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Datasheet: ALD110902SA (Advanced Linear Devices)

QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD MATCHED PAIR MOSFET ARRAY

 

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Advanced Linear Devices
ALD110802/ALD110902
Advanced Linear Devices
2
Notes:
1
Consists of junction leakage currents
ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage,
V
DS
10.6V
Gate-Source voltage,
V
GS
10.6V
Power dissipation
500 mW
Operating temperature range PA, SA, PC, SC package
0
C to +70
C
Storage temperature range
-65
C to +150
C
Lead temperature, 10 seconds
+260
C
OPERATING ELECTRICAL CHARACTERISTICS
V+ = +5V (or open) V- = GND TA
= 25
C unless otherwise specified
CAUTION:
ESD Sensitive Device. Use static control procedures in ESD controlled environment.
Gate Threshold Voltage
VGS(th)
0.18
0.20
0.22
V
IDS =1
A
VDS = 0.1V
Offset Voltage
VOS
2
10
mV
VGS(th)1-VGS(th)2
Offset VoltageTempco
TC
VOS
5
V/
C
VDS1= VDS2
GateThreshold Voltage Tempco
TC
VGS(th)
-1.7
mV/
C
ID = 1
A
0.0
ID = 20
A, VDS = 0.1V
+1.6
ID = 40
A
On Drain Current
IDS (ON)
12.0
mA
VGS = + 9.7V
3.0
VGS = + 4.2V
VDS = + 5V
Forward Transconductance
GFS
1.4
mmho
VGS = +4.2V
VDS = + 9.2V
Transconductance Mismatch
GFS
1.8
%
Output Conductance
GOS
68
mho
VGS = +4.2V
VDS = +9.2V
Drain Source On Resistance
RDS (ON)
500
VDS = 0.1V
VGS = +4.2V
Drain Source On Resistance
RDS (ON)
0.5
%
Mismatch
Drain Source Breakdown
BVDSX
10
V
IDS = 1.0
A
Voltage
VGS = -0.8V
Drain Source Leakage Current
1
IDS (OFF)
10
100
pA
VGS = -0.8V
4
nA
VDS =10V, TA = 125
C
Gate Leakage Current
1
IGSS
3
30
pA
VDS = 0V VGS = 10V
1
nA
TA =125
C
Input Capacitance
CISS
2.5
pF
Transfer Reverse Capacitance
CRSS
0.1
pF
Turn-on Delay Time
ton
10
ns
V+ = 5V RL= 5K
Turn-off Delay Time
toff
10
ns
V+ = 5V RL= 5K
Crosstalk
60
dB
f = 100KHz
ALD110802 / ALD110902
Parameter
Symbol
Min
Typ
Max
Unit
Test Conditions
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