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Datasheet: AF4512C (Anachip Corporation)

P & N-channel 30-v (d-s) Mosfet

 

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Anachip Corporation
AF4512C
P & N-Channel 30-V (D-S) MOSFET

This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.1 Jul 20, 2004
1/8
Features

-Low r
DS(on)
Provides Higher Efficiency and Extends
Battery Life
-Miniature SO-8 Surface Mount Package Saves
Board Space
-High power and current handling capability
-Low side high current DC-DC Converter
applications

Product Summary
V
DS
(V)
r
DS(on)
(m)
I
D
(A)
40@V
GS
=4.5V
6.0
30
28@V
GS
=10V
7.0
80@V
GS
=-4.5V
-4.0
-30
52@V
GS
=-10V
-5.2


Pin Assignments
SOP-8
5
6
7
8
4
3
2
1
D1
D1
D2
D2
S1
G1
S2
G2
General Description

These miniature surface mount MOSFETs utilize High
Cell Density process. Low r
DS(on)
assures minimal
power loss and conserves energy, making this device
ideal for use in power management circuitry. Typical
applications are PWMDC-DC converters, power
management in portable and battery-powered
products such as computers, printers, battery charger,
telecommunication power system, and telephones
power system.




Pin Descriptions
Pin Name
Description
S1 Source
(NMOS)
G1 Gate
(NMOS)
D1 Drain
(NMOS)
S2 Source
(PMOS)
G2 Gate
(PMOS)
D2 Drain
(PMOS)

Ordering information
A X 4512C X X X
PN
Package
Feature
F :MOSFET
S: SOP-8
Lead Free
Blank : Normal
L : Lead Free Package
Packing
Blank : Tube or Bulk
A : Tape & Reel
AF4512C
P & N-Channel 30-V (D-S) MOSFET
Anachip Corp.
www.anachip.com.tw Rev. 1.1 Jul 20, 2004
2/8
Absolute Maximum Ratings
(T
A
=25C unless otherwise noted)
Symbol
Parameter
N-Channel P-Channel
Units
V
DS
Drain-Source
Voltage
30
-30
V
GS
Gate-Source
Voltage
20
-20
V
T
A
=25C
7 -5.2
I
D
Continuous
Drain
Current
(Note 1)
T
A
=70C
5.6 -6.8
A
I
DM
Pulsed Drain Current
(Note 2)
20
-20
A
I
S
Continuous Source Current (Diode Conduction)
(Note 1)
1.3 -1.3 A
T
A
=25C
2.1 2.1
P
D
Power
Dissipation
(Note 1)
T
A
=70C
1.3 1.3
W
T
J
, T
STG
Operating Junction and Storage Temperature Range
-
-55 to 150
C
Thermal Resistance Ratings
Symbol
Parameter
Maximum
Units
R
JC
Maximum
Junction-to-Case
(Note 1)
t
<
5 sec
40
C/W
R
JA
Maximum
Junction-to-Ambient
(Note 1)
t
<
5 sec
60
C/W
Note 1: surface Mounted on 1"x 1" FR4 Board.
Note 2:
Pulse width limited by maximum junction temperature
Specifications
(T
A
=25C unless otherwise noted)
Limits
Symbol
Parameter
Test Conditions
Ch
Min.
Typ.
Max.
Unit
Static
V
GS
=0V, I
D
=250uA N 30 - -
V
(BR)DSS
Drain-Source breakdown Voltage
V
GS
=0V, I
D
=-250uA P -30 - -
V
V
DS
= V
GS
, I
D
=250uA N 1 1.95 3
V
GS(th)
Gate-Threshold
Voltage
V
DS
= V
GS
, I
D
=-250uA
P -1.0
-1.7 -3
V
V
GS
=20V, V
DS
=0V N - -
100
I
GSS
Gate-Body
Leakage
V
GS
=-20V, V
DS
=0V P - -
100
nA
V
DS
=24V, V
GS
=0V N - - 1
I
DSS
Zero Gate Voltage Drain Current
V
DS
=-24V, V
GS
=0V P - - -1
uA
V
DS
=5V, V
GS
=10V N
20 - -
I
D(on)
On-State
Drain
Current
(Note 3)
V
DS
=-5V, V
GS
=-10V P -20 - -
A
V
GS
=10V, I
D
=7A -
19
28
V
GS
=4.5V, I
D
=6A
N
- 24 40
V
GS
=-10V, I
D
=-5A -
42
52
r
DS(on)
Drain-Source On-Resistance
(Note 3)
V
GS
=-4.5V, I
D
=-4A
P
- 65 80
m
V
DS
=15V, I
D
=7A
N - 25 -
g
fs
Forward Tranconductance
(Note 3)
V
DS
=-15V, I
D
=-5A P - 10 -
S





AF4512C
P & N-Channel 30-V (D-S) MOSFET
Anachip Corp.
www.anachip.com.tw Rev. 1.1 Jul 20, 2004
3/8
Specifications
(T
A
=25C unless otherwise noted)
Limits
Symbol
Parameter
Test Conditions
Ch
Min.
Typ.
Max.
Unit
Dynamic
N -
10.7
26
Q
g
Total
Gate
Charge
P - 10
13
N - 1.7 -
Q
gs
Gate-Source
Charge
P - 2.2 -
N - 2.1 -
Q
gd
Gate-Drain
Charge
N-Channel
V
DS
=15V, V
GS
=10V
I
D
=7A
P-Channel
V
DS
=-15V, V
GS
=-10V
I
D
=-5A
P - 1.7 -
nC
Switching
N - 8 16
t
d(on)
Turn-On Delay Time
P - 7 14
N - 5 10
t
r
Rise
Time
P - 13
24
N - 23
37
t
d(off)
Turn-Off
Delay
Time
P - 14
25
N - 3 6
t
f
Fall-Time
N-Channel
V
DD
=15, V
GS
=10V
I
D
=1A, R
GEN
=6
P-Channel
V
DD
=-15, V
GS
=-10V
I
D
=-1A, R
GEN
=6
P 9 17
nS
Note 3: Pulse test: PW < 300us duty cycle < 2%.
Note 4:
Guaranteed by design, not subject to production testing.
AF4512C
P & N-Channel 30-V (D-S) MOSFET
Anachip Corp.
www.anachip.com.tw Rev. 1.1 Jul 20, 2004
4/8
Typical Performance Characteristics (N-Channel)
AF4512C
P & N-Channel 30-V (D-S) MOSFET
Anachip Corp.
www.anachip.com.tw Rev. 1.1 Jul 20, 2004
5/8
Typical Performance Characteristics (N-Channel) (Continued)
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