146 0.154 0.161
e - 1.27 - - 0.050 -
H 5.79 5.99 6.20 0.228 0.236 0.244
L 0.38 0.71 1.27 0.015 0.028 0.050
y - - 0.10 - - 0.004
0
O
- 8
O
0
O
- 8
O
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